TRANSISTOR 955 E
Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
Text: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP
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1-877-GOLDMOS
1301-PTB
TRANSISTOR 955 E
PTB 20148
35 W 960 MHz RF POWER TRANSISTOR NPN
IC 935
965 transistor
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Buzzer 4khz
Abstract: 1205 transistor buzzer 1205 LC5739 QFP64 p13 transistor OSC XTAL 32.768KHZ transistor 1205 transistor A 1205 12 Y
Text: Ordering number : ENN*6704 CMOS IC LC5739 4-Bit Microcontroller with LCD Driver Preliminary Overview The LC5739 is a CMOS 4-bit microcontroller that operates on low voltage and very low power consumption. It also contains 4K-byte ROM, 128-byte RAM, LCD drivers and melody function.
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LC5739
LC5739
128-byte
768kHz
P00-03,
P10-13
Figure11
Buzzer 4khz
1205 transistor
buzzer 1205
QFP64
p13 transistor
OSC XTAL 32.768KHZ
transistor 1205
transistor A 1205 12 Y
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1205 transistor
Abstract: buzzer 1205 transistor 1205 alm1
Text: Ordering number : ENN*6704 CMOS IC LC5739 4-Bit Microcontroller with LCD Driver Preliminary Overview The LC5739 is a CMOS 4-bit microcontroller that operates on low voltage and very low power consumption. It also contains 4K-byte ROM, 128-byte RAM, LCD drivers and melody function.
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LC5739
LC5739
128-byte
768kHz
P00-03,
P10-13
Figure11
1205 transistor
buzzer 1205
transistor 1205
alm1
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500 watts amplifier schematic diagram pcb layout
Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a
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AN1670/D
AN1670
500 watts amplifier schematic diagram pcb layout
500 watts amplifier schematic diagram
400 watts amplifier circuit diagram with specific
j327 transistor
PCB Rogers RO4003 substrate
smd transistor JJ
m30 smd TRANSISTOR
transistor RF 98 smd
computherm
SMD Transistor
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MRF184
Abstract: transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France
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AN1670/D
AN1670
MRF184
transistor 955 MOTOROLA
smd-transistor DATA BOOK
MRF6522-10
AN1670
RO4003
SMD TRANSISTOR
smd J225
Nippon capacitors
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MAX891L
Abstract: MAX891LEUA MAX892L MAX892LEUA
Text: 19-1223; Rev 0; 4/97 Current-Limited, High-Side P-Channel Switches with Thermal Shutdown The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side load-switching applications. These switches operate with inputs from 2.7V to 5.5V, making them ideal for
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MAX891L/MAX892L
500mA
250mA,
EIA481-1
MAX891L/MAX892L
MAX891L
MAX891LEUA
MAX892L
MAX892LEUA
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Untitled
Abstract: No abstract text available
Text: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)
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BSS92
TP2020L
TP1220L
VP2020L
VPDQ20.
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transistor power rating 5w
Abstract: No abstract text available
Text: A fa C pM m an A M P com pany C>N Power Transistor, 5W 2.3 GHz PH2323-5 V2.00 Features • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n B ase C o n figu ratio n C lass C O peratio n In terd igitated G e o m e try D iffu sed Em itter B allastin g R esistors
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PH2323-5
transistor power rating 5w
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Untitled
Abstract: No abstract text available
Text: Infineon i« c h n c I o g i <ií CMY 210 - 880 MHz to 85 MHz D o w n -C o n verte r A p p lic a tio n Note No. 038 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a
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EHT09
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VN10KM
Abstract: No abstract text available
Text: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the
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VN0610L
VN10KE
VN10KM
VN2222L
VNDP06.
