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    TRANSISTOR C 5611 Search Results

    TRANSISTOR C 5611 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 5611 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XY 805 ic

    Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
    Text: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006


    Original     		PDF Q97301013 Q97111419 Q97111419 BFY180 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 XY 805 ic microwave transducer marking A04 on semiconductor marking code A04

    PHP44N06LT

    Abstract: smd transistor marking sep
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP44N06LT, PHB44N06LT, PHD44N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    Original     		PDF PHP44N06LT, PHB44N06LT, PHD44N06LT PHP44N06LT O220A OT404 OT428 PHD44N06LT smd transistor marking sep

    FX2N-128MR

    Abstract: FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR
    Text: MITSUBISHI ELECTRIC Programmable Logic Controllers 40 90 X IN 0 1 2 3 4 5 6 7 L COM X0 X2 X4 X6 X10 X12 X14 X16 24+ X1 X3 X5 X7 X11 X13 X15 X17 N POWER 0 1 2 3 4 5 6 7 IN 10 11 12 13 14 15 16 17 MELSEC FX0S, FX0N, FX2N POWER RUN BATT.V FX 2N-16EX OUT FX 2N-32MR


    Original     		PDF 2N-16EX 2N-32MR E-08014 D-40880 S-20123 H-1124 CH-8309 FX2N-128MR FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR

    Mitsubishi MELSEC FX2N-80MR

    Abstract: mitsubishi plc FX2n-32mt SERIES FX2N 64mr manual FX2N-128MR Mitsubishi MELSEC FX2N-80MR-DS fx2n-64mr-ds mitsubishi plc MELSEC FX2N 32-MR SERIES FX2N-32MR-ES/UL FX2N-32MR-DS FX2N-4DA
    Text: MELSEC FX SYSTEM DESCRIPTION The FX Family The MELSEC FX Family FX BASICS Description Special features: The MELSEC FX family includes a very comprehensive range of base and expansion modules, enabling you to configure a customised system tailored to your precise requirements.


    Original     		PDF

    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


    Original     		PDF

    mc34063

    Abstract: BF-442 MC34063 design examples MC34063 current source mc34063 step down external transistor flyback MC34063 MPSU51A LED DRIVER BY MC34063 a78s40 uA78S40
    Text: AN920/D Theory and Applications of the MC34063 and mA78S40 Switching Regulator Control Circuits http://onsemi.com Prepared by: Jade Alberkrack ON Semiconductor APPLICATION NOTE This paper describes in detail the principle of operation of the MC34063 and µA78S40 switching regulator subsystems. Several


    Original     		PDF AN920/D MC34063 mA78S40 A78S40 r14525 BF-442 MC34063 design examples MC34063 current source mc34063 step down external transistor flyback MC34063 MPSU51A LED DRIVER BY MC34063 uA78S40

    LED DRIVER BY MC34063

    Abstract: MC34063 current source ferroxcube 1408p-l00-3cb core MC34063 driver led flyback MC34063 AN920 MPSU51A MOTOROLA SEMICONDUCTOR mc34063 Ferroxcube 1408PCB1 AN920/D
    Text: AN920/D Theory and Applications of the MC34063 and mA78S40 Switching Regulator Control Circuits http://onsemi.com Prepared by: Jade Alberkrack ON Semiconductor APPLICATION NOTE This paper describes in detail the principle of operation of the MC34063 and A78S40 switching regulator subsystems. Several


    Original     		PDF AN920/D MC34063 mA78S40 A78S40 LED DRIVER BY MC34063 MC34063 current source ferroxcube 1408p-l00-3cb core MC34063 driver led flyback MC34063 AN920 MPSU51A MOTOROLA SEMICONDUCTOR mc34063 Ferroxcube 1408PCB1 AN920/D

    PCA1318P

    Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
    Text: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product


    Original     		PDF DN-42 REPLACec-99 30-Jun-00 PCA1318P philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112

    A03 transistor

    Abstract: BFY280
    Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥


    Original     		PDF Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor

    on semiconductor marking code A04

    Abstract: marking A04 C BFY182
    Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz


    Original     		PDF Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 on semiconductor marking code A04 marking A04 C

    MICROWAVE TRANSITOR

    Abstract: BFY405
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz Outstanding G ms = 23 dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY405 Transistor25 MICROWAVE TRANSITOR BFY405

    A03 transistor

    Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
    Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		PDF Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor Q62702F-1610 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor

    marking A04

    Abstract: BFY181 p 181 V Q62702F1715
    Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz


    Original     		PDF Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 marking A04 p 181 V Q62702F1715

    A03 transistor

    Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
    Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz


    Original     		PDF Q62702F1609 Q62702F1713 BFY183 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor BFy 90 transistor microwave transducer marking code microwave

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    Philips SPA 1100

    Abstract: contactless Functional Specification
    Text: INTEGRATED CIRCUITS UBB1000 Contactless chip-card interface Preliminary specification File under Integrated circuits, IC18 July 1991 Philips Semiconductors PHILIPS PHILIPS Preliminary specification Philips Semiconductors Contactless chip-card interface UBB1000


    OCR Scan     		PDF UBB1000 UBB1000 83C852) Telex35000 ADS89 Philips SPA 1100 contactless Functional Specification

    transistor KSP 42

    Abstract: KEL5002A PC17L1 KDP6004A ksp 13 replacement KPI-L05 KST-312 PC-17K1 PC-17L1 KPI-261D
    Text: Contents Optoelectronic Sensors Contents 08 Detectors 10 Emitters 12 Photo Interrupters 16 Photo Couplers 21 Photo ICs 24 Optic Receiver Modules 26 LEDs 29 Infrared Transceiver Modules lrDA 31 Fiber Optic Devices(FOD) 33 Fiber Optic Transceivers(FOT) 34 Optical Communication Devices


    OCR Scan     		PDF KHP2032 KOD-1017 KOD-1016 KOD-1086 KOD-1051 KOM-1020 KOM-1021 K0M-5121 transistor KSP 42 KEL5002A PC17L1 KDP6004A ksp 13 replacement KPI-L05 KST-312 PC-17K1 PC-17L1 KPI-261D

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz


    OCR Scan     		PDF Q97302026 Q97111414 BFY280 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY280 GXM05552

    A21E

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz


    OCR Scan     		PDF BFY181 Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A21E

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •


    OCR Scan     		PDF BFY180 Q97301013 Q97111419 BFY180 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz


    OCR Scan     		PDF BFY182 Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 FY182 GXM05552

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY183 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Hermetically sealed microwave package • f-r = 8 GHz, F = 2.3 dB at 2 GHz


    OCR Scan     		PDF BFY183 Q62702F1609 Q62702F1713 BFY183 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 193 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • f T = 8 GHz, F = 2.3 dB at 2 GHz


    OCR Scan     		PDF Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 BFY193 GXM05552