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    TRANSISTOR BFR84 Search Results

    TRANSISTOR BFR84 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFR84 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR840L3RHESD BFR840L3RHESD:

    BFR840L3RHESD

    Abstract: Germanium Transistor LNA ku-band
    Text: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR840L3RHESD BFR840L3RHESD: BFR840L3RHESD Germanium Transistor LNA ku-band

    rf transistor frequency 10.0GHz gain 20 dB

    Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band
    Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR840L3RHESD BFR840L3RHESD: rf transistor frequency 10.0GHz gain 20 dB 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band

    Untitled

    Abstract: No abstract text available
    Text: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-06-04 RF & Protection Devices Edition 2014-06-04 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR843EL3 TSLP-3-10-PO TSLP-3-10-FP BFR843EL3: TSLP-3-10-TP

    Untitled

    Abstract: No abstract text available
    Text: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-07-04 RF & Protection Devices Edition 2014-07-04 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR843EL3 TSLP-3-10-PO TSLP-3-10-FP BFR843EL3: TSLP-3-10-TP

    LNA ku-band

    Abstract: No abstract text available
    Text: BFR840L3RHESD Robust ultra low noise SiGe:C Bipolar RF Transistor in very small thin package Data Sheet Revision 1.0, 2012-04-19 RF & Protection Devices Edition 2012-04-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG


    Original     		PDF BFR840L3RHESD BFR840L3RHESD: LNA ku-band

    Untitled

    Abstract: No abstract text available
    Text: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Target Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR843EL3 BFR843EL3:

    Untitled

    Abstract: No abstract text available
    Text: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-08-05 RF & Protection Devices Edition 2014-08-05 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.


    Original     		PDF BFR843EL3 TSLP-3-10-PO TSLP-3-10-FP BFR843EL3: TSLP-3-10-TP

    IC 741 OPAMP DATASHEET

    Abstract: datasheet opamp 741 enamelled copper wire swg table IC 741 based colpitts oscillator construction BFR84 BF981 FET BFR84 pin out 741 opamp pictures of lm358 pin configuration transistor BC547 2N2222
    Text: A 10 MHz Reference Oscillator Keith Gooley VK5OQ A quartz crystal oscillator in a temperature stabilised enclosure to be used as a reference for a counter or narrow-band mode receiver or transmitter at UHF/SHF The need for this reference arose in my shack when I was using a 1 GHz counter


    Original     		PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    BFR84

    Abstract: transistor bfr84
    Text: BFR84 _/ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m. tuners,


    OCR Scan     		PDF BFR84 titiS3T31 0035T11 BFR84 transistor bfr84

    bfr84

    Abstract: 71672 MSI MS-5 511 MOSFET
    Text: BFR84 J '-SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fieid-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m . tuners,


    OCR Scan     		PDF BFR84 bbS3131 7Z67774. bfr84 71672 MSI MS-5 511 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: BFR84 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a metal TO-72 envelope w ith source arid substrate connected to the case, intended for a wide range o f v.h.f. applications, such as v.h.f. telev s on tuners, f.m. tuners,


    OCR Scan     		PDF BFR84

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


    OCR Scan     		PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


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