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    TRANSISTOR FS 22 SM 10 Search Results

    TRANSISTOR FS 22 SM 10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FS 22 SM 10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor FS 22 SM

    Abstract: tdk capacitors C0805 transistor FS 20 SM transistor FS 18 SM
    Text: SC2453 High Performance Quad Output Switching Regulator POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ Two synchronized converters for low noise Power up sequencing to prevent latch-up Out of phase operation for low input ripple Over current protection


    Original     		PDF SC2453 transistor FS 22 SM tdk capacitors C0805 transistor FS 20 SM transistor FS 18 SM

    buz101s

    Abstract: 101S E3045 Q67040-S4013-A2
    Text: BUZ 101S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 0.05 Ω 22 A • dv/dt rated • 175 ˚C operating temperature


    Original     		PDF BUZ101S P-TO263-3-2 Q67040-S4013-A6 BUZ101S E3045 P-TO220-3-1 Q67040-S4013-A2 E3045A 101S E3045

    103S

    Abstract: BUZ103S E3045 Q67040-S4009-A2
    Text: BUZ 103S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.036 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 31 A • dv/dt rated • 175 ˚C operating temperature


    Original     		PDF BUZ103S P-TO263-3-2 Q67040-S4009-A6 BUZ103S E3045 P-TO220-3-1 Q67040-S4009-A2 E3045A 103S E3045

    THS4041

    Abstract: THS5651 THS5651IDW THS5651IPW wireless communication
    Text: THS5651 10-BIT, 100 MSPS, CommsDAC DIGITAL-TO-ANALOG CONVERTER SLAS197A – JUNE 1999 D D D D D D D D D D D Member of the Pin-Compatible CommsDAC Product Family 100 MSPS Update Rate 10-Bit Resolution Superior Spurious Free Dynamic Range Performance SFDR to Nyquist at 20 MHz


    Original     		PDF THS5651 10-BIT, SLAS197A 10-Bit 28-Pin THS4041 THS5651 THS5651IDW THS5651IPW wireless communication

    BUZ104SL

    Abstract: E3045 Q67040-S4006-A2
    Text: BUZ 104SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.064 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 12.5 A • Logic Level • dv/dt rated


    Original     		PDF 104SL BUZ104SL P-TO263-3-2 Q67040-S4006-A6 BUZ104SL E3045 P-TO220-3-1 Q67040-S4006-A2 E3045A E3045

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    THS4001

    Abstract: THS4011 THS4041 THS5641 THS5641IDW THS5641IPW
    Text: THS5641 8-BIT, 100 MSPS, CommsDAC DIGITAL-TO-ANALOG CONVERTER SLAS199A – MAY 1999 REVISED JUNE 1999 D D D D D D D D D D D D D D D Member of the Pin-Compatible CommsDAC Product Family 100 MSPS Update Rate 8-Bit Resolution Signal-to-Noise and Distortion Ratio


    Original     		PDF THS5641 SLAS199A 28-Pin THS4001 THS4011 THS4041 THS5641 THS5641IDW THS5641IPW

    transistor r4c

    Abstract: No abstract text available
    Text: THS5641 8-BIT, 100 MSPS, CommsDAC DIGITAL-TO-ANALOG CONVERTER SLAS199A – MAY 1999 REVISED JUNE 1999 D D D D D D D D D D D D D D D SOIC DW OR TSSOP (PW) PACKAGE (TOP VIEW) Member of the Pin-Compatible CommsDAC Product Family 100 MSPS Update Rate 8-Bit Resolution


    Original     		PDF THS5641 SLAS199A 28-Pin transistor r4c

    THS4041

    Abstract: THS5651A THS5651AIDW THS5651AIPW
    Text: THS5651A 10-BIT, 125 MSPS, CommsDAC DIGITAL-TO-ANALOG CONVERTER SLAS260 – FEBRUARY 2000 D D D D D D D D D D D Member of the Pin-Compatible CommsDAC Product Family 125 MSPS Update Rate 10-Bit Resolution Superior Spurious Free Dynamic Range Performance SFDR to Nyquist at 40 MHz


    Original     		PDF THS5651A 10-BIT, SLAS260 10-Bit 28-Pin THS4041 THS5651A THS5651AIDW THS5651AIPW

    BUZ104S

    Abstract: 104S E3045 Q67040-S4007-A2 12J8
    Text: BUZ 104S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 55 V RDS on 0.08 Ω ID 13.5 A • dv/dt rated • 175 ˚C operating temperature


    Original     		PDF BUZ104S P-TO263-3-2 Q67040-S4007-A6 BUZ104S E3045 P-TO220-3-1 Q67040-S4007-A2 E3045A 104S E3045 12J8

    buz102s

    Abstract: 102S E3045 Q67040-S4011-A2 9070C FID60
    Text: BUZ 102S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 52 A • dv/dt rated • 175 ˚C operating temperature


    Original     		PDF BUZ102S P-TO220-3-1 Q67040-S4011-A2 P-TO263-3-2 Q67040-S4011-A6 Q67040-S4011-A5 BUZ102S E3045 102S E3045 Q67040-S4011-A2 9070C FID60

    Q67040-S4008-A2

    Abstract: BUZ103SL E3045 Q67040-S4008-A6 Q67040-S4008-A5
    Text: BUZ 103SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated


    Original     		PDF 103SL BUZ103SL P-TO263-3-2 Q67040-S4008-A6 BUZ103SL E3045 P-TO220-3-1 Q67040-S4008-A2 E3045A E3045 Q67040-S4008-A5

    transistor k117

    Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
    Text: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100


    OCR Scan     		PDF 2SC2458 2SC2459 2SC2710 2SC3267 2SC3378 2SC3488 75393P 75393S 75393F transistor k117 transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor

