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    TRANSISTOR ET 460 Search Results

    TRANSISTOR ET 460 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ET 460 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor et 454

    Abstract: SK 50 et 12 transistor et 460 sk7650 SK129-25 leistungstransistoren ON SEMICONDUCTEUR A102A STS SOT SK454
    Text: A Strangkühlkörper für Leiterplattenmontage Extruded heatsinks for PCB mounting Dissipateurs extrudés pour montage PCB 34,9 16 12,7 1,5 3,2 6,5 18,3 P 25,4 E Ø 2,3 max. …STC 6,5 1,5 6 max. 3 4,5 max. 10,8 25,4 Ø7 M3 Ø6 Ø 2,3 max. …STIC …STCB


    Original     		PDF

    Heatsinks sk 489

    Abstract: sk514 sot823 transistor et 460 SK104a THF 104 THF 185 boitier to 126 SOT TO-126 mounting AT20N
    Text: A Retaining springs for transistors Lochbild 4 6,3 11,7 14 Perforations 10 THF 129 TO 220 4 für Kühlkörper für Blechstärke pour épaisseur de tôle 1 – 2 mm FS SK 129 A 105/106 1 – 2 mm FS SK 104 A 97/98 1 – 2 mm FS TO 3 P SK 409 A 99/100 TO 247


    Original     		PDF

    FX2N 64mr manual

    Abstract: FX2N-48MT FX2N-128MR mitsubishi plc FX2n-32mt SERIES FX2N-64MT fx2n-48mr FX2N-1PG MANUAL Mitsubishi MELSEC FX2N-80MR FX2N-80MT Mitsubishi MELSEC FX2N-80MR-DS
    Text: HARDWARE MANUAL FX2N SERIES PROGRAMMABLE CONTROLLERS FX2N Series Programmable Controllers ENG Foreword • • • FRE Préface • • • GER • • Dieses Handbuch enthält Texte, Abbildungen und Erläuterungen zur korrekten Installation und Bedienung der FX2N-SPS und sollte vor einer Installation oder einem Einsatz des Gerätes gelesen werden. Die Inhalte müssen verstanden sein.


    Original     		PDF JY992D66301H J24532 FX2N 64mr manual FX2N-48MT FX2N-128MR mitsubishi plc FX2n-32mt SERIES FX2N-64MT fx2n-48mr FX2N-1PG MANUAL Mitsubishi MELSEC FX2N-80MR FX2N-80MT Mitsubishi MELSEC FX2N-80MR-DS

    F3S-A482

    Abstract: omron f3sa F3S-A321 F3S-A322 emetteur 93420 F3S-A242 F3S-A082 F3S-A162 BB97
    Text: BARRIERE IMMATERIELLE F3S-A II Le plus haut niveau de sécurité pour la détection des doigts et mains des opérateurs en zones dangereuses Conforme aux directives européennes. Convient aux machines les plus dangereuses catégorie de sécurité type 4, conforme EN 61496-1,-2 prEN 50100-1,-2 ,


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    photo transistor array

    Abstract: ET7272 Optolab ET7272 ET8001
    Text: ET 8001 6-Channel precision amplifier with automatic hysteresis tracking function for encoders Features • Designed for optical encoders and light barriers • Automatic Hysteresis monitoring and tracking function generates precise digital outputs • Phase stable outputs over a wide


    Original     		PDF ET8001 550mV 450mV photo transistor array ET7272 Optolab ET7272

    brochage des circuits integres

    Abstract: hacheur photocoupleur relais schema Commande moteur Relais CPV240 radiateurs pour thyristors de puissance CX240D5 D1D20 crydom hd4850
    Text: L’EXPERT MONDIAL EN MATIÈRE DE COMMUTATION STATIQUE Relais statiques montés sur circuit imprimé Relais statiques montés sur panneau Relais statiques montés sur rail DIN Modules auxiliaires Modules d'Entrées/Sorties statiques Relais statiques t Modules auxiliaires t Modules E/S


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    GS 069 LF

    Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
    Text: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK637-500A BUK637-500B BUK637-500C BUK637 -500A -500B -500C T-39-15 GS 069 LF HCA-120

    BCX71GR

    Abstract: BCX71JR h22e H21E BCX71KR
    Text: PLESSEY SEMICOND/DISCRETE : OB D eT | 7250533 OOObbMb T f PIMP silicon planar small signal transistor BCX71 ABSOLUTE MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Emitter Voltage Symbol Emitter-Base Voltage BCX71 V CES V V CEO -45 V V ebo -5


    OCR Scan     		PDF BCX71 BCX71 BCX71GR BCX71JR h22e H21E BCX71KR

    bcy580

    Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
    Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation


    OCR Scan     		PDF BCY59 lB2ai10mA bcy580 BCY590 transistor h21e SCHEMA BCY59 BCY 59

    NE32584C-T1

    Abstract: nec 3435 transistor am 4428
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.


