TRANSISTOR BA 13 Search Results

TRANSISTOR BA 13 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BA 13 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BCX54/BCX55/BCX56 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER FEATURES High current Low voltage Medium power general purposes Driver stages of audio amplifiers. 1 2 3 SOT-89 MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD	Original	PDF	BCX54/BCX55/BCX56 OT-89 BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX52-16 BCX56 BCX56-10
rohm 2sd1664 Abstract: No abstract text available Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +	Original	PDF	2SB1132 2SA1515S 2SB1237 2SB1132 2SA1515S 65Max. SC-72 R1102A rohm 2sd1664
Transistor 9012 ax Abstract: transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012 Text: S9013 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion Colle ctor Curre nt Ic=500mA TO- 92 Colle ctor P owe r Dissipa tion P c=625mW Compleme ntary to S 9012 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge	Original	PDF	S9013 500mA 625mW 100MHz 100mA Transistor 9012 ax transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012
RF TRANSISTOR 10GHZ Abstract: BFP720 RF TRANSISTOR 10GHZ low noise 2.4ghz lnb RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR 10GHZ RF Bipolar Transistor bipolar transistor ghz s-parameter 1B marking Text: D at a S h ee t , R ev . 1 . 0 , J an ua ry 2 00 9 B FP 72 0 S i G e :C H e t e r oj u n c t i o n W i d e ba n d R F B i p ol a r Transistor S m a l l S i g n a l D i s c r et e s Edition 2009-01-20 Published by Infineon Technologies AG, 85579 Neubiberg, Germany	Original	PDF	BFP720 BFP720 OT343-PO OT343 OT343-FP OT323-TP RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise 2.4ghz lnb RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR 10GHZ RF Bipolar Transistor bipolar transistor ghz s-parameter 1B marking
BE555MN Abstract: No abstract text available Text: ANALOGUE;_ _ INTEGRATED C O N T R O L , TEMPERATURE 13 A 7 2 e 13 A 7 2 s X CIRCHTTS H im I N D U S T R I A L CONTROLLED TRANSISTOR S.A. ARRAYS Features : BA 726 Transistor pair offset voltage . - max.+3 Max. bias current # I,;=100uA : 6 Max. bias current @ I(‘.=10uA :	OCR Scan	PDF	100uA MP-48 MP-24 BE555MN
Untitled Abstract: No abstract text available Text: TOSHIBA -CDISCRETE/OPTOJ D eT I ^ V S S D 9 097250 T O S H I BA DISCRETE/OPTO ¿ Ja ïh ih n 99D 16722 DDlt,72E S \| D T - 31- 13 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2S I 5 72 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (i-MOS) TENTATIVE INDUSTRIAL APPLICATIONS	OCR Scan	PDF	300yA
marking IAY Abstract: CMBT5400 Text: HIGH VOLTAGE TRANSISTOR P -N -P transistor M arking CMBT5400 = K? PA C K A G E O U TLIN E D ETA ILS A LL D IM E N SIO N S IN m m 3.0 0.14 Pin configuration 1 = BA SE 2 = EMITTER 3 = C O LLEC TO R ABSOLUTE MAXIM UM RATIN GS Collector-base voltage open emitter	OCR Scan	PDF	CMBT5400 marking IAY CMBT5400
BSS138LT1 Abstract: J1 TRANSISTOR DIODE SOT-23 PACKAGE Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TM BSS138LT1 N -Channel Enhancem ent Mode Logic Level S O T-23 MOSFET N-CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc-dc converters, power management in portable and ba ttery-po w e re d products such as computers,	OCR Scan	PDF	BSS138LT1 OT-23 OT-23 J1 TRANSISTOR DIODE SOT-23 PACKAGE
telefunken ed 32 5000 Abstract: No abstract text available Text: _ BFP81 ViSH A Y ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF am plifier up to 2 GHz, especially fo r m obile te le phone. Features • Sm all fe ed ba ck capacitance	OCR Scan	PDF	BFP81 BFP81 20-Jan-99 telefunken ed 32 5000
ba6489fs Abstract: BA6479AFP-Y BA6608K BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300 Text: ranrn ICs for Industrial Equipment FDD Block Diagram of Typical Applications « Single-chip FD D available in tuli-custom design Read/write amplifier Side BA M O O S e rte Side Motor driver Transistor array c= => f FDO controller S2PCS Series SA6470/ 80 $9 0 9 »	OCR Scan	PDF	SA6470/ BA6569K BA6600K BA6607K BA6608K BA6610AK BA6612K VBH6620K BA12000 BA13000 ba6489fs BA6479AFP-Y BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300
transistor ba 752 Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.	OCR Scan	PDF	2SC3582 2SC3582
MRF911 Abstract: No abstract text available Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRF911 The RF Line f j = 5.0 G H z @ 30 m A HIGH FREQUENCY TRANSISTOR NPN SILICO N HIGH FREQUENCY TRANSISTOR . . . des ig n ed w id e ba n d NPN S IL IC O N p r i m a r i l y f o r use in h ig h gain, l o w - n o is e t u n e d and	OCR Scan	PDF	MRF911 MRF911
transistor smd z8 Abstract: RF NPN POWER TRANSISTOR C 10-50 GHZ SMD Transistor z6 smd transistor z8 smd transistor Z10 transistor 6 pin SMD Z2 Z808 z202 3 pin TRIMMER capacitor 6 pin TRANSISTOR SMD Z8 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Pow er Transistor D e sig n e d fo r PCN and PCS ba se s ta tio n a p p lic a tio n s , th e M R F 6 4 0 8 incorporates high value em itter ballast resistors, gold metallizations and offers	OCR Scan	PDF	MRF6408 MRF6408PH184 MRF6408 transistor smd z8 RF NPN POWER TRANSISTOR C 10-50 GHZ SMD Transistor z6 smd transistor z8 smd transistor Z10 transistor 6 pin SMD Z2 Z808 z202 3 pin TRIMMER capacitor 6 pin TRANSISTOR SMD Z8

