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    TRANSISTOR EB 2030 Search Results

    TRANSISTOR EB 2030 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EB 2030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM300DY-24 E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-24B Ic Collector current. 50A Vcex Collector-emitter voltage 1200V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		PDF QM50DY-24B E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB lc Collector current. 800A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		PDF QM800HA-2HB E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H lc Collector current. 75A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM75DY-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE Q M 100DY-2HK lc Collector current. 100A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM100DY-2HK 100DY-2HK E80276 E80271

    transistor eb 2030

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HBK lc Collector current. 150A Vcex Collector-emitter voltage 1000V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		PDF QM150DY-2HBK E80276 E80271 transistor eb 2030

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-HB Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		PDF QM30DY-HB E80276 E80271 60mA-

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-24 lc Collector current. 75A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM75DY-24 E80276 E80271

    transistor eb 2030

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB lc Collector current. 200A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		PDF QM200DY-HB E80276 E80271 transistor eb 2030

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM500HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM500HA-H lc Collector current. .500A V c e x Collector-emitter voltage. . 600V hFE DC current gain. 750 Insulated Type UL Recognized


    OCR Scan     		PDF QM500HA-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-HB Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		PDF QM50DY-HB E80276 E80271 100mA

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM80DY-3H HIGH POWER SWITCHING USE INSULATED TYPE Q M 80DY-3H lc Collector current. 80A Vcex Collector-emitter voltage 1400V hFE DC current gain. 100 Insulated Type UL Recognized


    OCR Scan     		PDF QM80DY-3H 80DY-3H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-24B lc Collector current. 75A Vcex Collector-emitter voltage 1200V hFE DC current gain. 750 Insulated Type UL Recognized


    OCR Scan     		PDF QM75DY-24B E80276 E80271

    QM50DY-H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-H Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		PDF QM50DY-H E80276 E80271 QM50DY-H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM1000HA-24B HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im ensions in mm C Feb. 1999 ♦ MITSUBISHI ELECTRIC


    OCR Scan     		PDF QM1000HA-24B QM1000H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30HY-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM30HY-2H 30HY-2H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-24B lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		PDF QM300HA-24B E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-24 Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM30DY-24 E80276 E80271

    QM300HA-2H

    Abstract: QM300H
    Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2HB lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		PDF QM300HA-2HB E80276 E80271 QM300HA-2H QM300H

    max 1786a

    Abstract: 2SB1120 SANYO 1786A
    Text: SANY O S E M I C O N D U C T O R CORP 22E 1> 7 cH 7 0 7 b OOD71bS 4 T-Z7-/3 2SB1120 % PNP Epitaxial Planar Silicon Transistor 2030 High-Current Driver Applications 1786A Applications . Strobes, voltage regulators, relay drivers, lamp drivers. Features . Low collector-to-emitter saturation volage VcE(sat max=_0,i, v ^


    OCR Scan     		PDF 1707b 00071t 2SB1120 250mm3 max 1786a SANYO 1786A

    2030DV

    Abstract: sc045
    Text: f r Z S G S - T Ä 7 # radei H O M S O N ESM 2030DV ILI CTl iOes NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS • ULTRAFAST FREEW HEELING DIODE . ISOLATED CASE (2500V RMS


    OCR Scan     		PDF 2030DV ESM2030DV 2030DV sc045

    VQE 24 led

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4 b TO & VDE UL GlobalOptoisolator CfiA sen ® ® ® 8EMK0 OEMKO NEMKO ® BAST H 11 A A 1* H 11A A 2 [CTR a 20% M in] 6 -P in D IP O p to lso la to rs A C In p u t/T tan slsto r O utput {CTR • 10% M in] H 11 A A 3


    OCR Scan     		PDF H11AA1, H11AA2, H11AA3, H11AA4 H11AA4* VQE 24 led

    Untitled

    Abstract: No abstract text available
    Text: m NBΠX KD324515HB Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl- B G t3 Dual Darlington Transistor Module 150 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are


    OCR Scan     		PDF KD324515HB Amperes/600

    transistor eb 2030

    Abstract: transistor 2030 2SC5209 oc pnp sc62
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1944 FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1944 is a silicon PNP epitaxial type transistor. It is designed with OUTLINE DRAWING Unit m high voltage, high collector current and high hFE.


    OCR Scan     		PDF 2SA1944 2SA1944 2SC5209. -500mA -10mA) SC-62 transistor eb 2030 transistor 2030 2SC5209 oc pnp sc62