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    TRANSISTOR D 571 Search Results

    TRANSISTOR D 571 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 571 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D087 BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D087 BSP122 613510/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D087 BSP89 613510/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D109 BSS87 MAM355 613510/03/pp8

    TRANSISTOR D 471

    Abstract: BP317 BSS87 MBB692
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D109 BSS87 MAM355 613510/03/pp8 TRANSISTOR D 471 BP317 BSS87 MBB692

    TRANSISTOR D 471

    Abstract: BP317 BSP89 MBB691 MBB692 SC-73
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D087 BSP89 613510/03/pp8 TRANSISTOR D 471 BP317 BSP89 MBB691 MBB692 SC-73

    TRANSISTOR D 471

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D087 BSP122 613510/03/pp8 TRANSISTOR D 471

    MAM355

    Abstract: msa63
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D109 BSS87 MAM355 BSS87 613510/03/pp8 771-BSS87-T/R MAM355 msa63

    04547

    Abstract: 5401 DM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D087 BSP89 OT223 OT223 MAM109 BSP89 613510/03/pp8 771-BSP89-T/R 04547 5401 DM

    TRANSISTOR D 471

    Abstract: bs108
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BS108 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D186 BS108 MAM150 613510/03/pp8 TRANSISTOR D 471 bs108

    m8 smd transistor

    Abstract: "MARKING CODE M8" TRANSISTOR D 471 smd transistor m8 TRANSISTOR SMD MARKING CODE oc MAM356 smd transistor marking m8 transistor smd M8 BSN20W TRANSISTOR SMD CODE PACKAGE SOT323
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2000 Mar 10 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


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    PDF M3D102 BSN20W OT323 603502/02/pp8 m8 smd transistor "MARKING CODE M8" TRANSISTOR D 471 smd transistor m8 TRANSISTOR SMD MARKING CODE oc MAM356 smd transistor marking m8 transistor smd M8 BSN20W TRANSISTOR SMD CODE PACKAGE SOT323

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


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    PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    PHD24N03LT

    Abstract: No abstract text available
    Text: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .


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    PDF PHD24N03LT PHD24N03LT OT428 OT428,

    Untitled

    Abstract: No abstract text available
    Text: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .


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    PDF PHD24N03LT PHD24N03LT OT428 OT428,

    Untitled

    Abstract: No abstract text available
    Text: PHD20N06T N-channel TrenchMOS transistor Rev. 01 — 22 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD20N06T in SOT428 D-PAK .


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    PDF PHD20N06T M3D300 PHD20N06T OT428 MBK091

    transistor BR 471 A

    Abstract: PHD95N03LT 08216
    Text: PHD95N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 18 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .


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    PDF PHD95N03LT M3D300 PHD95N03LT OT428 OT428, MBB076 MBK091 transistor BR 471 A 08216

    diode t25 4 c6

    Abstract: 7421 transistor transistor k 4213 1S697 KT521205 KTS21205 T-33-35 KT-52
    Text: fOUPIBt 729462 1 POWEREX INC Tfi DE | TSTMbSl O d F s BSS 0 | ' D "^-33-35^ K T5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor


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    PDF 0DD23Ã KT521205 1S697 Amperes/1200 KT521205 diode t25 4 c6 7421 transistor transistor k 4213 1S697 KTS21205 T-33-35 KT-52

    TRANSISTOR A3

    Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
    Text: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial


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    PDF bbS3T31 BLW60 TRANSISTOR A3 transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10

    transistor c 1974

    Abstract: No abstract text available
    Text: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.


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    PDF 001370a BLW60 0D13720 transistor c 1974

    02p SMD TRANSISTOR

    Abstract: No abstract text available
    Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application


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    PDF bbS3131 BST82 175DSon 02p SMD TRANSISTOR

    d 1879 TRANSISTOR

    Abstract: transistor D 1666 BFQ23C transistor d 1557 BFP91A B 1449 transistor TRANSISTOR D 471
    Text: Philips Sem Product specification “^ 3 / — / f PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> • BFQ23C 711Gfl5b 0 D M S 4 1 0 S41 PINNING PNP transistor in


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    PDF BFP91A. BFQ23C 711Gfl5b d 1879 TRANSISTOR transistor D 1666 BFQ23C transistor d 1557 BFP91A B 1449 transistor TRANSISTOR D 471

    ca3096

    Abstract: CA3096AE
    Text: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


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    PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C CA3096. ca3096 CA3096AE

    Untitled

    Abstract: No abstract text available
    Text: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    PDF bb53T31 D03D675 BUK638-500B bb53331

    2SC5012-T1

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


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    PDF 2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1

    BUX88

    Abstract: IEC134 9a 1b
    Text: N AMER PHILIPS/DISCRETE 5SE D • bbS3T31 ’g OIIOSÌ S ■ BUX88 - ,- - - _ A r - 3 3 - | g SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope intended for


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    PDF bbS3T31 BUX88 r-33-Iff T-33-15 7z88899 BUX88 7z8822s IEC134 9a 1b