2SC1817 Abstract: TRANSISTOR PJ Text: S El ivi i C O N D U C T O R l TEI' .i l'nTIVTP, RP POWER TRANSISTOR t * 2SC1817 is de sign od for ilF.and VHP Power Amplifier. 'Applications. Most useful for 1 2 - w a t t SSß C i t i z e n s Ba nd Transceiver O u t p u t Stage. 1„ Featui'es / , 15 W min.	OCR Scan	PDF	2SC1817 12--Watfc Vcc-12 T0-22Ã Vctr-10Y 27MHz TRANSISTOR PJ
c 2579 transistor Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor N P N Silico n M PS5179 M otorola Preferred D evice COLLECTOR 3 2 ba se" 1 EMITTER M A X IM U M R A T IN G S Rating C o lle cto r-E m itte r Voltage Symbol Value Unit Vdc Vdc VCEO 12 C o lle c t o r - B a s e Voltage	OCR Scan	PDF	PS5179 1N3195 2j200 c 2579 transistor
transistor DK qj Abstract: JKS-45 SE-49 Text: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @	OCR Scan	PDF	PWS10 CycleS50 010i-flIDUlrNi-No transistor DK qj JKS-45 SE-49
Untitled Abstract: No abstract text available Text: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed	OCR Scan	PDF	T1P2701012-SP 500MHz 10watts 15Watts
cito RF Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3040 The RF Line UHF Power Transistor 40 W — 960 MHz UHF POWER TRANSISTOR NPN SILICON T h e T P 3040 is s p e c ific a lly d e s ig n e d fo r o p e ra tio n as th e fin a l s ta g e in 960 M H z m o b ile ba s e s ta tio n a m p lifie r s . U tiliz a tio n o f e m itte r b a lla s t r e s is to rs a n d g o ld m e ta lliz a tio n	OCR Scan	PDF	TP3040 1N4148 BD135 cito RF
IH33 Abstract: LIMING relay ECG978 relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator Text: I PH ILIPS E C G I NC 17E D • bbSBTEö ECG978 DUAL TIMING CIRCUIT Sem iconductors 14 13 12 I I FEATURES: • TIM IN G FROM M IC R O SEC O N D S THROUGH HOURS • OPERATES IN BOTH ASTABLE A N D M O N O STABLE M OOES • ADJUSTABLE DUTY C Y C L E • H IGH CURRENT OUTPUT C A N SOURCE OR	OCR Scan	PDF	ECG978 ECG978 22-SECOND IH33 LIMING relay relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator
BA12003 Abstract: transistor BA RW BA12004 transistor ba EL20M Text: BA12001 BA12004 BA12002 BA12003 Driver, 7-channel, high current, high voltage The BA12001, BA12002, BA12003, and BA12004 are high-voltage, high-current transistor arrays consisting of 7 Darlington-connected transistors. Dimensions Units : mm (DIP16) Built-in surge absorbing diodes required	OCR Scan	PDF	BA12001, BA12002, BA12003, BA12004 DIP16 DIP16) BA12003 transistor BA RW transistor ba EL20M
EB 13007 Abstract: E 13007 transistor E 13007 T 13007 D 13007 K 13007 TRANSISTOR transistor 13007 e13007 13007 en 13007 Text: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13Q06 : KSE13007 Collector Emitter Voltage : KSE13006	OCR Scan	PDF	KSE13006/13007 KSE13Q06 KSE13007 KSE13006 EB 13007 E 13007 transistor E 13007 T 13007 D 13007 K 13007 TRANSISTOR transistor 13007 e13007 13007 en 13007
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBTA92 PNP high-voltage transistor Product specification Supersedes data of 1998 Jul 21 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES	OCR Scan	PDF	PMBTA92 PMBTA42. PMBTA92 115002/00/04/pp8
AN 6752 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 15 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TU FEATURES • Built-in bias resistor R1 typ. 10 k£2	OCR Scan	PDF	PDTA114TU OT323) OT323 PDTC114TU. 115002/00/03/pp8 AN 6752

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TRANSISTOR BA 13 Search Results

TRANSISTOR BA 13 Result Highlights (5)

TRANSISTOR BA 13 Datasheets Context Search

Untitled

rohm 2sd1664

Transistor 9012 ax

RF TRANSISTOR 10GHZ

BE555MN

Untitled

marking IAY

BSS138LT1

telefunken ed 32 5000

ba6489fs

transistor ba 752

Untitled

MRF911

transistor smd z8

2SC1817

c 2579 transistor

transistor DK qj

Untitled

cito RF

IH33

BA12003

EB 13007

Untitled

AN 6752