    OCR Scan     		PDF NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428

    TRANSISTOR sd 346

    Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
    Text: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen


    OCR Scan     		PDF untersc0037 TRANSISTOR sd 346 Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650

    Untitled

    Abstract: No abstract text available
    Text: BCX70J NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T„=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCX70J OT-23

    golf cart motor circuits

    Abstract: 2SC3866 transistor 2SD921 2sc3866 equivalent 2SC3866 sewing motor ET382 2SC3030 2SC3505 2SC3549
    Text: M O LD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High v o lta g e high speed sw itch in g transistors • T h e transistor is best suited fo r use w ith 240V AC inp u t sw itching regulators. • Can o p e rate w ith in th e 30kHz range ty p e


    OCR Scan     		PDF 30kHz 2SC3505 O-220F17 2SD2047 2SC3866 2SC3549 O-220AB 2SD1158 golf cart motor circuits 2SC3866 transistor 2SD921 2sc3866 equivalent sewing motor ET382 2SC3030

    2SC4538 equivalent

    Abstract: 2sc3866 equivalent 2SC3030 2SC3505 2SC3549 2SC3866 2SC4419 2SC4538 2SD2431 2SD1049
    Text: M O LD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High v o lta g e high speed sw itch in g transistors • T h e transistor is best suited fo r use w ith 240V AC inp u t sw itching regulators. • Can o p e rate w ith in th e 30kHz range ty p e


    OCR Scan     		PDF 30kHz 2SC3505 O-220F17 2SD2047 2SC3866 2SC3549 O-220AB 2SD1158 2SC4538 equivalent 2sc3866 equivalent 2SC3030 2SC4419 2SC4538 2SD2431 2SD1049

    Untitled

    Abstract: No abstract text available
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date: 22rid/Nov. '01 i MITSUBISHI RF POWER MODULE - RA45H4452M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 440~520MHz 45W MOBILE RADIO OUTLINE DRAWING MAXIMUM RATINGS SYMBOL V dd


    OCR Scan     		PDF 22rid RA45H4452M 520MHz 25deg 50ohm 440-520MHz ZI-50ohm

    Untitled

    Abstract: No abstract text available
    Text: 3 M A E «? H M - 6 5 6 4 2 /8 8 3 8K x 8 Asynchronous CMOS Static RAM August 1996 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65642/883 is a CMOS 8192 x 8-bit Static Random


    OCR Scan     		PDF MIL-STD883 HM-65642/883 80C86 80C88 43D2271 HM-65642/883

    LC marking code transistor

    Abstract: transistor marking code BCW61A BCW61 BCW61B BCW61C BCW61D TRANSISTOR BCW61 marking code ER transistor
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		PDF BCW61A/B/C/D KS5086 OT-23 BCW61B BCW61C BCW61 -50mA, -10mA, LC marking code transistor transistor marking code BCW61A BCW61D TRANSISTOR BCW61 marking code ER transistor

    TP6N60

    Abstract: 6N60
    Text: *57 SGS-THOMSON iL iO M K I M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 V dss R DS on Id 600 V < 1.2 a 6.8 A . TYPICAL RDs(on) = 1 f i • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF TP6N60 TP6N60 6N60

    transistor mark BA

    Abstract: No abstract text available
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol


    OCR Scan     		PDF BCW61A/B/C/D MMBT5086 BCW61 BCW61C BCW61D BCW61B transistor mark BA

    1736d

    Abstract: No abstract text available
    Text: 6DI75M-050 75A 'U ± '< h - y < 7 _ Y = 7 > '> ^ ^ ì>d. - ì V l £ f ' :£ ï > d , - ) v O utline Draw ings POWER TRANSISTOR MODULE F e a tu r e s • f f ih FE H igh DC C u rre n t Gain • H ig h S peed S w itc h in g : A p p lic a tio n s • ? G eneral P urpose Inverter


    OCR Scan     		PDF 6DI75M-050 e9Ti30S3 1736d

    QM300HA-2H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H lc V cex Collector current. Collector-emitter voltage. DC current gain . hre Insulated Type UL Recognized 30QA j 1000V 75 Yellow Card No. E80276 <N


    OCR Scan     		PDF QM300HA-2H E80276 E80271 rQrr10' QM300HA-2H

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


    OCR Scan     		PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361

    DIODE ED

    Abstract: HFA15T860 HFA15TB60 DIODE ITT 310 an967 ULTRA-FAST RECOVERY RECTIFIER DIODES NEGATIVE calculation of IGBT snubber Calculation of major IGBT operating parameters AN-967 AN-983
    Text: International S 3 Rectifier yIPPLICMION NOTES ' p u b l is h e d b y 'I n t e r n a t i o n a l r e c t i f i e r , 233 kan sa s st r e e t , el seg u n d o , ca 90245. 3 10 13 2 2 - 3 3 3 1 A N -9 8 9 The HEXFRED Ultrafast Diode in Power Switching Circuits


    OCR Scan     		PDF AN-989 0492-M10 322433t, DIODE ED HFA15T860 HFA15TB60 DIODE ITT 310 an967 ULTRA-FAST RECOVERY RECTIFIER DIODES NEGATIVE calculation of IGBT snubber Calculation of major IGBT operating parameters AN-967 AN-983