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    TRANSISTOR CODE 0B Search Results

    TRANSISTOR CODE 0B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CODE 0B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Pressure sensor 2 PNP transistor switching outputs PK01VR-N12-2UP8X-V1141 • Compact design ■ Pressure and vacuum monitoring ■ Display rotatable by 180° ■ Excellent EMC properties ■ Pressure range -1 … 0 bar rel. Wiring diagram Type code Ident no.


    Original     		PDF PK01VR-N12-2UP8X-V1141 30VDC 2013-07-13T17 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Pressure sensor 2 PNP transistor switching outputs PK01VR-N14-2UP8X-V1141 • Compact design ■ Pressure and vacuum monitoring ■ Display rotatable by 180° ■ Excellent EMC properties ■ Pressure range -1 … 0 bar rel. Wiring diagram Type code Ident no.


    Original     		PDF PK01VR-N14-2UP8X-V1141 30VDC 2013-07-13T17 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Pressure sensor 2 PNP transistor switching outputs PK01VR-N12AL-2UP8X-V1141 • Compact design ■ Pressure and vacuum monitoring ■ Display rotatable by 180° ■ Excellent EMC properties ■ Pressure range -1 … 0 bar rel. Wiring diagram Type code Ident no.


    Original     		PDF PK01VR-N12AL-2UP8X-V1141 30VDC 2013-07-13T17 D-45472

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon High Voltage Transistor BF 622 Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: B F 623 PNP Type Marking Ordering code for versions in bulk Ordering code lor


    OCR Scan     		PDF Q62702-F568 Q62702-F1052

    Untitled

    Abstract: No abstract text available
    Text: 32E D • fi23b32G 0017243 T ISIP S M B T 4124 NPN Silicon Sw itching Transistor -SIEMENS/ SPCL-, SEMICONDS • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for versions in bulk Ordering code for


    OCR Scan     		PDF fi23b32G 23b320 QG17245

    D1758

    Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
    Text: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)


    OCR Scan     		PDF 2SD1758F5 SC-63) D1758 2SD1758F5 temperature00 2SD1758 Transistor d1758 d1758 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ


    OCR Scan     		PDF Q62702-C2254 OT-23 0535b05

    equivalent transistor TT 3043

    Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
    Text: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1


    OCR Scan     		PDF 7110fl2tj BFS540 OT323 MBC370 OT323. emitte-176 equivalent transistor TT 3043 transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308

    bf 333 transistor

    Abstract: bf 331 transistor Bf 331
    Text: PNP Silicon High Voltage Transistor • • • • • BF 623 Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BF 622 NPN Type Marking Ordering code for versions in bulk


    OCR Scan     		PDF Q62702-F567 Q62702-F1053 bf 333 transistor bf 331 transistor Bf 331

    Untitled

    Abstract: No abstract text available
    Text: 00 31 6 0 3 773 Philips Sem iconductors M APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AUER PHILIPS/DISCRETE FEATURES b^E I> PINNING PIN • Low noise • Low intermodulation distortion DESCRIPTION Code: BFR90A/02 • High power gain


    OCR Scan     		PDF BFR90A BFR90A/02 ON4184) BFQ51.

    K 4005 transistor

    Abstract: ic MARKING FZ 2SC4505 T100 T200 2SC4505CE
    Text: 2SC4505 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT3, SOT-89, SC-62) package • package marking: 2SC4505; CE-*, where ★ is hFE code • high voltage BVCEO = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for


    OCR Scan     		PDF 2SC4505 OT-89, SC-62) 2SC4505; 00147flb K 4005 transistor ic MARKING FZ 2SC4505 T100 T200 2SC4505CE

    Untitled

    Abstract: No abstract text available
    Text: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA


    OCR Scan     		PDF 2SB1198K SC-59) 2SB1198K; 2SD1782K

    2SC5053

    Abstract: No abstract text available
    Text: 2SA1900 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SA1900; ALA-, where ★ is hFE code • PC - 2 W (when mounted on a 40 x 40 x 0.7 mm ceramic substrate) • • 2SA1900 (MPT3) ♦0.2


