Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR F13 Search Results

    TRANSISTOR F13 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    transistor f613

    Abstract: transistor bc 567
    Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.


    Original     		PDF AO4604 AO4604 AO4604L -AO4604L 16789ABA2CDE9AFDC transistor f613 transistor bc 567

    bly89a

    Abstract: Transistor bly89a
    Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		PDF Q01414fl BLY89A 7Z675I bly89a Transistor bly89a

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX92A QQ14D5

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SC2223 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M INI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2223 is designed fo r use in small type equipments especially recom­ in m illim eters mended for Hybrid Integrated C ircuit and other applications.


    OCR Scan     		PDF 2SC2223 2SC2223

    BT816

    Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
    Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages


    OCR Scan     		PDF -335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718

    transistor b722

    Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EET NEC j/ SILICON TRANSISTOR 2 S C 2223 ELECTRON DEVICE HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION P ACKAG E DIMENSIONS The 2SC2223 is designed fo r use it smalt ty p e equipm ents especially recom- in m illim e te rs


    OCR Scan     		PDF 2SC2223 2SC2223

    r2c transistor

    Abstract: 20190
    Text: ERICSSON ^ PTB 20190 175 Watts, 470-806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, com mon em itter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically


    OCR Scan     		PDF G-200, r2c transistor 20190

    transistor d 1557

    Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
    Text: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly


    OCR Scan     		PDF fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S

    B861 transistor

    Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
    Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR

    transistor F13

    Abstract: No abstract text available
    Text: DTB143EK Digital transistor, PNP, with 2 resistors Features • available in SMT3 SMT, SC-59 package Dimensions (Units : mm) DTB143EK (SMT3) • package marking: DTB143EK; F13 • a built-in bias resistor allows inverter circuit configuration without external


    OCR Scan     		PDF DTB143EK SC-59) DTB143EK; DTB143EK transistor F13

    Untitled

    Abstract: No abstract text available
    Text: P h ilip s S e m ic o n d u c to rs-S ig n e llc s F A S T T T L L o g ic S e rie s SECTION 3 Circuit Characteristics INPUT STRUCTURES There are three types of input structures used in FAST circuits: diffusion diode, PNP vertical transistor, and NPN transistor. Each of these


    OCR Scan     		PDF F3037 F3040 F30244 F30245 F30640

    11744 502

    Abstract: No abstract text available
    Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz REs Q62702-F1378 1 =C 2=E 3=B Package


    OCR Scan     		PDF 900MHz Q62702-F1378 OT-143 11744 502

    IC 1296

    Abstract: K 193 transistor sot marking code ZS BFQ193
    Text: SIEMENS BFQ193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz Marking Ordering Code Pin Configuration BFQ 193 RCs 1=B 2=C CO II Q62702-F1312 Package m


    OCR Scan     		PDF BFQ193 Q62702-F1312 OT-89 IS21el2 IC 1296 K 193 transistor sot marking code ZS BFQ193

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1316 OT-23 BFR183 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS B FP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5 GHz at collector currents from 20mA to 80mA RKs Q62702-F1347 1 =C 2=E LU II ''•cfr BFP 194 CO II 03 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF OT-143 Q62702-F1347 900MHz IS211

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1314 OT-23 BFR181

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.


    OCR Scan     		PDF BUK201-50Y

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SC4178 HIGH FREQUENCY AMPLIFIER IMPIM SILICON EPITAXIALTRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC4178 is designed fo r use in small type equipments especially recom­ in millimeters mended for Hybrid Integrated Circuit and other applications.


    OCR Scan     		PDF 2SC4178 2SC4178

    transistor F13

    Abstract: F12 MARKING 2SC4178 marking f13
    Text: DATA SHEET SILICON TRANSISTOR BJECTRONOEVfCE 2SC4178 HIGH FREQUENCY AMPLIFIER IMPN SILICON EPITAXIALTRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The2S C 4178 is designed for use in small type equipments especially recom­ in millimeters mended for Hybrid Integrated Circuit and other applications.


    OCR Scan     		PDF 2SC4178 The2SC4178 1987M transistor F13 F12 MARKING 2SC4178 marking f13