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    TRANSISTOR C2078 Search Results

    TRANSISTOR C2078 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C2078 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MC2003

    Abstract: MC2000 MC2023 MC2002 MC2100 MC2052 MC2124 MC2073 MC2112 MC2153
    Text: INTEGRATED CIRCU ITS FROM MOTOROLA mm oo M C2000 Series 0 to +75°C M C2100 Series (—55 to +125°C) M T T L II integrated circu its co m prise a fa m ily o f transistor-transistor logic designed fo r general pu rpo se digital applications. T h e fa m ily has a high o pe ratin g speed <30-50


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    PDF MC2000 MC2100 MC2028/MC2078 MC2128/MC2178 MC2003 MC2023 MC2002 MC2052 MC2124 MC2073 MC2112 MC2153

    transistor C2075

    Abstract: g10 smd transistor SMD Transistor 1c
    Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


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    PDF 74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c

    C1685

    Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
    Text: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,


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    PDF 74bbflSl 0GQ3577 MCT62 MCT61 MCT66 16-pin C2091 MCT9001 C1685 C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A

    transistor c1684

    Abstract: No abstract text available
    Text: fiJUALITY T E C H N O L O G I E S 6 CORP 27 E QUALITY TECHNOLOGIES 1 D • 74fc,bflSl G 0 D 3 S 3 7 Ö phototrahs.stor optocouplhr ^ L MCT272 DESCRIPTION PACKAGE DIMENSIONS The MCT272 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    PDF MCT272 MCT272 MCT9001 transistor c1684

    Untitled

    Abstract: No abstract text available
    Text: dUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES e S7E D 7 4 h b Ö S 1 000354*1 4 PHOTOTRANSISTOR OPTOCOUPLERS T—41-83 MCT276 PACKAGE DIMENSIONS db The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    PDF MCT276 MCT276 m-78T C2079 MCT9001

    SMD Transistor AFR

    Abstract: No abstract text available
    Text: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    PDF 74bbfl51 T-41-83 MCT277 MCT277 C2090 15pseconds MCT9001 SMD Transistor AFR

    smd TRANSISTOR 27e

    Abstract: TRANSISTOR SMD a38 smd 27E
    Text: dUALITY. TE CHN OLOGIES CORP 27E D 74bt.flSl QQ03M37 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES T ~ 4 I- CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.


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    PDF QQ03M37 CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z CNY17 CNY17F1: CNY17F2: CNY17F3: E50151 ii54i smd TRANSISTOR 27e TRANSISTOR SMD a38 smd 27E

    Untitled

    Abstract: No abstract text available
    Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    PDF 74tibfiSl Q003541 MCT274 MCT274 C2090 C2079 MCT9001

    S7E SMD TRANSISTOR

    Abstract: No abstract text available
    Text: DUALITY -TECHNOLOGIES CORP 27E D Bl QUALITY TECHNOLOGIES • 74bfciä51 Q0G3S4S 7 PHOTOTRANSISTOR OPTOCOUPLER T—41—83 MCT275 DESCRIPTION PACKAGE DIMENSIONS The MCT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


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    PDF 74bfcià MCT275 MCT275 MCT9001 S7E SMD TRANSISTOR

    a36 smd transistor

    Abstract: transistor smd 4z
    Text: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED


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    PDF bfl51 CNY17-1/1Z Y17-3/3Z Y17-2/2Z Y17-4/4Z CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: a36 smd transistor transistor smd 4z

    mca2255

    Abstract: smd TRANSISTOR code AJ
    Text: DUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • TMbtaSl 0003435 VDE APPROVED PHOTODARLINGTON OPTOCOUPLERS _ T - H I ~ 2 r MCA2230Z MCA2231Z MCA2255Z PACKAGE DIMENSIONS { ft rih Æj DESCRIPTION The MCA2230, MCA2231 and MCA2255 are


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    PDF MCA2230Z MCA2231Z MCA2255Z MCA2230, MCA2231 MCA2255 MCA2230 MCA2231, MCT9001 smd TRANSISTOR code AJ

    smd diode UJ 64 A

    Abstract: smd TRANSISTOR 27e
    Text: dUA LIT Ÿ TE CH NOL OGIE S CÔRP QUALITY TECHNOLOGIES 27E D 74bt.aSl 00034^5 7 VDE APPROVED NON-ZERO-CROSSING TRIACS T -U -2 7 MCP3020/0Z* MCP3021/1Z MCP3022/2Z PACKAGE DIMENSIONS db db DESCRIPTION The MCP3020, MCP3021 and MCP3022 are optically isolated


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    PDF MCP3020/0Z* MCP3021/1Z MCP3022/2Z MCP3020, MCP3021 MCP3022 MCT9001 smd diode UJ 64 A smd TRANSISTOR 27e

    smd 27E

    Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
    Text: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac


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    PDF MCP3030* MCP3040/0Z* 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z MCP3031 MCP303Z smd 27E MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor