DE275X2-501N16A
Abstract: No abstract text available
Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in
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DE275X2-501N16A
DE275X2-501N16A
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Untitled
Abstract: No abstract text available
Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-501N16A
DE275X2-501N16A
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DE275X2-501N16A
Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-501N16A
DE275X2-501N16A
"RF MOSFETs"
RF POWER MOSFET
275X2-501N16A
DE275X2
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220v ac to 12V 10A SMPS
Abstract: smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps
Text: Switch Mode Power Supplies Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Battery Charger and Adapter Front End Inrush PFC * Flyback Pout > 70W STBRXXX Bridge + + AC Post Regulation * TSM10x PWM + CV & CC
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TSM10x
TSM101
TSM102
TSM103
TSM104
PowerSO-10,
Max220,
Max247,
ISOWATT220,
220v ac to 12V 10A SMPS
smps 1000W
48V SMPS 1000w
smps 500w half bridge
220v ac to 12V 20A SMPS
TL431 928
smps 2000W
VIPer smps 20w 12V
flyback 1000w
500w half bridge smps
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nec 2501
Abstract: nec 2501 optocoupler 2501 optocoupler nec 2701 optocoupler 2501 2701 optocoupler NEC-2701 optocoupler 2501 dip 2501 NEC nec optocoupler
Text: California Eastern Laboratories Optocouplers Selection Guide NUMBERING SYSTEM All devices are available in lead free versions P S X X X X X — X — X — X— X Lead Finish None = Standard Finish A = Lead (Pb) Free Finish Identification number CTR Rank
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PS28XX-1-F3
PS28XX-4-F3
PS2801-1-F3*
PS2801-4-F3
PS28XX-4
nec 2501
nec 2501 optocoupler
2501 optocoupler
nec 2701
optocoupler 2501
2701 optocoupler
NEC-2701
optocoupler 2501 dip
2501 NEC
nec optocoupler
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p421 coupler
Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety
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TLP227GA
TLP227G
TLP227GA
TLP227G/TLP597GA/TLP227GA-2
p421 coupler
MOC604A
CNY17-3Z
TLP250 MOSFET DRIVER application note
TLP250 MOSFET DRIVER
p421 Photocoupler
CNY17-2Z
TRANSISTOR AC125
TLP181 SMD 11-4C1 TYPE
moc3041 application note
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSA1370 CRT DISPLAY, VIDEO OUTPUT • High Voltage • Low Reverse Transfer Capacitance : CRE=1.7pF ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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KSA1370
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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transistor BV-1 501
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC1395 TV VHF TUNER OSCILLATOR • High Current-Gain Bandwidth Product fT=600MHz Min • Output Capacitance Cob=1.5pF (Max) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Sym bol Rating Unit VcBO VcEO V ebo ic Pc Tj
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KSC1395
600MHz
Q02U7MQ
transistor BV-1 501
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DTA144GKA
Abstract: inverter ic marking H.A
Text: DTA144GE DTA144GUA DTA144GKA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm • available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA144GE, DTA144GUA, and DTA144GKA; K16 DTA144GE (EMT3) •
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DTA144GE
DTA144GUA
DTA144GKA
SC-70)
SC-59)
DTA144GE,
DTA144GUA,
DTA144GKA;
DTA144GE
DTA144GUA
inverter ic marking H.A
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BV 1 501
Abstract: BV 501 transistor BV-1 501
Text: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VcEtf'SOOV • Colleclor Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25t) Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2N6516
625mW
2N6515
lc-10mA,
100mA,
300iE
BV 1 501
BV 501
transistor BV-1 501
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Untitled
Abstract: No abstract text available
Text: S A M SUNG SEMICONDUCTOR INC ' MMESAÖ11C8 «E O | Vil.Ml« 0 0 0 7 2 3 1 î | PHP EPITAXIAL SILICON TRANSISTOR T - a s - a DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Em itter Voltage
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OT-23
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MCA255
Abstract: C1894 C2090 MCA230 MCA231 Quality Technologies optocouplers
Text: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 PACKAGE db dh .Æ DESCRIPTION r- 6.86 6.3S o The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington
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ri-78TYP
C2090
C2084
MCA230
MCA231
MCA255
MCA230,
MCA230/255
C1894
Quality Technologies optocouplers
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2SB1181
Abstract: 2SB1241 2SB1260 2SD1898
Text: 2SB1260 / 2SB1181 /2SB1241 Transistors Power Transistor -80V, -1 A 2SB1260 / 2SB118112SB1241 •External dimensions (Units : mm) •Features 1) High breakdown voltage and high current. B V ceo = -8 0 V , lc = -1 A 2) Good hFE linearity. 3 ) LOW VcE(sat).
