1030mhz
Abstract: 2TD12 HV400 SM200 1090mhz
Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed
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HVV1011-040
HVV1214-075
HVV1011-040
1030-1090MHz,
HVV1011-035
1030mhz
2TD12
HV400
SM200
1090mhz
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Y22 SOT23
Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor
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PMBTH10
PMBTH10
PMBTH81.
MSB003
Y22 SOT23
MSB003
g21 Transistor
B22 base
PMBTH81
transistor b11
switching transistor
y11 transistor
transistor G11
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PMBTH10
Abstract: MSB003 PMBTH81 MRA566
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES PINNING • Low cost
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PMBTH81
PMBTH81
PMBTH10.
MSB003
PMBTH10
MSB003
MRA566
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MBB400
Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation
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BF747
MSB003
MBB400
MSB003
BF747
transistor y21
y21 transistor
marking code 604 SOT23
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mbb400
Abstract: BF747 MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation
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BF747
MSB003
mbb400
BF747
MSB003
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70V AC to 48v dc 40 amp converter circuit diagram
Abstract: No abstract text available
Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode
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LT3781
350kHz
300kHz
LT3710
LTC3728
550kHz,
3781f
70V AC to 48v dc 40 amp converter circuit diagram
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GHM3045
Abstract: FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3
Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller U FEATURES DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode
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LT3781
350kHz
LTC1929
300kHz
LT3710
LTC3728
550kHz,
3781f
GHM3045
FZT690
ltc 3781
SI4450
optocoupler Iso1
BAS21
BAT54
LT3781
MMBD914LT1
MURS120T3
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ltc 3781
Abstract: 2kw mosfet half bridge converter 2kw planar transformer theory planar transformer theory P1976 LT 450 mbr 2kw power supply C3781 WE MIDCOM 0.25w resistor 1/4
Text: Final Electrical Specifications LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode
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LT3781
350kHz
LTC1922-1
LTC1929
300kHz
LTC3728
550kHz,
3781i
ltc 3781
2kw mosfet
half bridge converter 2kw
planar transformer theory
planar transformer theory P1976
LT 450 mbr
2kw power supply
C3781
WE MIDCOM
0.25w resistor 1/4
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BF547
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF
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BF547
MSB003
BF547
MSB003
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B12 IC marking code
Abstract: BF547 MSB003 Y22 SOT23 transistor y21
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF
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BF547
MSB003
B12 IC marking code
BF547
MSB003
Y22 SOT23
transistor y21
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm
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PA1710A
PA1710AG
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm
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PA1710A
PA1710AG
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XC6SLX16-CSG324
Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller
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DS695
CH-7301
XC6SLX16-CSG324
ch7301 DVI VHDL
DVI VHDL
xilinx ch7301
CHRONTEL 7301 Xilinx
XPS Thin Film Transistor(TFT) Controller
TFT controller
XC4VLX25-FF668-10
a/ch7301 DVI VHDL
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BF747
Abstract: MBB400 sot23-4 marking a1
Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.
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BF747
BF747
MBB400
sot23-4 marking a1
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PSH10
Abstract: MPSH10 datasheet MPSH10 MPSH81
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification
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M3D186
MPSH10
MSB033
MPSH81.
PSH10.
SCA60
125104/00/04/pp8
PSH10
MPSH10 datasheet
MPSH10
MPSH81
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z144
Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the
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CA3127
CA3127
500MHz.
z144
1021-P1
cascode transistor array
HP342A
CA3127E
CA3127M
CA3127M96
zener Diode B22
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Untitled
Abstract: No abstract text available
Text: LT1681 Dual Transistor Synchronous Forward Controller DESCRIPTIO FEATURES U High Voltage: Operation Up to 72V Synchronizable Operating Frequency and Output Switch Phase for Multiple Controller Systems Fixed Frequency Operation to 350kHz Adaptive and Adjustable Blanking
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LT1681
350kHz
TC3714
LTC3716
1681f
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planar transformer theory P1976
Abstract: planar transformer theory GHM3045X7R222K-GC 2kw boost 2-phase 2kw mosfet DO1608C-472 LT1681 MURS120T3 SUD40N10-25 VP5-1200
Text: LT1681 Dual Transistor Synchronous Forward Controller DESCRIPTIO U FEATURES High Voltage: Operation Up to 72V Synchronizable Operating Frequency and Output Switch Phase for Multiple Controller Systems Fixed Frequency Operation to 350kHz Adaptive and Adjustable Blanking
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LT1681
350kHz
LTC3714
LTC3716
1681f
planar transformer theory P1976
planar transformer theory
GHM3045X7R222K-GC
2kw boost 2-phase
2kw mosfet
DO1608C-472
LT1681
MURS120T3
SUD40N10-25
VP5-1200
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3408 diode
Abstract: LTC3408EDD CDRH2D11 CMD4D06 JMK212BJ106MN JMK212BJ475MG LQH32CN4R7M11 LTC3408
Text: LTC3408 1.5MHz, 600mA Synchronous Step-Down Regulator with Bypass Transistor U FEATURES DESCRIPTIO • The LTC 3408 is a high efficiency monolithic synchronous buck regulator optimized for WCDMA power amplifier applications. The output voltage can be dynamically
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LTC3408
600mA
600mA
300MHz
LTC5505-1:
28dBm
18dBm,
LTC5505-2:
32dBm
12dBm,
3408 diode
LTC3408EDD
CDRH2D11
CMD4D06
JMK212BJ106MN
JMK212BJ475MG
LQH32CN4R7M11
LTC3408
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CA3246M
Abstract: CA3246 CA3246M96 850e 610E CA3227 CA3227E CA3227M CA3227M96 SPICE 2G6
Text: CA3227, CA3246 Data Sheet High-Frequency NPN Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz September 1998 File Number 1345.4 Features • Gain-Bandwidth Product fT . . . . . . . . . . . . . . . . . >3GHz • Five Transistors on a Common Substrate
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CA3227,
CA3246
CA3227
CA3246
CA3246M
CA3246M96
850e
610E
CA3227E
CA3227M
CA3227M96
SPICE 2G6
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AF239
Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.
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A23Sb05
AF239
Q60106-X239
T1-0221)
transistor h5c
AF 239
0406H
F239
Q60106-X239
WTV4
AAO-4A
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AFY16
Abstract: Germanium Transistor 71lb 21b22
Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.
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AFY16
AFY16
18A4DIN41876
Q60106
f-200
Germanium Transistor
71lb
21b22
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGAC30U
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IRGMVC50UD
Abstract: No abstract text available
Text: International Ek ]Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz Switching-loss rating includes
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IRGMVC50U
20kHz
IRGMVC50UD
IRGMVC50UU
O-258
4ASS452
MIL-S-19500
IRGMVC50UD
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