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    TRANSISTOR BFR 450 Search Results

    TRANSISTOR BFR 450 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFR 450 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor BFR 96

    Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
    Text: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1


    Original     		PDF BFR92 BFR92R D-74025 Transistor BFR 96 Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic

    BFR92A

    Abstract: Transistor BFR 450 BFR 67 BFR 94 Transistor BFR 35 Transistor BFR 91 Transistor BFR 67 BFR92AR BFR 450 Transistor BFR 30
    Text: TELEFUNKEN Semiconductors BFR 92 A / BFR 92 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92A Marking Plastic case SOT 23


    Original     		PDF BFR92A BFR92AR D-74025 Transistor BFR 450 BFR 67 BFR 94 Transistor BFR 35 Transistor BFR 91 Transistor BFR 67 BFR 450 Transistor BFR 30

    Transistor BFR 90 application

    Abstract: BFR93A bfr 93 a Transistor BFR 93 BFR 93 BFR93AR Transistor BFR marking R2 BFR 30 transistor bfr93
    Text: TELEFUNKEN Semiconductors BFR 93 A / BFR 93 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 2 1 3 3 2 94 9280 BFR93A Marking: R2 Plastic case SOT 23


    Original     		PDF BFR93A BFR93AR D-74025 Transistor BFR 90 application bfr 93 a Transistor BFR 93 BFR 93 Transistor BFR marking R2 BFR 30 transistor bfr93

    Transistor BFR 30

    Abstract: silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 BFR93 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103
    Text: BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR93 Marking: R1


    Original     		PDF BFR93 BFR93R D-74025 Transistor BFR 30 silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103

    Untitled

    Abstract: No abstract text available
    Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR


    Original     		PDF NSM6056MT1G NSM6056M/D

    Marking M60

    Abstract: transistor 11
    Text: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR


    Original     		PDF NSM6056MT1G SC-74 NSM6056M/D Marking M60 transistor 11

    Transistor BFR

    Abstract: PZTA96ST1G
    Text: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO - 450 Vdc


    Original     		PDF PZTA96ST1G OT-223 O-261) PZTA96ST1/D Transistor BFR PZTA96ST1G

    sot 23 marking code 2t

    Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3G
    Text: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage


    Original     		PDF MMBT4403LT1G OT-23 O-236) MMBT4403LT1/D sot 23 marking code 2t MMBT4403LT1 MMBT4403LT1G MMBT4403LT3G

    MMBT4403LT1

    Abstract: MMBT4403LT1G MMBT4403LT3G
    Text: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage


    Original     		PDF MMBT4403LT1G MMBT4403LT1/D MMBT4403LT1 MMBT4403LT1G MMBT4403LT3G

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF MMBT4401L, SMMBT4401L MMBT4401LT1/D

    PZTA96ST1G

    Abstract: No abstract text available
    Text: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage


    Original     		PDF PZTA96ST1G OT-223 O-261) ZTA96G PZTA96ST1/D

    Untitled

    Abstract: No abstract text available
    Text: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage


    Original     		PDF PZTA96ST1G PZTA96ST1/D

    mmbt4401lt1g

    Abstract: MMBT4401LT1 MMBT4401LT3G
    Text: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original     		PDF MMBT4401LT1G OT-23 O-236) MMBT4401LT1/D mmbt4401lt1g MMBT4401LT1 MMBT4401LT3G

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3G
    Text: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original     		PDF MMBT4401LT1G MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3G

    Transistor BFR 38

    Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
    Text: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-23 Q62702-F1218 Dec-11-1996 Transistor BFR 38 Q62702-F1218 marking code ne sot 23 K 193 transistor

    Untitled

    Abstract: No abstract text available
    Text: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating COLLECTOR 2,4 Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage


    Original     		PDF PZTA96ST1G PZTA96ST1/D

    Transistor BFR 90

    Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
    Text: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		PDF 900MHz OT-323 Q62702-F1510 Dec-11-1996 Transistor BFR 90 F1510 Q62702-F1510 Transistor BFR 900mhz 193W

    wcs10

    Abstract: SMMBT4401LT1G
    Text: MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF MMBT4401L, SMMBT4401L AEC-Q101 OT-23 O-236) MMBT4401LT1/D wcs10 SMMBT4401LT1G

    BCW72LT1G

    Abstract: 1N916 MPS3904
    Text: BCW72LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage


    Original     		PDF BCW72LT1G BCW72LT1/D BCW72LT1G 1N916 MPS3904

    BFR 182 transistor

    Abstract: BFR 67 Transistor BFR 67
    Text: BFR 182 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: 182 Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter


    Original     		PDF D-74025 BFR 182 transistor BFR 67 Transistor BFR 67

    Transistor BFR 67

    Abstract: No abstract text available
    Text: BFR 183 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: RH Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter


    Original     		PDF D-74025 Transistor BFR 67

    Transistor BFR 35

    Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91
    Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package


    OCR Scan     		PDF fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 35 Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1316 OT-23 BFR183 900MHz

    marking GG

    Abstract: marking code 604 SOT23
    Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package


    OCR Scan     		PDF OT-23 marking GG marking code 604 SOT23