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2SB1260
2SB1181
/2SB1241
2SB1260/2SB1181
2SD1898
2SD186312SD1733.
2SB1260
2SB1181
SC-62
2SB1241
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ScansU9X27
Abstract: No abstract text available
Text: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)
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2SB1260/2SB1181/2SB1241
2SD1898/
2SD1863/2SD1733.
2SB1260
2SB1241,
2SB1181
ScansU9X27
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MCA2255Z
Abstract: MCA2231Z MCA2230Z
Text: QUALITY TECHNOLOGIES VDE APPROVED 1 p h o t o d a r lin g t o n o p t o c o u p l e r s MCA2230Z MCA2231Z MCA2255Z tz z f DESCRIPTION 1 6.86 6.35 The MCA2230, MCA2231 and MCA2255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington
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MCA2230Z
MCA2231Z
MCA2255Z
MCA2230,
MCA2231
MCA2255
MCA2230
MCA2231,
MCA2255
C2090
MCA2255Z
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Untitled
Abstract: No abstract text available
Text: Transistors General Purpose Transistor Isolated Dual Transistors IMZ4 • F e a tu re s 1) B o th • E x te rn a l dim en sio n s (U n its: mm) 2SA 1036K c h ip an d 2 S C 4 1 1K ch ip in a SM T p ackag e. 2.9±0.2 1.9±0.2 2 ) M ounting p o ssib le w ith SM T3 au
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1036K
SC-74
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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Untitled
Abstract: No abstract text available
Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1
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2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F
2SD1898
1260/2S
2SB1181.
SC-62
2SD1768S
2SD1733
2SD1863)
2SD1898)
2SD1381F)
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transistor tt 2222
Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
Text: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power
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BLW29
BFQ42
bb531Bl
7Z77586
7Z77587
transistor tt 2222
9 BJE 53
mj 1504 transistor
mj 1504
BLW29
tt 2222
transistor l5
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T108
Abstract: T109
Text: IMZ3A h -7 > v Z ^ /T ra n s is to rs I M 7 ^ A IIV Ifc O # % T M V U - X 7 K U - ^ î K t / W ^ Isolated Mini-Mold Device —S x 'h Îi^ -ü 'M /G e n e ra l Small Signal Amp. Dimensions Unit : mm t 1) SMT (SC-59) t H —fiflllC PNP N PN<D2<B<7) h 2) g  fr 'n J
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IM71A
SC-59)
SC-74.
T108
T109
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transistor pnp a111
Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E
Text: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~| packages and lead coding features
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bSD113D
O-126
O-220
O-126
O-220
hSD113D
NB021EY
NB211YY
NR001E
NA41U
transistor pnp a111
NA41U
TO-126 ON
150 watt hf transistor 12 volt
PJO 390 CM
NA42
NA42U
NB021EY
NB211YY
NR001E
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A854S
Abstract: No abstract text available
Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S • F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) Large lc. Icmbx, — —500mA 2SA1577 2SA1036K 2) Low VcEisat). O p tim a l fo r lo w -v o ltage operation. 3) Com plem ents the 2SC 2411K/
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2SA1036K/2SA1577/2SA854S
2SA1036K
2SA1577
--500mA
2411K/
2SC1741S/2SC4097.
SC-59
SC-70
A854S
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d1189f
Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
Text: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)
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2SB1188
2SB1182
2SB1188)
2SB1182)
2SB891)
2SB1188/2SB1182/2SB1240/2SB891F/
2SB822/2SB1277/2SB911M
2SB891
d1189f
2SB891
d1758
2SB891F
2sb1188
2sb1277
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MMBT5086
Abstract: TRANSISTOR 501 sot23 marking 501
Text: INC ' SAMSUNG SEMICONDUCTOR M M E S A Ö 1 1C8 «E | T i l l i n g 00 07 2 3 1 T | O PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Emitter Voltage
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71MI142
MMBT5086
OT-23
100mA,
10fiA,
100MHz
TRANSISTOR 501
sot23 marking 501
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