Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR C 3906 Search Results

    TRANSISTOR C 3906 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 3906 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c 3906

    Abstract: 3906 TRANSISTOR npn transistor 3906 3906 pnp 3906 1N916 VPS05163 transistor pnp 3906
    Text: PZT 3906 PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA 4 • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN 3 2 1 Type Marking PZT 3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C


    Original     		PDF 100mA VPS05163 OT-223 EHP00714 EHP00302 EHP00715 Oct-13-1999 transistor c 3906 3906 TRANSISTOR npn transistor 3906 3906 pnp 3906 1N916 VPS05163 transistor pnp 3906

    Untitled

    Abstract: No abstract text available
    Text: PZT3906 PNP Silicon Switching Transistor  High DC current gain: 0.1mA to 100mA 4  Low collector-emitter saturation voltage  Complementary type: PZT3904 NPN 3 2 1 Type Marking PZT3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings


    Original     		PDF PZT3906 100mA PZT3904 VPS05163 OT223 Nov-30-2001 EHP00714 EHP00302 EHP00715

    3904

    Abstract: transistor 3904 npn 3904 TRANSISTOR PNP 3904 Transistor B 3904 transistor 3904 npn datasheet 1N916 VPS05163 3906 PNP
    Text: PZT 3904 NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA 4 • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP 3 2 1 Type Marking PZT 3904 ZT 3904 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C


    Original     		PDF 100mA VPS05163 OT-223 soEHP00710 EHP00711 EHP00293 EHP00712 Oct-13-1999 3904 transistor 3904 npn 3904 TRANSISTOR PNP 3904 Transistor B 3904 transistor 3904 npn datasheet 1N916 VPS05163 3906 PNP

    3906 TRANSISTOR npn

    Abstract: 1N916 PZT3904 PZT3906 VPS05163
    Text: PZT3906 PNP Silicon Switching Transistor  High DC current gain: 0.1mA to 100mA 4  Low collector-emitter saturation voltage  Complementary type: PZT3904 NPN 3 2 1 Type Marking PZT3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings


    Original     		PDF PZT3906 100mA PZT3904 VPS05163 OT223 EHP00302 EHP00715 Aug-20-2001 3906 TRANSISTOR npn 1N916 PZT3904 PZT3906 VPS05163

    npn3904

    Abstract: NPN-3904 pnp3906 3906 PNP MMDT3946 3904 TRANSISTOR npn sot transistor 3906
    Text: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. FEATURE SOT-363 Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching


    Original     		PDF MMDT3946 OT-363 3904-Type 3906-Type PNP3906 NPN3904 -10mA, 14-Apr-2010 npn3904 NPN-3904 pnp3906 3906 PNP MMDT3946 3904 TRANSISTOR npn sot transistor 3906

    3906

    Abstract: 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906
    Text: PNP Silicon Switching Transistor SXT 3906 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


    Original     		PDF Q68000-A8397 OT-89 3906 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906

    3904

    Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
    Text: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF 100mA VPS05161 OT-23 Oct-14-1999 EHP00763 EHP00764 EHP00757 EHP00758 3904 "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23

    MMDT3946

    Abstract: No abstract text available
    Text: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. SOT-363 FEATURE A E Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching


    Original     		PDF MMDT3946 OT-363 3904-Type 3906-Type 15-Jun-2012 MMDT3946

    spice 3906

    Abstract: No abstract text available
    Text: SPICE MODELS: MMDT3946 MMDT3946 Lead-free COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair A One 3904-Type NPN, One 3906-Type PNP C2 SOT-363 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching


    Original     		PDF MMDT3946 3904-Type 3906-Type OT-363 J-STD-020C MIL-STD-202, DS30123 spice 3906

    3906

    Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
    Text: SMBT 3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF 100mA VPS05161 OT-23 EHP00772 EHP00773 Oct-14-1999 EHP00768 EHP00769 3906 transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODELS: MMDT3946 MMDT3946 Lead-free COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair A One 3904-Type NPN, One 3906-Type PNP C2 B1 SOT-363 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching


    Original     		PDF MMDT3946 3904-Type 3906-Type OT-363 J-STD-020C MIL-STD-202, DS30123

