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    TRANSISTOR BC337 40 Search Results

    TRANSISTOR BC337 40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC337 40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC337

    Abstract: TRANSISTOR BC337-25 bc337 transistor datasheet BC338 BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16
    Text: BC337/338 BC337,-16,-25,-40 TRANSISTOR NPN BC338, -16,-25,-40 FEATURES Power dissipation TO-92 PCM: 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range


    Original     		PDF BC337/338 BC337 BC338, BC338 BC337 BC338 TRANSISTOR BC337-25 bc337 transistor datasheet BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16

    BC337

    Abstract: TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES


    Original     		PDF M3D186 BC337 BC327. MAM182 SCA63 115002/00/03/pp8 BC337 TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR NPN TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25℃) 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage BC337 50 V VCBO: BC338 30


    Original     		PDF BC337 BC338, BC338 BC337 BC338 100mA

    BC337

    Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
    Text: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J


    Original     		PDF BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25

    bc337 transistor datasheet

    Abstract: transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337 BC338
    Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage


    Original     		PDF BC337/338 BC337/BC328 BC337 BC338 BC338 bc337 transistor datasheet transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337

    OF TRANSISTOR BC337

    Abstract: bc337 fairchild BC337 BC338
    Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC337/338 BC327/BC328 BC337 BC338 OF TRANSISTOR BC337 bc337 fairchild BC337 BC338

    OF TRANSISTOR BC338

    Abstract: BC33825TA BC338
    Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC337/338 BC327/BC328 BC337 BC338 OF TRANSISTOR BC338 BC33825TA

    bc337

    Abstract: bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor
    Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor

    BC337

    Abstract: bc337 fairchild BC338
    Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC338

    BC33740BU

    Abstract: bc338 npn bc338 signal transistor bc337 fairchild BC338N
    Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC337/338 BC327/BC328 BC337 BC338 BC33840TA BC33740BU npn bc338 signal transistor bc337 fairchild BC338N

    Untitled

    Abstract: No abstract text available
    Text: BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


    Original     		PDF BC337â BC338 BC327 BC328 BC337 500mA, 300mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR NPN TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25℃) 3. EMITTER Collector current 0.8


    Original     		PDF BC337 BC338, BC338 BC337 BC338 100mA 300mA

    BC337

    Abstract: BC338 BC338 TRANSISTOR BC337 NPN transistor BC337 hfe BC338-40 TRANSISTOR BC338 BC338-16 bc337 transistor BC-337
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC337/BC338 TRANSISTOR NPN FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE VCBO VCEO Parameter


    Original     		PDF BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA, BC337 BC338 BC338 TRANSISTOR BC337 NPN transistor BC337 hfe BC338-40 TRANSISTOR BC338 BC338-16 bc337 transistor BC-337

    BC337 pnp transistor

    Abstract: BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC327 BC328 BC338 BC337 hfe
    Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


    Original     		PDF BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC338 BC337 hfe

    BC337 pnp transistor

    Abstract: st bc337 BC337 BC337 hfe OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC327 BC328
    Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


    Original     		PDF BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor st bc337 BC337 BC337 hfe OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337

    BC327 45V 800mA PNP Transistor

    Abstract: BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC337.


    Original     		PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor

    BC337 pnp transistor

    Abstract: BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327 BC327 BC328
    Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


    Original     		PDF BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327

    bc337

    Abstract: NPN transistor 500ma TO-92 Transistor A12 BC337-16 BC-337-16 bc338-40 BC337 NPN transistor TRANSISTOR BC337-25 transistor bc33740 BC338
    Text: BC337-16/25/40，BC338-16/25/40 NPN Transistor Preliminary Small Signal Diode TO-92 A Features Epitaxial planar die construction B Surface device type mounting E Moisture sensitivity level 1 G Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC337-16/25/40BC338-16/25/40 MIL-STD-202, 19gram C/10s BC337-16 Group16 BC337 BC338 NPN transistor 500ma TO-92 Transistor A12 BC-337-16 bc338-40 BC337 NPN transistor TRANSISTOR BC337-25 transistor bc33740

    BC338C

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 328 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage


    OCR Scan     		PDF BC337/338 BC337/BC BC337 BC338 BC338C

    BC337 45V 800mA NPN Transistor

    Abstract: transistor bc327 BC327 BC337 bc337 45v 800mA
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC327.


    OCR Scan     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor transistor bc327 BC327 BC337 bc337 45v 800mA

    BC327 45V 800mA PNP Transistor

    Abstract: BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


    OCR Scan     		PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor

    bc337

    Abstract: BC338-25 BC338 BC327 NPN transistor
    Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Rating Symbol Characteristic Collector Emitter Voltage


    OCR Scan     		PDF BC337/338 BC327/BC328 BC337 BC338 BC337, bc337 BC338-25 BC338 BC327 NPN transistor

    BC327

    Abstract: BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


    OCR Scan     		PDF BC327 -800mA. -100mA) BC337. BC327 BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Symbol Characteristic Collector Emitter Voltage


    OCR Scan     		PDF BC337/338 BC327/BC328 BC337 BC338 100mA 300mA