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    TRANSISTOR B 1666 Search Results

    TRANSISTOR B 1666 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 1666 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMSD4448

    Abstract: aahp D3 017 6PIN 1N4148 CMPD7000 EP05Q03L MAX1605 MAX1605ETT-T MAX1605EUT-T MAX1605EVKIT
    Text: 19-1666; Rev 1; 10/03 30V Internal Switch LCD Bias Supply Features ♦ Adjustable Output Voltage up to 30V ♦ 20mA at 20V from a Single Li+ Battery ♦ 88% Efficiency ♦ Up to 500kHz Switching Frequency ♦ Selectable Inductor Current Limit 125mA, 250mA, or 500mA


    Original     		PDF 500kHz 125mA, 250mA, 500mA) MAX1605EUT-T OT23-6 MAX1605ETT-T MO229 CMSD4448 aahp D3 017 6PIN 1N4148 CMPD7000 EP05Q03L MAX1605 MAX1605ETT-T MAX1605EUT-T MAX1605EVKIT

    CMSD4448

    Abstract: No abstract text available
    Text: 19-1666; Rev 1; 10/03 3 0 V I nt e rna l Sw it c h LCD Bia s Supply Fe a t ure s The MAX1605 boost converter contains a 0.5A internal switch in a tiny 6-pin SOT23 package. The IC operates from a +2.4V to +5.5V supply voltage, but can boost battery voltages as low as 0.8V up to 30V at the output.


    Original     		PDF MAX1605 500kHz) 500mA, 250mA, 125mA, T1433-2 CMSD4448

    D3 017 6PIN

    Abstract: CMSD4448 sot23-6 ABW 6-pin ic 237 MAXim step-up sot-23 MBRS0530
    Text: 19-1666; Rev 1; 10/03 30V Internal Switch LCD Bias Supply The MAX1605 boost converter contains a 0.5A internal switch in a tiny 6-pin SOT23 package. The IC operates from a +2.4V to +5.5V supply voltage, but can boost battery voltages as low as 0.8V up to 30V at the output.


    Original     		PDF MAX1605 500kHz) 500mA, 250mA, 125mA, T1433-1 T1433-2 D3 017 6PIN CMSD4448 sot23-6 ABW 6-pin ic 237 MAXim step-up sot-23 MBRS0530

    aahp

    Abstract: MAX1605EVKIT 1n4148 sot23 motorola transistor 2N2907A CMSD4448 1N4148 2N2907A CMPD7000 EP05Q03L MAX1605
    Text: 19-1666; Rev 0; 7/00 28V Internal Switch LCD Bias Supply in SOT23 Features ♦ Adjustable Output Voltage up to 28V ♦ 20mA at 20V from a Single Li+ Battery ♦ 88% Efficiency ♦ Up to 500kHz Switching Frequency ♦ Selectable Inductor Current Limit 125mA, 250mA, or 500mA


    Original     		PDF 500kHz 125mA, 250mA, 500mA) MAX1605EUT-T OT23-6 MAX1605 aahp MAX1605EVKIT 1n4148 sot23 motorola transistor 2N2907A CMSD4448 1N4148 2N2907A CMPD7000 EP05Q03L MAX1605

    CMSD4448

    Abstract: MBRS0530 1N4148 2N2907A CMPD7000 EP05Q03L MAX1605 MAX1605EUT-T MAX1605EVKIT
    Text: 19-1666; Rev 0; 7/00 28V Internal Switch LCD Bias Supply in SOT23 Features ♦ Adjustable Output Voltage up to 28V ♦ 20mA at 20V from a Single Li+ Battery ♦ 88% Efficiency ♦ Up to 500kHz Switching Frequency ♦ Selectable Inductor Current Limit 125mA, 250mA, or 500mA


    Original     		PDF 500kHz 125mA, 250mA, 500mA) MAX1605EUT-T OT23-6 MAX1605 CMSD4448 MBRS0530 1N4148 2N2907A CMPD7000 EP05Q03L MAX1605 MAX1605EUT-T MAX1605EVKIT

    CMSD4448

    Abstract: No abstract text available
    Text: 19-1666; Rev 1; 10/03 30V Internal Switch LCD Bias Supply The MAX1605 boost converter contains a 0.5A internal switch in a tiny 6-pin SOT23 package. The IC operates from a +2.4V to +5.5V supply voltage, but can boost battery voltages as low as 0.8V up to 30V at the output.


    Original     		PDF MAX1605 500kHz) 500mA, 250mA, 125mA, MAX1605EUT MAX1605EUT MAX1605EUT-T MAX1605ETT+ CMSD4448

    CMSD4448

    Abstract: No abstract text available
    Text: 19-1666; Rev 1; 10/03 30V Internal Switch LCD Bias Supply The MAX1605 boost converter contains a 0.5A internal switch in a tiny 6-pin SOT23 package. The IC operates from a +2.4V to +5.5V supply voltage, but can boost battery voltages as low as 0.8V up to 30V at the output.