    OCR Scan     		PDF 2SA1900 SC-62) 2SA1900; A/-50 2SC5053 2SA1900

    2SA amplifier

    Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
    Text: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K


    OCR Scan     		PDF 2SA1514K 2SA1579 SC-59) SC-70) 2SA1579; -120V 2SC3906K 2SC4102 2SA1514K 2SA amplifier H1000I 2SA1579 2SC4102 transistor 2SA transistor PNP

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code BF 988 - Q62702-F36 Pin Configuration 2 4 1 3 S D Û2 Package1


    OCR Scan     		PDF Q62702-F36 300MHz r-700 fl235b05 00bbfl73 EHM070I2 EHM07013 00bb074

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon A F and Switching Transistor BCX 41 B SS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)


    OCR Scan     		PDF Q62702-C1659 Q62702-S535 OT-23 BCX41 BSS64 B235bQ5

    Siemens diode Ssi

    Abstract: No abstract text available
    Text: SIEMENS BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 78 Vbs 800 V b 1.5 A ffDS on Package Ordering Code 8 £2 TO-220 AB C67078-S1318-A2 Maximum Ratings Symbol Parameter Values Unit A Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1318-A2 23SbOS i23SbQ5 Siemens diode Ssi

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 10L Not far new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 1 0 L Vds 50 V b 23 A ^DS on 0.07 £2 Package Ordering Code TO-220 AB C67078-S1329-A2 Maximum Ratings Parameter Symbol


    OCR Scan     		PDF O-220 C67078-S1329-A2 0b15b

    BUZ24

    Abstract: SIEMENS EC 230 98 C160 CID32
    Text: SIEM ENS SIPMOS Power Transistor BUZ 24 • N channel • Enhancement mode • Avalanche-rated Type Vos Id ^DS on Package 1> Ordering Code BUZ 24 100 V 32 A 0.06 ß TO-204 AE C67078-S1003-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 °C


    OCR Scan     		PDF O-204 C67078-S1003-A2 535b05 00b7fi0S fi235bOS 00b7fl0b BUZ24 SIEMENS EC 230 98 C160 CID32

    2SC5053

    Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
    Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate


    OCR Scan     		PDF 2SC5053 SC-62) 2SC5053; 2SA1900 2SC5053 bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING

    Untitled

    Abstract: No abstract text available
    Text: BSP 297 I nf ineon lachnologias SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •V'GS .h = a 8 - 2 0 V Pin 1 Type l'o s BSP 297 200 V Type BSP 297 Ordering Code Q67000-S068 0.65 A Pin 2 flDS(on) Package Marking 2£2


    OCR Scan     		PDF Q67000-S068 OT-223 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    BUZ24

    Abstract: C160
    Text: SIEMENS SIPMOS Power Transistor BUZ 24 • N channel • Enhancement mode • Avalanche-rated Type Vos Id ^DS on Package 1> Ordering Code BUZ 24 100 V 32 A 0.06 ß TO-204 AE C67078-S1003-A2 Maximum Ratings Parameter Symbol Tc = 27 °C Values Unit 128 Avalanche current, limited by


    OCR Scan     		PDF BUZ24 O-204 C67078-S1003-A2 fi235bOS 00b7fl0b C160

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 310 SIPMOS Power Transistor • N channel * Enhancement mode V3l05'55 3 Pin 1 Pin 2 Pin 3 D G S Type Vds b ffDS on Package Ordering Code BUZ 310 1000 V 2.5 A 5 Í2 TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Drain source voltage


    OCR Scan     		PDF O-218 C67078-A3101-A2 235bGS bridJJ40 fl235bG5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode V’fOb'bS ' fé • Avalanche-rated 3 P in i Pin 2 Pin 3 D G S Type Vbs b ^bsion Package Ordering Code BUZ 326 400 V 10.5 A 0.5 Q T O -2 18 A A C67078-S3112-A2 Maximum Ratings


    OCR Scan     		PDF C67078-S3112-A2 DGfi474fi 023Sbà D0fl474T