TRANSISTOR BD 141 Search Results

TRANSISTOR BD 141 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD 141 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IB1011M1000 Abstract: No abstract text available Text: Part Number: Integra IB1011M1000 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M1000 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under simple mode S pulse conditions	Original	PDF	IB1011M1000 IB1011M1000 IB1011M1000-REV-NC-DS-REV-NC
MMFT2N25E Abstract: 735 motorola make Text: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.	Original	PDF	MMFT2N25E/D MMFT2N25E TransistorMMFT2N25E/D MMFT2N25E 735 motorola make
transistor bd 370 Abstract: 30240 MMJT350T1 Text: ON Semiconductort MMJT350T1 Bipolar Power Transistors PNP Silicon 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 2.75 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring	Original	PDF	MMJT350T1 r14525 MMJT350T1/D transistor bd 370 30240 MMJT350T1
IL311ANM Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.	Original	PDF
BD 140 transistor Abstract: transistor BD 140 BD 139 140 BD139 h parameters BD NPN transistors BD139 power transistor bd139 transistor bd 138 BD 139 transistor BD135-D Text: ON Semiconductor BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	PDF	BD135/D r14525 BD 140 transistor transistor BD 140 BD 139 140 BD139 h parameters BD NPN transistors BD139 power transistor bd139 transistor bd 138 BD 139 transistor BD135-D
bd140 pin out Abstract: BD140 application circuits circuits TRANSISTOR BD140 BD140-10 BD 266 S BD 140 transistor bd 138 application circuit BD136 BD138 BD140 Text: ON Semiconductor BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS	Original	PDF	BD136 BD138 BD140 BD140-10 225AA r14525 BD136/D bd140 pin out BD140 application circuits circuits TRANSISTOR BD140 BD140-10 BD 266 S BD 140 transistor bd 138 application circuit BD136 BD138 BD140
BD140-10 Abstract: BD136 BD140 application circuits circuits of ic BD140 BD136-D BD138 BD140 bd138 hfe transistor bd 137 Text: ON Semiconductort BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS	Original	PDF	BD136/D r14525 BD140-10 BD136 BD140 application circuits circuits of ic BD140 BD136-D BD138 BD140 bd138 hfe transistor bd 137
TRANSISTOR BD 136 Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140 Text: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	PDF	BD135/D r14525 TRANSISTOR BD 136 BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140
transistor BD 141 Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	PDF	BD135, BD137, BD139 BD139 BD135 BD137 transistor BD 141 BD139G bd139 140 BD139-25 BD139 NPN transistor operation of BD 139 bd135 diagram
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD3135M120 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET  High Power Gain  Excellent thermal stability  Gold Metal Part number ILD3135M120 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous	Original	PDF	ILD3135M120 ILD3135M120 300us ILD3135M120-REV-NC-DS-REV-I
MMJT9435 Abstract: No abstract text available Text: ON Semiconductort MMJT9435 Bipolar Power Transistors ON Semiconductor Preferred Device PNP Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	PDF	MMJT9435 r14525 MMJT9435/D MMJT9435
MMJT9410 Abstract: power bjt Text: ON Semiconductort MMJT9410 Bipolar Power Transistors ON Semiconductor Preferred Device NPN Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	PDF	MMJT9410 r14525 MMJT9410/D MMJT9410 power bjt
ph 4148 zener diode Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS	Original	PDF	DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Keithley s900 Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285 Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.	Original	PDF	RT96-024 enviro1995, Keithley s900 n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285

S24 MSOP-8 Abstract: No abstract text available Text: LTC4260 Positive High Voltage Hot Swap Controller with I2C Compatible Monitoring Description Features n n n n n n n n n n Allows Safe Board Insertion into Live Backplane 8-Bit ADC Monitors Current and Voltage I2C /SMBus Interface Wide Operating Voltage Range: 8.5V to 80V	Original	PDF	LTC4260 4260fc com/LTC4260 S24 MSOP-8
microwave oscillator Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854 Text: NEC/ BD CALIFOR NIA OODOlET 3 \| 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n HIGH fS	OCR Scan	PDF	3/w23 NE568 200mW NE568 NE56855 NES6851 microwave oscillator transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE56854
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	PDF	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Transistor D 799 Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G \| MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	PDF	BD795 BD797 BD799 BD801 BD797 B0801 BD796 BD801 Transistor D 799 transistor BD 522 transistor motorola 114-8 TRANSISTOR bd 147 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E-FET High Energy Pow er FET N-Channel Enhancement-Mode Silicon Gate T h is a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.	OCR Scan	PDF	MMFT2N25E/D
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E-FET High Energy Power FET M MFT2N25E N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.	OCR Scan	PDF	MMFT2N25E/D MFT2N25E
Lautsprecher LP Abstract: transistor gt 322 service-mitteilungen AC188K ac187k schiebe funkschau STRALSUND MP20A SF225 Text: SERVICE-MITTEILUNGEN VEB IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N lE fe r a d io -television \ AUSGABE: Seite April 1-6 Aus der Sowjet-Union wird noch in diesem Jahr der TTEmpfänger " SIGNAL 601 " importiert. Es handelt sich um ein Gerät für den Empfang der Berei	OCR Scan	PDF
TRANSISTOR BC 137 Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815 Text: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded	OCR Scan	PDF	BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501 JC546-48 PS3704-3706 MPS3904 PS6513-6515 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	PDF	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF

TRANSISTOR BD 141 Search Results

TRANSISTOR BD 141 Result Highlights (5)

TRANSISTOR BD 141 Datasheets Context Search

IB1011M1000

MMFT2N25E

transistor bd 370

IL311ANM

BD 140 transistor

bd140 pin out

BD140-10

TRANSISTOR BD 136

transistor BD 141

Untitled

MMJT9435

MMJT9410

ph 4148 zener diode

Keithley s900

S24 MSOP-8

microwave oscillator

bc 540

Transistor D 799

Untitled

Untitled

Lautsprecher LP

TRANSISTOR BC 137

D 5038 Transistor Horizontal

2sb504