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    TRANSISTOR CASE TO 105 Search Results

    TRANSISTOR CASE TO 105 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CASE TO 105 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fast diodes 400 v

    Abstract: BUT232V BUT23
    Text: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUT232V fast diodes 400 v BUT232V BUT23

    BUT23

    Abstract: No abstract text available
    Text: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUT232V BUT23

    2SB1282

    Abstract: ITO-220 TP4J10 transistor TC-10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1282 Case : ITO-220 TP4J10 Unit : mm 4A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SB1282 ITO-220 TP4J10) Resista282 -40mA 2SB1282 ITO-220 TP4J10 transistor TC-10

    22a ic

    Abstract: 2SB1448 TP15J10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case : ITO-3P TP15J10 Unit : mm -15A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SB1448 TP15J10) 22a ic 2SB1448 TP15J10

    2sB1283

    Abstract: ITO-220 TP7J10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1283 Case : ITO-220 TP7J10 Unit : mm A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SB1283 ITO-220 TP7J10) 005IC -70mA 200mm 2sB1283 ITO-220 TP7J10

    2SD1791

    Abstract: ITO-220 TP7L10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1791 Case : ITO-220 TP7L10 Unit : mm 7A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1791 ITO-220 TP7L10) 002IC 004IC 2SD1791 ITO-220 TP7L10

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case : ITO-3P TP15J10 Unit : mm -15A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SB1448 TP15J10)

    2SD1795

    Abstract: ITO-220 TP10K40
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1795 Case : ITO-220 TP10K40 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1795 ITO-220 TP10K40) 2SD1795 ITO-220 TP10K40

    DARLINGTON 10A

    Abstract: No abstract text available
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD2196 Case : ITO-3P TP15L20 Unit : mm 15A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD2196 TP15L20) 002IC DARLINGTON 10A

    2Sd1788

    Abstract: ITO-220 TP4L10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1788 Case : ITO-220 TP4L10 Unit : mm 4A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1788 ITO-220 TP4L10) 100mm 150mm 2Sd1788 ITO-220 TP4L10

    2SD1788

    Abstract: ITO-220 TP4L10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1788 Case : ITO-220 TP4L10 Unit : mm 4A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1788 ITO-220 TP4L10) 100mm 150mm 2SD1788 ITO-220 TP4L10

    2SD1793

    Abstract: ITO-220 TP10L10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1793 ITO-220 TP10L10) 002IC 004IC 2SD1793 ITO-220 TP10L10

    ITO-220

    Abstract: TP4L20 2SD1789 AX12M
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1789 Case : ITO-220 TP4L20 Unit : mm 4A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1789 ITO-220 TP4L20) ITO-220 TP4L20 2SD1789 AX12M

    2SD1795

    Abstract: ITO-220 TP10K40 7105A
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1795 Case : ITO-220 TP10K40 Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1795 ITO-220 TP10K40) 2SD1795 ITO-220 TP10K40 7105A

    0033a

    Abstract: 22a ic 2SD2196 TP15L20
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD2196 Case : ITO-3P TP15L20 Unit : mm 15A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD2196 TP15L20) 002IC 0033a 22a ic 2SD2196 TP15L20

    2SD1792

    Abstract: ITO-220 TP7L20
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1792 Case : ITO-220 TP7L20 Unit : mm 7A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1792 ITO-220 TP7L20) 002IC 004IC 2SD1792 ITO-220 TP7L20

    2SB1284

    Abstract: soa 01 ITO-220 TP10J10
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1284 Case : ITO-220 TP10J10 Unit : mm A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SB1284 ITO-220 TP10J10) 005IC 2SB1284 soa 01 ITO-220 TP10J10

    transistor TC-10

    Abstract: 2SD1789 ic ax 1 TP4L20 ITO-220 TC 100 ax
    Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1789 Case : ITO-220 TP4L20 Unit : mm 4A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    Original     		PDF 2SD1789 ITO-220 TP4L20) transistor TC-10 2SD1789 ic ax 1 TP4L20 ITO-220 TC 100 ax

    GP500

    Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
    Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.


    OCR Scan     		PDF ACY33 ACY33 --Y33 Q60103 GP500 bnsu germanium af transistors Germanium Transistor transistor ACY PNP

    3004x

    Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		PDF fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79

    transistor bc 541

    Abstract: TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa
    Text: 55C D • û23St.D5 OOQ405Ö T PNP Germanium RF Transistor -SIEMENS A F 139 - AKTIENGESELLSCHAF 31-07 for input stages, m ixer and oscillator stages up to 860 MHz AF 139 is a germanium PNP mesa transistor in TO 92 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


    OCR Scan     		PDF OOQ405Ö Q60106-X139 135H-- AF139 transistor bc 541 TRANSISTOR BC 534 PNP transistor Siemens 14 S S 92 AF139 TRANSISTOR BC 534 Germanium power Germanium mesa

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		PDF fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M

    RF Transistor BF198

    Abstract: BF198 transistor bf 198 1AM transistor compatible transistor 1am
    Text: BF198 NPN Silicon Planar Transistor designed for RF applications; low feedback capacitance, especially suited for AGC in emitter-grounded IF stages in TV sets. to" 2.5 -*K6* r max. Q50 Plastic case = JEDEC TO-92 TO-18 compatible The case is impervious to light


    OCR Scan     		PDF BF198 RF Transistor BF198 BF198 transistor bf 198 1AM transistor compatible transistor 1am

    Transistor BFX 59

    Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
    Text: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher


    OCR Scan     		PDF Q60206-X Transistor BFX 59 BFX59F BFX59 kbr 1000 transistor BFX59 transistor w 04 59 Transistor BFX 4