IRG7PH42U-EP
Abstract: 124 transistor
Text: PD - 96233 IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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IRG7PH42UPbF
IRG7PH42U-EP
O-247AD
IRG7PH42U-EP
124 transistor
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IRG7PH42UPBF
Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U
Text: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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6233A
IRG7PH42UPbF
IRG7PH42U-EP
O-247AD
IRG7PH42UPBF
IRG7PH42U-EP
C-150
IGBT 60A 1200V
of igbt 1200V 60A
IRG7PH42U
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Untitled
Abstract: No abstract text available
Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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96233B
IRG7PH42UPbF
IRG7PH42U-EP
O-247AD
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irg7ph42upbf
Abstract: marking code 5339
Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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96233B
IRG7PH42UPbF
IRG7PH42U-EP
O-247AD
marking code 5339
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Untitled
Abstract: No abstract text available
Text: Outdoor-VRp-ILc-15000/30000-5339 ~ 15/30kVA, 400 vac delta,230/400 vac wye Outdoor VRp-ILc Series 203 Precision Voltage Regulator + Isolation Transformer Outdoor International Precision voltage regulator Isolation transformer VRp-ILc Outdoor VRp-ILc models
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Outdoor-VRp-ILc-15000/30000-5339
15/30kVA,
400Vdelta
230/400V
tdoor-VRp-ILc-15000-30000-5339-2007-02-15
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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stk*400-050
Abstract: STK400
Text: Ordering number : EN4822A Thick Film Hybrid IC STK400-290 AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-compatibility to permit a single PCB to be
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EN4822A
STK400-290
stk*400-050
STK400
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STK401-340
Abstract: STK401-140 stk401-200 STK400-290 stk400 200 STK400-110 STK400-010 STK400-020 STK400-030 STK400-040
Text: Ordering number : EN4822A Thick Film Hybrid IC STK400-290 AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-compatibility to permit a single PCB to be
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EN4822A
STK400-290
STK401-340
STK401-140
stk401-200
STK400-290
stk400 200
STK400-110
STK400-010
STK400-020
STK400-030
STK400-040
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JE 800 transistor
Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )
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uPA76HA
JE 800 transistor
upa76
PA76HA
KJE transistor
pa76h
JE 33
KJE 17 transistor
B0188
361-s
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FCK 111
Abstract: SS5100 la 5531 TRANSISTOR BO 346 T108 T46C T-10803 SKs 22 TRANSISTOR marking EP
Text: - y - ^ NEC M Com pound Transistor i ï r / v f x & GA1 F4N ^ - f ì & • m m o s < J T X 1& t j i $ : f t M L X ^ t i ' c (R i = 22 k£2, R2 = 47 kQ) c o G N 1 F 4 N t 3 > 7 ° IJ y > 9 'J X i t m T è & 1~c ( T a = 25 °C ) II Marking fê
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b0958
Abstract: JE 33 PA33 R054-2 je 340 sis 5511 jl06 A0246
Text: v—S •S' î a - ê - h ^ Com pound Transistor A N I L4M # ftfó m i t o 7 / M x i £ i / i £ R i = 47 f t j t kQ , L T v ^ R 2= 4 7 ( T O î : mm t o kû) c O A A 1 L 4 M ¿1 =1 > 7 ° U / > ? U - C fë ffl X " £ £ t e ( T a = 25 ° C ) g II a u 9 9
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SC-43B
b0958
JE 33
PA33
R054-2
je 340
sis 5511
jl06
A0246
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RM4T
Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
Text: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ
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2SK800
2SK800Ã
RM4T
r460 FET
2SK800
lg lx 221
TC6142
b0992
tt 22
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2SD1518
Abstract: 5AE0 2SD1581 C3052
Text: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^
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2SD1581
PU0988
2SD1518
5AE0
2SD1581
C3052
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ni3ti
Abstract: LU024 M10258 IS333 k 6115 FK 231 SA 220 UI02 S333 T108 T460
Text: NEC m = f = r i v « r • 7— S • 5 /— h Compound Transistor x FN1L3M it H o ^ 'M M T x f f i i j t i - r t i l L T v ' i t c ¥ f i : mm 2 . 8 ± 0.2 1.5 (R i = 4.7 kQ, R2= 4.7 kQ) O — V v V R O FA1L3M t =1 > 7 °'! / > 7 ') T l Ì f f l T 'è
