TRANSISTOR BR D882 Search Results

TRANSISTOR BR D882 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BR D882 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40	Original	PDF	O-126 O-126 100mA 10MHz
D882 Abstract: transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR（NPN） TO—251 FEATURES 1.BASE Power dissipation PCM : 1.25W（Tamb=25℃） Collector current ICM: 3A Collector-base voltage V BR CBO : 40V Operating and storage junction temperature range	Original	PDF	O-251 O--251 25WTamb Co200 091TYP 300TYP D882 transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882
D882 TRANSISTOR Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range	Original	PDF	100mA 10MHz D882 TRANSISTOR
D882 TRANSISTOR Abstract: transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range	Original	PDF	O-126 O--126 Coll00 290TYP 090TYP D882 TRANSISTOR transistor D882 datasheet D882 p br d882 D882 br d882 p transistor "D882 p" TRANSISTOR D882 TRANSISTOR br D882 7400
D882 TRANSISTOR Abstract: D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 D882 to 92 D882 TO-92 d882 npn transistor transistor D882 datasheet D882 -TO-92 Text: D882 D882 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25℃) 3. BASE Collector current ICM: 3 A Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	PDF	100mA 10MHz D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 D882 to 92 D882 TO-92 d882 npn transistor transistor D882 datasheet D882 -TO-92
TRANSISTOR D882 input Abstract: D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet Text: D882 SOT-89 Plastic-Encapsulate Transistors Transistor NPN FEATURES D Power dissipation A 4 o µ¥Î» £ºmm P CM :1.25 W (Tamb=25 C) E HE •û ºÅ Collector current Marking V (BR)CBO :40 V 3 b1 2 C 1.BASE min ·û ºÅ 1.5 3 0.65 e1 0.65 HE 1.6 max 4.25	Original	PDF	OT-89 OT-89 TRANSISTOR D882 input D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet
D882 TRANSISTOR Abstract: TRANSISTOR br D882 D882 TRANSISTOR D882 br d882 d882 npn transistor NPN D882 transistor D882* transistor NPN TRANSISTOR D882 transistor Ic 1A NPN Text: D882 Transistor NPN 1. BASE TO-252-2L 2. COLLECTOR 3 .EMITTER Features Power dissipation Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage	Original	PDF	O-252-2L 10MHz D882 TRANSISTOR TRANSISTOR br D882 D882 TRANSISTOR D882 br d882 d882 npn transistor NPN D882 transistor D882* transistor NPN TRANSISTOR D882 transistor Ic 1A NPN
TRANSISTOR D882S Abstract: D882S d882* npn transistor d882s transistor npn transistor Ic 1A NPN Text: D882S Transistor NPN TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage	Original	PDF	D882S 10MHz TRANSISTOR D882S D882S d882* npn transistor d882s transistor npn transistor Ic 1A NPN
TRANSISTOR br D882 Abstract: D882 transistor D882 br d882 d882 power transistor d882 npn transistor d882 npn D882 TRANSISTOR d882* npn transistor NPN TRANSISTOR D882 Text: D882 NPN TO-251 Transistor TO-251 1. EMITTER 2. COLLECTOR 3．BASE 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage	Original	PDF	O-251 O-251 10MHz TRANSISTOR br D882 D882 transistor D882 br d882 d882 power transistor d882 npn transistor d882 npn D882 TRANSISTOR d882* npn transistor NPN TRANSISTOR D882
D882 sot Abstract: D882 sot89 sot 89 D882 TRANSISTOR br D882 NPN TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR D882 sot-89 D882 TRANSISTOR D882 Y sot-89 d882 Text: D882 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 Features B 2.6 4.25 2.4 3.75 0.8 MIN Power dissipation 0.44 0.37 0.13 B MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)	Original	PDF	OT-89 OT-89 100mA 10MHz D882 sot D882 sot89 sot 89 D882 TRANSISTOR br D882 NPN TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR D882 sot-89 D882 TRANSISTOR D882 Y sot-89 d882
d882 Abstract: TRANSISTOR br D882 br d882 to-126 transistor D882 d882 npn br d882 D882 TRANSISTOR TO-126 D882 d882 npn transistor d882 power transistor Text: D882 NPN TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 2. COLLECTOR 3.200 10.60 0 11.00 0 3. BASE 3 0.000 0.300 2 Features 1 2.100 2.300 Power dissipation 1.170 1.370 15.30 0 15.70 0 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	O-126 O-126 10MHz d882 TRANSISTOR br D882 br d882 to-126 transistor D882 d882 npn br d882 D882 TRANSISTOR TO-126 D882 d882 npn transistor d882 power transistor
D882S Abstract: TRANSISTOR D882S datasheet d882 Text: D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Power Dissipation G H J A CLASSIFICATION OF hFE REF. D A B C D E F G H J K B K Rank Range R Y GR	Original	PDF	D882S 08-Oct-2010 D882S TRANSISTOR D882S datasheet d882
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors D882 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 3 A ICM: Collector-base voltage	Original	PDF	OT-89 OT-89 100mA 10MHz
TRANSISTOR D882 Abstract: D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TO-251 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	O-251 O-251 10MHz TRANSISTOR D882 D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor

Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR NPN TO-92 1.EMITTER FEATURES Power dissipation 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO	Original	PDF	D882S 10MHz
D882S Abstract: TRANSISTOR D882S datasheet d882 D882 d882s transistor npn Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	D882S 10MHz D882S TRANSISTOR D882S datasheet d882 D882 d882s transistor npn
D882 TRANSISTOR Abstract: transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	O-126 O-126 10MHz D882 TRANSISTOR transistor D882 D882 transistor D882 datasheet br d882 to-126 TRANSISTOR br D882 br d882 d882 power transistor datasheet d882 NPN TRANSISTOR D882
D882 TRANSISTOR Abstract: d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 D882 TRANSISTOR NPN FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	O-252 O-252 10MHz D882 TRANSISTOR d882 to252 TO 252 D882 D882 TRANSISTOR br D882 TRANSISTOR D882 252 d882 transistor D882 to252 br d882 transistor D882 datasheet
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power Dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage	Original	PDF	O-126 O-126 10MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-251 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage	Original	PDF	O-251 O-251 10MHz
d882 to-92 Abstract: TRANSISTOR br D882 d882 y Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	PDF	100mA 10MHz d882 to-92 TRANSISTOR br D882 d882 y
D882 TRANSISTOR Abstract: D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89 1. BASE FEATURES 2. COLLECTOR Power dissipation 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	PDF	OT-89 100mA 10MHz D882 TRANSISTOR D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet
d882 to-92 Abstract: D882 -TO-92 D882 D882 TRANSISTOR transistor D882 D882 to 92 d882 china TRANSISTOR br D882 Br d882 NPN TRANSISTOR D882 Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units	Original	PDF	100mA 10MHz d882 to-92 D882 -TO-92 D882 D882 TRANSISTOR transistor D882 D882 to 92 d882 china TRANSISTOR br D882 Br d882 NPN TRANSISTOR D882
N E C D882 Abstract: br d882 p D882 TRANSISTOR TRANSISTOR D882 t p br d882 to-126 D882 tp P H D882 TRANSISTOR br D882 br d882 Text: M C C TO-126 P lastic-E n cap su late T r a n s is t o r s ^ D882 TRANSISTOR NPN FE A T UR E S Pow er d issip ation TO-126 Pcm : 1.25W (Tamb=25“C ) Collector current 1.E M I T T E R lew: 3 A 2.C O L L E C T O R Collector-base voltage V(BR)CBO; 40 V 3.B A S E	OCR Scan	PDF	O-126 O-126 N E C D882 br d882 p D882 TRANSISTOR TRANSISTOR D882 t p br d882 to-126 D882 tp P H D882 TRANSISTOR br D882 br d882

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TRANSISTOR BR D882 Search Results

TRANSISTOR BR D882 Result Highlights (5)

TRANSISTOR BR D882 Datasheets Context Search

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D882

D882 TRANSISTOR

D882 TRANSISTOR

D882 TRANSISTOR

TRANSISTOR D882 input

D882 TRANSISTOR

TRANSISTOR D882S

TRANSISTOR br D882

D882 sot

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D882S

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TRANSISTOR D882

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D882S

D882 TRANSISTOR

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d882 to-92

D882 TRANSISTOR

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N E C D882