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    TRANSISTOR BUT 33 Search Results

    TRANSISTOR BUT 33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUT 33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can


    Original     		PDF SGA-8543Z SGA-8543Z EDS-102583

    J119 transistor

    Abstract: bipolar transistor ghz s-parameter 140C SGA-8543Z SiGe POWER TRANSISTOR
    Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be


    Original     		PDF SGA-8543Z SGA-8543Z EDS-102583 J119 transistor bipolar transistor ghz s-parameter 140C SiGe POWER TRANSISTOR

    simplest flyback converter

    Abstract: PB2134 isolated flyback converter with optocoupler optocoupler based isolated dc to dc converter LT1725 LTC4257-1 2N7002 B0540W BAS21LT1 MMBT3904
    Text: advertisement Power over Ethernet Isolated Power Supply Delivers 11.5W at 90% Efficiency – Design Note 338 Jesus Rosales switches to turn on and off the better. A push-pull converter could be used, but the additional complexity is not justified at this power level. A single transistor forward


    Original     		PDF DN338 LT1725 dn338f simplest flyback converter PB2134 isolated flyback converter with optocoupler optocoupler based isolated dc to dc converter LT1725 LTC4257-1 2N7002 B0540W BAS21LT1 MMBT3904

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    8543

    Abstract: 2.4 ghz passive rfid Z1 SOT343 EDS-102583
    Text: Advanced Information Product Description Sirenza Microdevices’ SGA-8543 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides low


    Original     		PDF SGA-8543 SGA-8543 8543 2.4 ghz passive rfid Z1 SOT343 EDS-102583

    2n2222 transistor pin b c e

    Abstract: by205 2n2222 h parameter values BUT11
    Text: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 5 A Continuous Collector Current This series is currently available, but not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.


    Original     		PDF BUT11 O-220 SAP791AB 2n2222 transistor pin b c e by205 2n2222 h parameter values

    Untitled

    Abstract: No abstract text available
    Text: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 5 A Continuous Collector Current This series is currently available, but not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.


    Original     		PDF BUT11 O-220 SAP791AB

    ic mm74hc

    Abstract: triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC
    Text: Fairchild Semiconductor Application Note 339 November 1987 INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies. The latch-up mechanism, once triggered, turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC


    Original     		PDF MM54HC/MM74HC ic mm74hc triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC

    pass transistor

    Abstract: transistor D3 5v power transistor AN3333 APP3333 MAX5024 TIP32B Vbe 40 transistor linear regulator 48V linear regulator application
    Text: Maxim/Dallas > App Notes > AUTOMOTIVE POWER-SUPPLY CIRCUITS Keywords: linear regulators, pass transistors Aug 30, 2004 APPLICATION NOTE 3333 Pass Transistor Enhances Regulator's Output Current A 5V linear regulator with external pass transistor which provides an additional, parallel path for load current


    Original     		PDF 150mA 300mA) 300mA. com/an3333 MAX5024: AN3333, APP3333, Appnote3333, pass transistor transistor D3 5v power transistor AN3333 APP3333 MAX5024 TIP32B Vbe 40 transistor linear regulator 48V linear regulator application

    Untitled

    Abstract: No abstract text available
    Text: EE 330 Spring 2014 Laboratory 8: Semiconductor Parameter Measurements Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for devices. A second objective is to


    Original     		PDF 2N4400 Q4015L5 Q4010LS2

    STRAIN GAUGE

    Abstract: an3396 wheatstone bridge pressure sensor Wheatstone Bridge signal conditioning ICS for strain gauge full bridge strain gauge pressure sensor strain sensor strain gauge sensor bdr boost full bridge strain gage pressure sensor
    Text: Maxim > App Notes > SENSOR SIGNAL CONDITIONERS Keywords: Sensor, sensor signal conditioning, sensor conditioner, strain gauge, sensor compensation, strain gauge compensation, pressure sensor calibration, pressure sensor compensation Nov 11, 2004 APPLICATION NOTE 3396


    Original     		PDF com/an3396 MAX1452: MAX1455: AN3396, APP3396, Appnote3396, STRAIN GAUGE an3396 wheatstone bridge pressure sensor Wheatstone Bridge signal conditioning ICS for strain gauge full bridge strain gauge pressure sensor strain sensor strain gauge sensor bdr boost full bridge strain gage pressure sensor

