TRANSISTOR B 536 Search Results

TRANSISTOR B 536 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR B 536 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
13005f Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005F TO-220FP Fully Isolated Plastic Package B CE High Voltage Switch Mode Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage	Original	PDF	CDL13005F O-220FP 35omers C-120 CDL13005FRev030804E 13005f
13007f Abstract: transistor 13007f e 13007f E 13007 MARKING CODE CDL CDL13007F Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13007F TO-220FP Fully Isolated Plastic Package B CE High Voltage Switch Mode Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage	Original	PDF	CDL13007F O-220FP 35ers C-120 CDL13007Rev 020304E 13007f transistor 13007f e 13007f E 13007 MARKING CODE CDL CDL13007F
CFD1025 Abstract: 200V darlington transistor To-220 Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Manufacturer NPN PLANAR POWER DARLINGTON TRANSISTOR CFD1025 TO-220FP Fully Isolated Plastic Package B CE Power Darlington for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS	Original	PDF	CFD1025 O-220FP C-120 CFD1025Rev 280104D CFD1025 200V darlington transistor To-220
CFB1017 Abstract: CFD1408 Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP POWER TRANSISTOR CFB1017 TO-220FP Fully Isolated Plastic Package B CE Power Amplifier Applications Complementary CFD1408 ABSOLUTE MAXIMUM RATINGS Tc=25ºC VCEO VEBO VALUE	Original	PDF	CFB1017 O-220FP CFD1408 C-120 CFB1017Rev 281004E CFB1017 CFD1408
L 3005 TRANSISTOR Abstract: No abstract text available Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR POWER TRANSISTOR CFC5511 TO-220FP Fully Isolated Plastic Package B CE Complementary CFA2005 ABSOLUTE MAXIMUM RATINGS DESCRIPTION	Original	PDF	QSC/L-000019 CFC5511 O-220FP CFA2005 100ms C-120 CFC5511Rev261002E L 3005 TRANSISTOR
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
BF550 Abstract: transistor marking code 325 0024-B Text: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.	OCR Scan	PDF	24LMC] BF550 OT-23 BF550 transistor marking code 325 0024-B
BFQ 42 transistor Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES	OCR Scan	PDF	BF0251 BFQ251 MSB033 125102/00/04/pp8 BFQ 42 transistor
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.	OCR Scan	PDF	BFP96 OT173X BFQ32C.
F941 Abstract: 2N6671 2N6673 Text: M I L —S —19500/536{USAF AMENDMENT 3 8 Sep tem b er 1987_ SUPERSËDING AMENDMENT 2 7 F e b r u a r y 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVI CE, TRANSISTOR, NPN, S I L I C O N , POWER TYPES 2N6671, AND 2N6673, JAN, JANTX, AND JANTXV This	OCR Scan	PDF	MIL-S-19500/536Ã 2N6671, 2N6673, MIL-S-l9500/536 5961-F941) F941 2N6671 2N6673
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB	OCR Scan	PDF	2SC3908 2SC3908 30MHz, 30MHz.
TRANSISTOR CATALOGUE Abstract: tag l9 225 400 BLF368 Philips 809 08003 2222 031 capacitor philips PINNING-SOT262 MCA-96 16kQ TRANSISTOR 536 Text: Philips Semiconductors • b b S B 'm ÜDBOOm T3T Product specification HAPXi VHF push-pull power MOS transistor BLF368 N AMER PHILIPS/D I S C R E T E bRE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures	OCR Scan	PDF	0D30Db4 BLF368 OT262 MCA96 TRANSISTOR CATALOGUE tag l9 225 400 BLF368 Philips 809 08003 2222 031 capacitor philips PINNING-SOT262 MCA-96 16kQ TRANSISTOR 536
TRANSISTOR K 314 Abstract: telefunken ta 350 bf314 Text: < TELEFUNKEN ELECTRONIC Ô1C D • ñRSDDTb D Q D S n b 2 ■ ALÛÛ T ; - 3 1 - / 7 mitPdjJIMtiM electronic B F 314 ; Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Application« Video Input stages in common base configuration Features:	OCR Scan	PDF
BUK581-100A Abstract: DD3003 Text: tiTE D N AMER P H I L I P S / D I S C R E T E • b bS BT a i □03Dfl3tj 25 2 ■ APX Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	OCR Scan	PDF	0030fl3t, BUK58Ã -100A OT223 aD30a41 BUK581 OT223. BUK581-100A DD3003

2SC5012-T1 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •	OCR Scan	PDF	2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1
on 2518 transistor Abstract: transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11 Text: TELEFUNKEN ELECTRONIC 17E D • Ô ^ Ü O T b 000e]Liö3 3 ■ ALG6 • BU 536 'ïTifLf FMKdM electronic CreativeTecbnotojpe* T-33-11 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique • Short switching time	OCR Scan	PDF	T-33-11 15A3DIN on 2518 transistor transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11
Untitled Abstract: No abstract text available Text: Ordering n u m b e r:E N 5363A 2SC5302 N0.5363A NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Defmition Color Display Horizontal Deflection Output Applications Features • High speed tf= 100ns typ . • High breakdown voltage (Vcbo = 1500V). • High reliability (Adoption of HVP process).	OCR Scan	PDF	2SC5302 100ns 2039D 91296YK TA-0791 G05DM34
TRANSISTOR 536 Abstract: transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538 Text: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO -220 • Complement to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B ase V o lta g e Symbol	OCR Scan	PDF	BD534/536/538 BD533, BD535 BD537 BD534 BD536 BD538 300/iS. TRANSISTOR 536 transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538
choke marking nb 03 Abstract: SOT121 Package BLF246 Text: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	PDF	Q05TRÃ BLF246 OT121 OT121 /CA93V choke marking nb 03 SOT121 Package BLF246
GS 78L05 N Abstract: No abstract text available Text: Philips Semiconductors b b S 3 T 31 7 ? a • Ap X ^P ro d u ctsp ecificat^ VHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE BLF248 bR E D PIN CONFIGURATION FEATURES • High power gain • Easy power control 1 • Good thermal stability /~i • Gold metallization ensures	OCR Scan	PDF	BLF248 OT262 MCB627 GS 78L05 N
LA 7693 Abstract: ic CD 4047 7737 transistor Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain	OCR Scan	PDF	2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor
2SA1362 Abstract: No abstract text available Text: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor M ark in g 2SA1362 = AE P A C K A G E O U T L IN E D ETA ILS A LL D IM E N S IO N S IN m m 3.0 ~2.B Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 X I tJ 3 1.02J 0.89 2 .00_	OCR Scan	PDF	2SA1362 23fl33T4 2SA1362
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR J A J A - 2SC4843 V H F ~U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm 2.1 J:0.1 Low N oise F igure, H igh G ain. N F = l .l d B , \|S 2 le l2 = 1 5 .5 d B f= lG H z	OCR Scan	PDF	2SC4843
MARKING CODE 24 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification	OCR Scan	PDF	PDTC114TE PDTC114TE 115104/00/02/pp8 MARKING CODE 24

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TRANSISTOR B 536 Search Results

TRANSISTOR B 536 Result Highlights (5)

TRANSISTOR B 536 Datasheets Context Search

13005f

13007f

CFD1025

CFB1017

L 3005 TRANSISTOR

2sb504

BF550

BFQ 42 transistor

Untitled

F941

Untitled

TRANSISTOR CATALOGUE

TRANSISTOR K 314

BUK581-100A

2SC5012-T1

on 2518 transistor

Untitled

TRANSISTOR 536

choke marking nb 03

GS 78L05 N

LA 7693

2SA1362

Untitled

MARKING CODE 24