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Untitled
Abstract: No abstract text available
Text: 19-1223; Rev O; 4/97 > k i y i x i > k i Current-Limited, High-Side P-Channe! Sw itches with Therm al Shutdown Genera! Description The MAX891L/MAX892L's maximum current limits are 500mA and 250mA, respectively. The current limit through the switch is programmed with a resistor from
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MAX891L/MAX892L
500mA
250mA,
5fl7bb51
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lm358 current sense
Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet
Text: P W R -N C H 2 0 1 -T-39-»-» 2-Channel MOSFET Array 400 V - 675 mA per channel POWER in t e g r a l s a a a Product Highlights 2 open-drain N-channel MOSFETs per package PWR-NCH201
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PWR-NCH201
OTO70°
PWR-NCH201BNC1
16-PIN
PWR-NCH201BNC2
PWR-NCH201BNC3
lm358 current sense
lm358 16pin diagram
LM324 noise
Enhancement Mode MOSFET Array
pin configuration of LM358
disadvantages of mosfet
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MC1391P
Abstract: MC1391
Text: g MOTOROLA MC1391 TV Horizontal Processor The MC1391 provides low -level horizontal sections including phase detector, oscillator and pre-driver. This device was designed for use in all types of television receivers. TV HORIZONTAL PROCESSOR • Internal Shunt Regulator
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MC1391
MC1391
MC1391P
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L42n
Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
Text: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:
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DD00212
HM3500,
HE12000
ECL10K/KH/100K
148-Pin
MIL-M-38510/600
MIL-STD-883C
L42n
HM3500
adb 630
L43n
"alu 4 bit"
ECL IC NAND
L44N
PT06-16-8P-S/transistor 03e
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U820 Diode
Abstract: 0555B TDB0555B Diode BAY 61 diode u820 TDB 0555B transistor a965 nf schaltungen darlington bd 645 P430-e11
Text: S IE M E N S Technische Mitteilung aus dem Bereich Bauelemente -io idun istechnik •Anwendungstechnik *Anwendung , wendungstechr idungstechnik -Anwendungstechnik •An ldt ' ' O idungstechnik *Anwendungstechnik *A 9ndi ' • ' Integrierter Fenster diskriminator TCA 965
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Untitled
Abstract: No abstract text available
Text: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C
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TT50M
ATC100A
5bM220S
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2SA606
Abstract: 2SC945 206C 2SA573 2SA574 2SA575 2SA733 SA607 2sc945b EP455
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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150nS
800nS
Te-25
500MHz.
2SA606
2SC945
206C
2SA573
2SA574
2SA575
2SA733
SA607
2sc945b
EP455
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16f 676
Abstract: kd 503 transistor LT 5251 transistor KD 503 ccd sharp 13B1 LR36685 RJ24J3AA0PT kd 506 transistor kd 778
Text: BACK SHARP RJ24J3AA0PT DESCRIPTION The RJ24J3AA0PT is a 1/3.2-type 5.60 mm solidstate image sensor that consists of PN photo diodes and CCD s (charge-coupled devices). With approximately 1 310 000 pixels (1 344 horizontal x 971 vertical), the sensor provides a stable highresolution color image.
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RJ24J3AA0PT
RJ24J3AA0PT
moni-5819
16f 676
kd 503 transistor
LT 5251
transistor KD 503
ccd sharp
13B1
LR36685
kd 506 transistor
kd 778
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tic6064
Abstract: 850-960MHz
Text: ERICSSON $ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor D escription The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier
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SGM2004M
Abstract: "GaAs N-channel Dual Gate" UA 471 CN sgm2004 100MIL ALSV Sony 104A
Text: SGM2004M SONY. GaAs N-channel Dual Gate MES FET Description Package Outline Unit : mm SG M 2 00 4M is an N-channel dual gate G aA s M ES F E T for UHF band low-noise am plification. T h is F E T is suitable fo r a wide range of ap p licatio n s including T V tuners, cellular radios
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SGM2004M
SGM2004M
OT-143
M-254
50MIL)
127mm
"GaAs N-channel Dual Gate"
UA 471 CN
sgm2004
100MIL
ALSV
Sony 104A
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lc 945 p transistor NPN TO 92
Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
Text: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.
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transistor 1201 1203 1205
Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
Text: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).
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AVS08
AVS10
110/220V
TEA6420J
TEA6422
TEA6425
TEA6430
TEA7605
transistor 1201 1203 1205
500W TRANSISTOR AUDIO AMPLIFIER
tda2050 bridge amplifier circuits
buh41
remote control encoder decoder
tda7294
220v 300w ac regulator circuit
BUH313
TDA7294 12v
TDA282
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Transistor TT 2246
Abstract: TT 2246 transistor tt 2246 2SC2232 transistor tt 2247 tk 2238 2SA969 2236 1F 2SA981 2SA965
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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/-900MHz,
900MHz.
Vct-18V
17c-25
200/unit
250-P00
2SA980
2SA981
Transistor TT 2246
TT 2246 transistor
tt 2246
2SC2232
transistor tt 2247
tk 2238
2SA969
2236 1F
2SA965
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2sc2238
Abstract: 2SC2194 LSOW 2SA953 2SC2002 2SC2003 2SC2235 2SC2236 2SC2239 transistor 2sC2238
Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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200/unit
2SC2260
2SC2261
2SC2262
2sc2238
2SC2194
LSOW
2SA953
2SC2002
2SC2003
2SC2235
2SC2236
2SC2239
transistor 2sC2238
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