    TRANSISTOR P84

    Abstract: AVAL DATA PKW 1100 prom Programmers p83 transistor aval pkw 1100 AVAL DATA PKW 1100 transistor p86 transistor p35 transistor p87 AN32045 1TA252E00
    Text: Ordering number: EN 5632 LC86E5032 CMOS LSI LC86E5032 8-Bit Single-Chip Microcontroller Preliminary Overview Package Dimensions unit : mm 3126-DIC64S [LC86E5032] 64 33 1 32 19.05 58.0 1.27 0.9 0.46 1.778 3.4min 5.8max 0.25 18.8 The LC86E5032 microcontroller, a new addition to the


    Original     		PDF LC86E5032 3126-DIC64S LC86E5032] LC86E5032 LC865000 32Kbyte DIC64S 3194-QFC64E TRANSISTOR P84 AVAL DATA PKW 1100 prom Programmers p83 transistor aval pkw 1100 AVAL DATA PKW 1100 transistor p86 transistor p35 transistor p87 AN32045 1TA252E00

    spice model three phase TRANSFORMER

    Abstract: Spice model xfmr xfmr spice alimentation decoupage spice model 1n4148 Christophe Basso SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG three winding transformer MTD1N60E MUR1100E
    Text: MOTOROLA Order this document by AN1679/D SEMICONDUCTOR APPLICATION NOTE AN1679 How to deal with Leakage Elements in FLYBACK Converters Christophe BASSO, MOTOROLA SPS BP–1029, Le Mirail, 31023 Toulouse France e–mail: R38010@email.sps.mot.com; Tel.: 33 5 61 19 90 12


    Original     		PDF AN1679/D AN1679 R38010 spice model three phase TRANSFORMER Spice model xfmr xfmr spice alimentation decoupage spice model 1n4148 Christophe Basso SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG three winding transformer MTD1N60E MUR1100E

    calculation of IGBT snubber

    Abstract: Snubber circuits theory, design and application 1 Snubber circuits theory, design and application calculation of diode snubber tranzorb diode igbt types IGBT snubber for inductive load APT0404 TRANZORB Snubber circuits theory
    Text: Application Note APT0404 December 2004 Turn-Off Snubber Design for High Frequency Modules Serge Bontemps R & D Manager Advanced Power Technology Europe, Chemin de Magret, 33700, Merignac, France Turn-off snubbers are passive circuits made of diodes, resistors and capacitors dedicated to


    Original     		PDF APT0404 APTGF300A120 calculation of IGBT snubber Snubber circuits theory, design and application 1 Snubber circuits theory, design and application calculation of diode snubber tranzorb diode igbt types IGBT snubber for inductive load APT0404 TRANZORB Snubber circuits theory

    spice model three phase TRANSFORMER

    Abstract: three-winding transformer SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG 3 phase to d-q transformation spice offline switchmode -flyback spice model mesh TRANSFORMER 1N4937 pspice spice model of power TRANSFORMER AN1679 xfmr spice
    Text: AN1679/D How to deal with Leakage Elements in Flyback Converters http://onsemi.com Prepared by: Christophe Basso ON Semiconductor 14, rue Paul Mesplé – BP1112 – 31035 TOULOUSE Cedex 1, France 33 0 5 34 61 11 54 e–mail: [email protected] INTRODUCTION


    Original     		PDF AN1679/D BP1112 r14525 spice model three phase TRANSFORMER three-winding transformer SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG 3 phase to d-q transformation spice offline switchmode -flyback spice model mesh TRANSFORMER 1N4937 pspice spice model of power TRANSFORMER AN1679 xfmr spice

    spice model three phase TRANSFORMER

    Abstract: AN1679 Christophe Basso three-winding transformer Spice model xfmr spice model mesh TRANSFORMER SEM500 spice model of power TRANSFORMER Severns spice model 1n4148
    Text: AN1679/D How to deal with Leakage Elements in Flyback Converters http://onsemi.com Prepared by: Christophe Basso ON Semiconductor 14, rue Paul Mesplé – BP1112 – 31035 TOULOUSE Cedex 1, France 33 0 5 34 61 11 54 e–mail: [email protected] INTRODUCTION


