ic 556
Abstract: transistor SMD bcw66h BCW66F BCW66G BCW66H for ic 556 marking cd 556 SMD TRANSISTOR MARKING bw
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS
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OT-23
BCW66F,
BCW66G
BCW66H
C-120
ic 556
transistor SMD bcw66h
BCW66F
BCW66G
BCW66H
for ic 556
marking cd 556
SMD TRANSISTOR MARKING bw
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BCW66FR
Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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BCW66F
BCW66G
BCW66H
BCW66FR
BCW66GR
BCW66HR
BCW66
BCW68
100mA,
BCW66FR
BCW66HR
vce 1v
BCW66
BCW66F
BCW66G
BCW66GR
BCW66H
BCW68
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS
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Original
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OT-23
BCW66F,
BCW66G
BCW66H
C-120
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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BCW66F
BCW66G
BCW66H
BCW66FR
BCW66GR
BCW66HR
BCW66
BCW68
100mA,
500mA,
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bcw66fr
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68
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BCW66H
BCW66F
BCW66G
BCW66FR
BCW66GR
BCW66HR
BCW66
BCW68
bcw66fr
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CPM2C
Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
Text: Micro Programmable Controller CPM2C Omron’s powerful CPM2C micro controller redefines the traditional micro PLC. The CPM2C’s 33 mm width allows it to fit into small spaces, offers 119 instructions, and has processing speeds rivaling many ‘small’ PLCs.
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RS-232C/Peripheral
R301-E3-01
CPM2C
CPM2C-24EDT
200T1
CPM2C-CIF01-V1
A106 Micro Capacitor
CPM2c-32EDT
3G3HV manual
CQM1-CIF11
inverter omron 3G3HV
transistor pnp a110
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Untitled
Abstract: No abstract text available
Text: Bulletin No. CM-F Drawing No. LP0100 Released 11/02 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion-controls.com CONVERTER MODULES ADAPTS MANY RED LION CONTROLS’ COUNTERS AND ACCESSORIES TO A WIDE RANGE OF SIGNAL SOURCES VCM - VOLTAGE CONVERTER MODULES
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LP0100
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Untitled
Abstract: No abstract text available
Text: RN 5 RF SERI ES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of
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EA-043-111116
Room403,
Room109,
10F-1,
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PDF
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Untitled
Abstract: No abstract text available
Text: RN5RF SERIES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of
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EA-043-111116
Room403,
Room109,
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TDA3654
Abstract: TDA3654Q TDA3654 equivalent TDA2579 vertical deflection and guard circuit metal detector coils
Text: INTEGRATED CIRCUITS DATA SHEET TDA3654 TDA3654Q Vertical deflection and guard circuit 110˚ Product specification File under Integrated Circuits, IC02 March 1991 Philips Semiconductors Product specification Vertical deflection and guard circuit (110˚) TDA3654
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TDA3654
TDA3654Q
TDA3654
TDA3654Q
TDA3654 equivalent
TDA2579
vertical deflection and guard circuit
metal detector coils
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Untitled
Abstract: No abstract text available
Text: BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1- ° 2_ "
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OCR Scan
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BCW66F,
BCW66G
BCW66H
BCW66F
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PDF
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Untitled
Abstract: No abstract text available
Text: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 • COLLECTOR
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BCW66F,
BCW66G
BCW66H
180put
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BCW66H
Abstract: BCW66F BCW66G
Text: 23033=14 0ÜQ0 7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0 2.8 0.14 0.09 0.48 0.38 Pin configuration _L § 3 0.70 0.50
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OCR Scan
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Q07b5
BCW66F,
BCW66G
BCW66H
BCW66F
E3833C1M
00007b3
BCW66H
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Untitled
Abstract: No abstract text available
Text: 23333=14 000G7b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAG E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2.8 0.14 0.09 0.48 0.38 3 L 0.70 0.50 § 2.6 Pin configuration
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OCR Scan
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000G7b5
BCW66F,
BCW66G
BCW66H
00007L
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4527 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE <;r d i M T * j V 7 « Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON BASE TV TUNER, UHF CONVERTER APPLICATIONS. (COMMON BASE) • Transition Freauencv is Hi eh and Dependent. on Current
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2SC4527
2SC4246.
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max7575
Abstract: BCW66F BCW66G BCW66H
Text: BCW66F, BCW66G BCW66H COIL GENERAL PURPOSE TRANSISTOR N -P -N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m J3.0 2 .8 * 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER
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BCW66F,
BCW66G
BCW66H
BCW66F
max7575
BCW66F
BCW66H
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PDF
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR FC112 CORP SEE D 7 eH 7 0 7 b 0 0 0 7 3 0 2 1 T -3 S -II # N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications 3080 with Bias Resistances R1=22kQ, R2=22kO F ea tu res On-chip bias resistors (Ri = 22kQ,R2= 22kfl)
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FC112
22kfl)
FC112
2SC3396,
4139MO
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BA6125
Abstract: ba612
Text: BA612 BA612 5 eh ^ 5-Channel Large-Current Driver B A 612«, * f ; l F 7 ' f A l C f 1 X M & f k t i Z $ - ' > h > h 7 > y ^ 5 ' 7 H ' 5 HISS A U T ' f 0 D IP 1 4 p in T A T t 'if o The BA612 is a monolithic IC consisting of an array of 5 Darlington configured transistor pairs which have built-in
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BA612
BA612
14-pin
400mA)
BA6125
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ku 606
Abstract: KT808AM transistor d 808 transistor kt transistor 805A 2110-B1 KT 805 RFT Transistoren KT808 2107B-2
Text: SERVICE-M ITTEILUNGEN VEB IN D U S T R IE V E R T R IE 8 R U N D F U N K U N D F E R N S EH EN ra d io -television AUSGABE: SEITE 1-4 DATUM: 3.84 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / SI E I H B A U A N L E I T Ü H G für den äquivalenten ?DE-Steckbaustein mit Transistor, der die Rohre 6 Sch 5 P in den Sü-Paxbfernseh^eraten RADUGA 726/730 ersetzt«
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05A-K
KT808
ku 606
KT808AM
transistor d 808
transistor kt
transistor 805A
2110-B1
KT 805
RFT Transistoren
2107B-2
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PDF
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MG120V2YS40
Abstract: No abstract text available
Text: TO SHIBA MG120V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG120V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One
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MG120V2YS40
120V2YS40
2-94C1A
MG120V2YS40
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PDF
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MG90V2YS40
Abstract: No abstract text available
Text: TO SHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • 4-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One
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MG90V2YS40
2-94C1A
MG90V2YS40
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE9602, NTE96L02, 16-Lead DI P, See Diag. 249 NTE96LS02, NTE96S02 Dual Retriggerable/Resettable Monostable Multivibrator cx 1 Q FIX 1 Q CD 1 Q 11EÉ log Q v cc 0 CX2 Q RX2 Q CD 2 Q1 Q g 11 g io a i n
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NTE9602,
NTE96L02,
16-Lead
NTE96LS02,
NTE96S02
43125l
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KRA221S
Abstract: KRA222S KRA223S KRA224S KRA225S KRA226S
Text: SEMICONDUCTOR TECHNICAL DATA KRA221SKRA226S EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
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kra221s-
kra226s
-800mA.
KRA221S
KRA222S
KRA223S
KRA224S
KRA225S
KRA226S
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P0 =7.5W GP ^11.7dB 7D^50% M A X IM U M RATINGS Ta = 25°C
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2SK3075
961001EAA1
2200pF
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