    NPN 3904

    Abstract: spice 3906 MMDT3946
    Text: SPICE MODELS: MMDT3946 MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · · Complementary Pair A One 3904-Type NPN, One 3906-Type PNP C2 · · · · · · · SOT-363 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching


    Original     		PDF MMDT3946 3904-Type 3906-Type OT-363 J-STD-020C MIL-STD-22 PNP-3906) NPN 3904 spice 3906 MMDT3946

    2N3906

    Abstract: 2n3905 tr 2n3906 transistor 2N3905 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor
    Text: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Cotlector-Em itter Voltage: V c e o “ 4 0 V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA- 2 5 t ) C haracteristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N3905/3906 625mW 2N3905 2N3906 2N3900MHz -10mA tr 2n3906 transistor 2N3905 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor

    2N3906

    Abstract: transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906
    Text: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage C ollector-Emitter Vbltage


    OCR Scan     		PDF 2N3905/3906 625mW 2N3906 Widths300 -30-SO DD2S024 transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    3906

    Abstract: sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High D C current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SM B T 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP0Q77Q 3906 sot transistor 3906 transistor 3906 BT3904 transistor pnp 3906 3904 SOT SAW MARKING CODE SOT-23 transistor 3906 SOT23

    3906

    Abstract: marking 2A transistor 3906 transistor marking code 7C
    Text: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


    OCR Scan     		PDF Q68000-A8397 OT-89 3906 marking 2A transistor 3906 transistor marking code 7C

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin ( tonfigu ration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


    OCR Scan     		PDF Q68000-A8397 OT-89 0535bQ5 01EBb3D EHP00916 235bD5 D122b31 23SLD5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)


    OCR Scan     		PDF 3904S 3906S VPS05604 EHA07178 Q62702-A1201 OT-363 EHP00756

    C3906K

    Abstract: C4102
    Text: 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K Transistors I High-voltage Amplifier Transistor —120V, —50mA 2SA1579 / 2SA1514K + 0 A bsolute m axim um ratings ( 7 8 = 2 5 * 0 ) F e a tu r e s 1 ) High breakdown voltage. ( V c e o = — 120V) 2 ) C om plem ents the 2S C4102/2S C3906K.


    OCR Scan     		PDF 2SA1579 2SA1514K 2SC4102 2SC3906K --120V, --50mA) 2SA1514K C4102/2S C3906K C4102

    Untitled

    Abstract: No abstract text available
    Text: 3SE D m Ô23fc.320 0 0 1 7 2 3 Ì NPN Silicon Switching Transistor SIEM ENS/ • • • SPCL-, 3 BISIP SMBT 3904 SEM ICO N D S _ High D C current gain: 0.1 to 100 mA Low collector-emltter saturation voltage Complementary type: S M B T 3906 PNP


    OCR Scan     		PDF Q68000-A4340 Q68000-A4416 SmA10' SMBT3904 001753b T-35-11

    transistor 5bw

    Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
    Text: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>


    OCR Scan     		PDF 2SK67 2SK160 transistor 5bw TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave

    2N4401 die

    Abstract: dtc 22k 47k rohm "digital transistor" sst 2222A EQUIVALENT transistor digital 47k 22k PNP NPN TR 3906 PNP SM DTA214Y transistor digital 4.7k 4.7k PNP dta eel -16 sl 5510-1
    Text: Digital Transistors M APPLICATION: • Inverter , Driver & Interface C ircuits • FEATURES: • • • • Replaces up to three parts 1 transistor & 2 resistors w ith one part Available in a variety o f surface m ount or leaded (th ru -h o le ) packages


    OCR Scan     		PDF 100mA 2N4401 die dtc 22k 47k rohm "digital transistor" sst 2222A EQUIVALENT transistor digital 47k 22k PNP NPN TR 3906 PNP SM DTA214Y transistor digital 4.7k 4.7k PNP dta eel -16 sl 5510-1

    BT 815 transistor

    Abstract: BT 816 transistor
    Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code


    OCR Scan     		PDF 0017S3? SMBT3906 Q68000-A4341 Q68000-A4417 23b320 BT 815 transistor BT 816 transistor