    Original     		PDF AN1679/D BP1112 r14525 spice model three phase TRANSFORMER AN1679 Christophe Basso three-winding transformer Spice model xfmr spice model mesh TRANSFORMER SEM500 spice model of power TRANSFORMER Severns spice model 1n4148

    UC3842 SMD

    Abstract: smd transistor 5k PAE18K110Y1 flyback transformer design uc3842 uc3842 application 600V SMD Transistor 30w flyback uc3842 power supply universal power supply with uc3842 DIODE SMD 1206 philips make UC3842 step up converter
    Text: PREMO S.A. Subject Universal 30W Power Supply, isolated, single output 12V/2.5 A Application Objective Industrial Applications Document ID NA-11 Date June 9th, 2004 Revision 1 PREMO S.A. Conxita Supervia 13, Barcelona (Spain) Tel: +34 93 409 89 80 Fax.: +34 93 330 75 02


    Original     		PDF NA-11 UC3842 SMD smd transistor 5k PAE18K110Y1 flyback transformer design uc3842 uc3842 application 600V SMD Transistor 30w flyback uc3842 power supply universal power supply with uc3842 DIODE SMD 1206 philips make UC3842 step up converter

    730A-04

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL C8A ®®®® 8ETI 8EMK0 DEMKO NEMKO BUT GlobalOptobolator 6-Pin DIP Optoisolators High Voltage Transistor Output 400 Volts [CTR • 20% Min] [CTR « 10% Min] [CTR ■ S% Min] ‘ Motorola Preferred Device


    OCR Scan     		PDF MOC8204, MOC8205 MOC8204* MOC8206 MOC82Q4 MQC8206 730A-04

    AEG T 25 N 1000

    Abstract: ps2ms QS 100 NPN Transistor S100 NPN Transistor BYV16 MS 3894 N BUT54
    Text: A E G CORP 17E D QQSTMSta OGQTSSl Q BUT 54 electronic r - 33-13 C^atN«Tech«j*os'es Silicon NPN Power Transistor A p p lic a tio n : Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique Short sw itching tim e • Glass passivation


    OCR Scan     		PDF QG2T42b T-33-13 AEG T 25 N 1000 ps2ms QS 100 NPN Transistor S100 NPN Transistor BYV16 MS 3894 N BUT54

    BUT93

    Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11
    Text: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e


    OCR Scan     		PDF r-23-il 0G2142b T-33-11 BUT93 BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11

    transistor Bc 542

    Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
    Text: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times


    OCR Scan     		PDF 33-r2 a75ttti DIN41 T0126 15A3DIN transistor Bc 542 transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A

    3772 stepper

    Abstract: CL-21 capacitor LM 3771 GOQ1744 PBL3772 pbl 3960 hh2 ericsson 000174D
    Text: ERICSSON COMPONENTS INC ERICSSON ILE 1 M 3373t80 0001740 2 • ^ September 1989 _ _ _T - M Z - I 3 - Z Ì PBL 3772 Dual Stepper Motor Driver Preliminary Data) Description Key Features The PBL 3772 is a switch-mode (chopper), constant-current driver IC with two chan­


    OCR Scan     		PDF 3373bfl0 000174D T-41-13-ZS PBL3772 S-164 3772 stepper CL-21 capacitor LM 3771 GOQ1744 pbl 3960 hh2 ericsson

    4229P-L00-3C8

    Abstract: 20A400 MJ12005D POT CORE 4229P-L00 Ferrox EC52-3C8
    Text: MOTOROLA SC XST R S/ R F ME D I t3b75sq 0 0850 17 0 | ^ 33-/3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e sig n o rw D ata Sheet 8.0 AMPERE NPN SILICON POWER TRANSISTORS NPN HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAMPER DIODE 1500 VOLTS 100 WATTS . . . specifically designed for use in large-screen color-deflection


    OCR Scan     		PDF t3b75sq MJ12005D C01LECT0 4229P-L00-3C8 20A400 MJ12005D POT CORE 4229P-L00 Ferrox EC52-3C8

    S 170 MOSFET TRANSISTOR

    Abstract: 4-869 diode AN569 MTP33N10E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP33N10E TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 33 AMPERES 100 VOLTS RDS on = °-06 OHM


    OCR Scan     		PDF MTP33N10E 0E-05 0E-04 0E-03 0E-02 0E-01 S 170 MOSFET TRANSISTOR 4-869 diode AN569