    KD 271

    Abstract: No abstract text available
    Text: SIEMENS 10266 SIPMOS Power Transistor BUZ 271 • P channel • Enhancement mode • Avalanche rated Type BUZ 271 v DS -5 0 V -2 2 A • ^ d s on Package 1> Ordering Code 0.15 Q TO-220 AB C67078-S1453-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 26 ’C


    OCR Scan     		PDF O-220 C67078-S1453-A2 SIL03515 KD 271

    D 4206 TRANSISTOR

    Abstract: 2N7075
    Text: fnrsiüconix J IÆ 2N7075 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -254A A Herm etic Package TOP VIEW PRODUCT SUMMARY V BR DSS (V) rDS(ON) (il) (A) >D 100 0.065 30 2 3 SOURCE GATE Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7075 -254A 10peration D 4206 TRANSISTOR 2N7075

    RC5201G

    Abstract: WSL2512R018
    Text: F A IR C H IL D w w w .fa irc h ild s e m i.c o m s e m i c o n d u c t o r tm RC5201 Chemistry Independent Intelligent Battery C harger Features Applications • Notebooks’fast chargers • PDAs • Hand-held portable instruments Description An innovative power control loop allows operation from line


    OCR Scan     		PDF RC5201 RC5201G WSL2512R018

    es2818p

    Abstract: 671-8039 OMRON CPU OCH CP Clare DSS41A05 es2818 es56 ES2819 ess modem es2898 es2816
    Text: ES56-PI Series 56K / V.90 PCI Modem Solutions Data Sheet p r e lim in a r y < ESS Technology, Inc. DESCRIPTION MODEM FEATURES The ES56-PI chipset series is a highly integrated solution which brings advanced modem functionality to PCI-based notebook and desktop systems. The ES56-PI from ESS


    OCR Scan     		PDF ES56-PI 42bis/MNP 27ter, ES2818P ES2816P ES2818F ES2819F es2818p 671-8039 OMRON CPU OCH CP Clare DSS41A05 es2818 es56 ES2819 ess modem es2898 es2816

    ma 3810

    Abstract: DYMEC 3810 10-TURN 200S Digital Weighing Scale block 203 trim pot
    Text: MODELS 3810, 3811, 3812, 3830, 3831, 3832 A Subsidiary of SILICON TRANSISTOR CORP. 10 MHz Voltage-to-Frequency Frequency-to-Voltage Converter Family Description The 3810 and 3830 Fam ilies are high perform ance, precision 10 MHz fu ll scale Voltage-to-Frequency Con­


    OCR Scan     		PDF

    dv4 smd transistor

    Abstract: power TRANSISTOR BL p55 SMD transistor SMD p95 transistor SMD p81 transistor smd p4d transistor SMD p90 transistor bl p75 smd Transistor Equivalent TT 2142 smd transistor P63 transistor P7d
    Text: TOSHIBA TMP86CS43 CM OS 8-Bit M icrocontroller TMP86CS43F The TM P86CS43F is the high-speed, high-performance and low power consumption 8-bit microcomputer, including large-capacity RO M , RA M , multi-function timer/counter, serial bus interface SIO , U A R T , 10-bit


    OCR Scan     		PDF TMP86CS43 TMP86CS43F P86CS43F 10-bit TMP86CS43F P-QFP80-1420-0 TMP86PS43F TLCS-870/C 16-bit 86CS43-161 dv4 smd transistor power TRANSISTOR BL p55 SMD transistor SMD p95 transistor SMD p81 transistor smd p4d transistor SMD p90 transistor bl p75 smd Transistor Equivalent TT 2142 smd transistor P63 transistor P7d

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B

    2N5397 Texas

    Abstract: No abstract text available
    Text: TYPE 2N5397 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 1 1 1 4 2 4 , A U G U S T 1971 FO R V H F A M P L IF IE R A N D M IX E R A P P L IC A T IO N S • High Power Gain . . . 15 dB Min at 450 MHz • Low Noise Figure . . . 3.5 dB Max at 450 MHz


    OCR Scan     		PDF 2N5397 2N5397 Texas

    SMD TRANSISTOR MARKING 9f

    Abstract: H7 marking code smd BUZ101SL E3045 Q67040-S4012-A2 004II
    Text: BUZ 101SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ DS on Continuous drain current b • Avalanche rated ^DS 55 V 0.04 ii 20 A • Logic Level


    OCR Scan     		PDF BUZ101SL_ P-TQ220-3-1 Q67040-S4012-A2 BUZ101SL E3045A P-TQ263-3-2 Q67040-S4012-A6 E3045 P-T0263-3-2 SMD TRANSISTOR MARKING 9f H7 marking code smd 004II

    Untitled

    Abstract: No abstract text available
    Text: HI5746 Semiconductor Data Sheet October 1998 File Number 4129.3 10-Bit, 40 MSPS A/D Converter Features T he H I57 46 is a m onolithic, 10-bit, an alog-to-d ig ital • S am p lin g R a t e . 40 M SPS


    OCR Scan     		PDF HI5746 10-Bit,

    FST 460 transistor

    Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
    Text: O K I Semiconductor ISM6258/MSM6258V ADPCM S P E E C H P R O C E S S O R FO R SO LID ST A T E R E C O R D E R TO C U S T O M ER S FO R NEW C IR C U IT DESIGN For a new circuit design, it is recommended to use not the M SM 6258, but the M SM 6388/ M SM 6588 as described later.


    OCR Scan     		PDF ISM6258/MSM6258V 6388/M 12-bit MSM6258 MSM6588. 7542M0 MSM6258/MSM6258V MSM80C85 b7E4240 FST 460 transistor 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460