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PWS10
Cycles50
au99-^
ni3ti
LU024
M10258
IS333
k 6115
FK 231 SA 220
UI02
S333
T108
T460
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Transistor BC 227
Abstract: TRANSISTOR BC 456 TRANSISTOR BC 413 AA1A4M PA33 T108 transistor BC 247 TRANSISTOR BC 413 b 3ete ATT 1177
Text: / 7 s— ^ - 2 / — h N EC i i r / \ f 7 J ^ Com pound Transistor AA1A4M Í A 1*1Ü # c N P N X '> ij =¡> h 7 V i > X ^ ® a ip - f i : mm o / < ^ T * íÉ # l ^ [*l/t L X ^ i i"o (R ! = 10 k ñ , R 2= 10 kQ) o AN1A4M t = J > V i ) S > ÿ i ) X î t m X è £ t o
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Ta-25
CycleS50
Transistor BC 227
TRANSISTOR BC 456
TRANSISTOR BC 413
AA1A4M
PA33
T108
transistor BC 247
TRANSISTOR BC 413 b
3ete
ATT 1177
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TCA160
Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;
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AC187
BC157
BC158
BC159
BC186
BC187
BD201
BD202
BD203
BD204
TCA160
BY164
Mullard C296
TAA310A
TAA435
TAA700
TBA550
TBA480
PCC88
TAA300
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NKT677
Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers
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AC113
AC155
AC156
AC165
AC128
AC154
AC166
AC167
AC177
AD140
NKT677
NKT612
ORP12
sft353
GEX34
1/equivalent transistor ac127
OC171 equivalent
AD149
NKT275
ac128
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Germanium drift transistor
Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of
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orporation/464
CH-8105
Germanium drift transistor
2N4895
germanium transistor
epitaxial mesa
transistor sec tip31A
halbleiter index transistor
transistor BD222
BD699 EQUIVALENT
kd 2060 transistor
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN4822A Thick Film Hybrid 1C _ STK400-290 IsaH yo I AF Power Amplifier Split Power Supply (50W + 50W + 50W min, THD = 0.08%) Package Dimensions Overview N ow , thick-film audio pow er am plifier ICs are available
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EN4822A
STK400-290
STK400-290]
40cIB
40riR
i20i2*
J32i36S
0GE113T
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2n5339
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 13E D | L3L7254 0084542 1 | 2N5336 thru 2N5339 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MEDIUM-POWER NPN SILICON TRANSISTORS 5 AM PERE POWER TRANSISTORS NPN SILICON . . . designed for switching and wide band amplifiar applications. • Low Collector-Emitter Saturation Voltage —
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L3L7254
O-205AD
2N6190
2N6193
2N5336
2N5337
2N5336
2N5339
2n5339
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stk*470 090
Abstract: stk 490 070 4822a stk 490 040 stk*0460 Sanyo STK 098 stk 490 -110 STK 290 010 stk 490 110 stk*401-130
Text: Ordering number : EN4022A Thick Film Hybrid 1C STK400-290 No. 4822A AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) I Package Dimensions Overview Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be
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EN4022A
STK400-290
4086ility
stk*470 090
stk 490 070
4822a
stk 490 040
stk*0460
Sanyo STK 098
stk 490 -110
STK 290 010
stk 490 110
stk*401-130
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LT 5337
Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338
Text: MOTOROL A SC XSTR S/ R F 1 3 E D I b3b?254 0004542 1 | 2N5336 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5339 MEDIUM-POWER NPN SILICO N TRAN SISTO RS 5 AM PERE POWER TRAN SISTORS NPN SILICO N . . . designed for switching and wide band amplifier applications.
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2N5336
2N5339
2N6190
2N6193
LT 5337
2N5339
2N6193, Motorola
LN 7904
2n5337
2n5338
NS338
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V5592
Abstract: TOP-66 5598 transistor 8617 diode DIN 53505 marking code to3 diode marking J5P SOT TO-126 mounting V7387 8630F
Text: ASSMANN Die-cast-Heatsinks Electronic C om ponen ts Thermal Conductive Ceramic Pads Technical data Applications: Electro- and electronic-industry i. e. computers, TV sets, VTR, medical equipment, measuring instruments, motor car- and machineindustry, photovoltanie, aviation.
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