tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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Original
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DL111/D
July-2001
r14525
tip122 tip127 audio amp schematic
mje521 equivalent
BJT small signal low power BD139
MJ15003 300 watts amplifier
2N3773 pinout
transistor mj11032 equivalent
MJ11028 transistor equivalent
2n3055 IC
2N3773 audio amplifier diagram
2n222 TRANSISTOR use as audio amplifier
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PDF
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12v DC motor
Abstract: remote speed control of ac motor 100K preset potentiometer DIODE in4005 IN4005 diode remote speed control of dc motor relay 12v dc 100rpm DC motor potentiometer 4k7 1K preset potentiometer
Text: RS 320-584 PB0224 Issue 4 OEM Speed control board 102 and 313 speed control board Installation and operating instructions 1 Contents Declarations 1.0 Description 2.0 Specification 3.0 Identification 4.0 313FD/D 12V DC motor - externally mounted transistor
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Original
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PB0224
313FD/D
IN4005
P600D
TIP141
TIPP116
100VA
12v DC motor
remote speed control of ac motor
100K preset potentiometer
DIODE in4005
IN4005 diode
remote speed control of dc motor
relay 12v dc
100rpm DC motor
potentiometer 4k7
1K preset potentiometer
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PDF
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AN569
Abstract: MTY14N100E 340G
Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS
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Original
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MTY14N100E/D
MTY14N100E
MTY14N100E/D*
AN569
MTY14N100E
340G
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PDF
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arco mica trimmer 30
Abstract: VRF2933 SD2933
Text: VRF2933 VRF2933MP 50V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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Original
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VRF2933
VRF2933MP
150MHz
30MHz,
SD2933
arco mica trimmer 30
SD2933
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PDF
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sn75465
Abstract: 75468
Text: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 S , DECEMBER 1 9 7 6 -R E V IS E D SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR A RRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P VIEW ) High-Voltage Outputs . . . 100 V
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OCR Scan
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SN75465
SN75469
500-mA
ULN2005A,
ULN2001A,
ULN2002A,
ULN2003A,
ULN2004A,
SN75466,
SN75468
75468
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PDF
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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OCR Scan
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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PDF
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2N4403
Abstract: 2N4402 transistor 2n4403 transistor 3050 JL003 4403 transistor
Text: 2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Veto =40V • C o llector D issipation: Pc <max =625mW ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage
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OCR Scan
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2N4402/4403
-625mW
2N4403
00/iA,
Jl-003
2N4402
transistor 2n4403
transistor 3050
JL003
4403 transistor
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PDF
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BUK637-600A
Abstract: BUK637-600B BUK637-600C BUK637
Text: N AMER P H I L I P S / D I S C R E T E SSE D • ^ 5 3 = 1 3 1 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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BUK637-600A
BUK637-600B
BUK637-600C
BUK637
-600A
-600B
-600C
1E-01
1E-03
1E-04
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PDF
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7B468
Abstract: 7B465 76465 75469 sn75466 sn75465
Text: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 5 , DECEMBER 1 9 7 6 -REVISED SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P V IEW ! • High-Voltage Outputs . . . 100 V
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OCR Scan
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SN75465
SN75469
500-mA
ULN2005A,
ULN2001
ULN2002A,
ULN2003A,
ULN2004A,
SN7S465
7B468
7B465
76465
75469
sn75466
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PDF
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k 246 transistor fet
Abstract: 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120
Text: N AMER PHILIPS/DISCRETE SSE D • ^53=131 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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OCR Scan
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BUK637-600A
BUK637-600B
BUK637-600C
BUK637
-600A
-600B
-600C
k 246 transistor fet
4428A
BUK637-600A
BUK637-600B
BUK637-600C
SE120
SE-120
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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OCR Scan
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Q020bfl5
BUK637-600A
BUK637-600B
BUK637-600C
BUK637
reve637-600C
T-39-15
IB-01
IE-02
IE-03
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PDF
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K545
Abstract: BUK545 BUK545-200A BUK545-200B
Text: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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OCR Scan
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7110flEb
K545-200A/B
-SOT186
BUK545
-200A
K545
BUK545-200A
BUK545-200B
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE PowerM OS transistor ObE D • bbBBTBl 0014760 1 B U Z 33T T - 3<M3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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OCR Scan
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T0218AA
BUZ331
T-39-13
bb53c
bb53T31
00147fib
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PDF
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BF419
Abstract: No abstract text available
Text: BF419 _ HIGH-VOLTAGE TRANSISTOR S ilico n n-p-n transistor in TO 126 plastic package in tended fo r use as a d river fo r line o u tp u t transistors in c o lo u r tv receivers. Q U IC K R E F E R E N C E D A T A Collector-base voltage open e m itte r
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BF419
BF419
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PDF
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Untitled
Abstract: No abstract text available
Text: m H EW LETT* PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high perform ance NPN bipolar transis
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AT-32063
OT-363
SC-70)
AT-32063
OT-363
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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PDF
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2SC 968 NPN Transistor
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from
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OCR Scan
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2SC5007
2SC 968 NPN Transistor
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PDF
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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OCR Scan
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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PDF
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transistor NEC D 822 P
Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA
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2SC5336
2SC3357
transistor NEC D 822 P
transistor NEC B 617
NEC D 822 P
NEC B 617
NEC D 809
50/transistor NEC D 822 P
NEC D 809 F
P1093
4435 power ic
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PDF
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HC 148 TRANSISTOR
Abstract: AN569 MTY14N100E
Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY14N 100E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high
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OCR Scan
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MTY14N100E/D
Speci100E
340G-02
O-264
HC 148 TRANSISTOR
AN569
MTY14N100E
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PDF
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S heet M TY14N100E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high
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OCR Scan
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MTY14N100E
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PDF
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d732
Abstract: B696 2SD732 D732K 2SB696K D-732 B696K 2SB696 2SD732K D696K
Text: Epitaxial Mesa Type Silicon Transistor For AF Power Amplifier- Use ★ [N E W ]/Te n ta tive Specification ★For output stage of 60 watts power amplifier ★ Enough ability of voltage, current and antidestruc tion. 467A . — D U ? ÿ 9 • I î i ÿ l;J±
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2SD732,
2SB696
2SB696,
2SD732
2SB696K,
2SD732K
B696K
D732K
D696K
d732
B696
D732K
2SB696K
D-732
2SD732K
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PDF
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CEB6031L
Abstract: No abstract text available
Text: CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 30V, 60A, R d s o n =1 O m Q @ Vgs=1 0V. R d s (on )=1 5m Q @ Vgs=4.5V. • Super high dense cell design for extremely low R • High power and current handling capability.
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10iti
15itiQ
O-220
O-263
to-263
to-220
CEP6031L/CEB6031L
CEB6031L
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PDF
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75n06
Abstract: GC230 GC35 TT218 STH75N06FI
Text: STH75N06 STH75N06FI SGS-THOMSON ]D ^©|[LlCTi©^ iJ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH75N06 STH75N06FI . . . . . . . . V dss R D S o n 60 V 60 V 0.014 i l 0.014 Sì 75 A 48 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANC HE TESTED
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STH75N06
STH75N06FI
TH75N06
STH75N06FI
O-218
ATT218
SCHEM250
STH75N06/FI
75n06
GC230
GC35
TT218
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PDF
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