    Original     		PDF MAX1605 500kHz) 500mA, 250mA, 125mA, MAX1605EUT MAX1605EUT MAX1605EUT-T MAX1605ETT+ CMSD4448

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTOJ DE I ^ 0 ^ 7 5 5 0 O O l b b b E 2 99D 16662 9097250 TOSHIBA <DISCRETE/OPTO SEMICONDUCTOR D T ^ cj^ TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE Æ - M O S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		PDF 2SK386

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA O I S C R E T E / O P T O } ^ 9097250 TOSHIBA CDISCRETE/OPTO ¿jashih SEMICONDUCTOR DE I t O T T S S G O D l b b b S 99D 16665 ^~T- 3ci-J3 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 8 7 SILICON N CHANNEL MOS TYPE 7 T - M 0 S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF -100nA

    2SA1462

    Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
    Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,


    OCR Scan     		PDF 2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor

    JE 800 transistor

    Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
    Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )


    OCR Scan     		PDF uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s

    2SD571

    Abstract: 2SB605
    Text: NEC v U = i > h 7 > y ^ ^ Silicon T ran sisto r 2SD571 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier £fJfil2 Unit : mm o t —T 'i *T> y°ï$co Y ÿ 4 o 2 S B 605 ¿ n y 7 “ ') S > ? >) O / J^ T P tA ^ ^ <, 7.0 MAX. T é tto if t lÎŒ T - t o


    OCR Scan     		PDF 2SD571 2SB605 PWS10 2SD571

    se5020

    Abstract: marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM
    Text: NEC j m *= rJ Ÿ T X '> I J =3 > b S ilic o n T ra n s is to r A 2SA1464 PNP i k ^ r s ] Ja J /; + y T iP iv 'J =i > h l > ï £> <£ 7 'm PNP Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^ 0 / P A C K A G E DIMENSIONS Unit : mm # * / FEATURES


    OCR Scan     		PDF 2SA1464 2SC3739 se5020 marking R1L mot-10 2SA1464 2SC3739 2SC373 MECM

    uPA77HA

    Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460
    Text: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,


    OCR Scan     		PDF uPA77HA K0958 K0985 upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460

    A1376

    Abstract: 2SA1376 PA33 nec C 3514 63445-5 L0249 ScansUX881 NI3T
    Text: NEC h =? Silicon T ra n sisto rs 2 S A 1 3 7 6 , 1 3 7 6 A PNP Epitaxial Transistor High Voltage Amplifier PACKAGE DIMENSIONS ^/FEA TU RES Unit : mm V c e o : ~ 1 8 0 V / — 200 V ( 2 S A 1 376 / 2 S A 1376 A ) o B S E t t . O h FE « ' l - T ' I f i : 0 .7 5


    OCR Scan     		PDF 2SA1376, 3478/2SC A1376 2SA1376 PA33 nec C 3514 63445-5 L0249 ScansUX881 NI3T

    2SB963

    Abstract: 2SD1286 T108 T460 TS33 CC OWV W ST
    Text: NEC j m = f = f iS r f K D arlington T ra n s is to r _ 2SD1286 A NPN =l> NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier, Low Speed Switching ftM M -' ! y b > 7 > if x ? t , U nit: mm 'j u —, v w / -i k, 7 y y° n c c o & t i y 7 4 rtò m ià iz M & T to


    OCR Scan     		PDF 2SD1286 2SB963 2SD1286 T108 T460 TS33 CC OWV W ST

    Untitled

    Abstract: No abstract text available
    Text: Compound Transistor G Σ ÎÆ f* 3 M P N P ^ ft I M 1 L 4 M > ' 3 > : mm) m o A<'f T X IE in; £ f*aM L T ^ i 1 0 Ri = 47 kQ, R 2= 47 kQ) c B o—V A — Ri —V v \ —'* Rs o E OGA1L4M t =? >7° IJ / > 9 U M arking (T a —25 °C ) *1 a v 9 •3 v 9 9


    OCR Scan     		PDF Ta-25 PWS10

    ail4m

    Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
    Text: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±


    OCR Scan     		PDF Ta-25Â ail4m FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M

    2SB1149

    Abstract: 2SD1692 T460
    Text: $r 13 Si PP NEC ✓ N°r 7 - Silicon P o w e r Tran sisto r m = f= r/Y T X S 2 B 1 1 4 9 'J U P N P i fc; P N P Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier « « /FEA TU R ES ^f-JFi /PA C K A G E D IM EN SIO N S U n it: mm o r - u > f > « 1 % vtztb,


    OCR Scan     		PDF 2SB1149 2SD1692 PWS10 CycleS50 2SB1149 T460

    J196

    Abstract: L0836 40t60 2sj196 DF RV transistor 2SK1482
    Text: Mos M O S Field Effect Transistor 2 P 2SJ196 l i P f t ? ' / « izx v -f- > / * MOS FET Ü t &tznb, , y ^ / 1 9 6 9w m m m i f t t » < , x 4 y f- > 'j J MOS F E T MOS FET Z", 5 V'tiJJtiU C ò S &i # a r v* 5.2 MAX -f H jj S T " ì ~ o Œ i t o 5v i c fr b m m m T é t t o


    OCR Scan     		PDF 2SJ196 2SJ196 2SK1482 IEI-620) J196 L0836 40t60 DF RV transistor

    2SD1518

    Abstract: 5AE0 2SD1581 C3052
    Text: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^


    OCR Scan     		PDF 2SD1581 PU0988 2SD1518 5AE0 2SD1581 C3052

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} "H 9097250 TOSHIBA DISCRETE/OPTO » F | ciDci7ESG QGlbbbfl 3 | ~ 99D 16668 D 7 SEMICONDUCTOR 3 ?~/3 TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 8 8 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2C15MAX. -100nA 0Dlbb70 70Shi/n

    A45A

    Abstract: SO402 2SK386 j2f3 16664
    Text: TOSHIBA -CDISCRETE/OPTOJ- ‘H 9097250 TOSHIBA <DISCRETE/OPTO> DE 99D SEMICONDUCTOR I SOTTESO OOlbbba 2 16662 DT_3CH3 TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE TECHNICAL DATA <7T — M O S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		PDF 100nA A45A SO402 2SK386 j2f3 16664

    0T39

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA "H <D I S C R E T E / O P T O » F | ciDci7SSG OOlbbbfl 3 1~~ 99D 16668 D T- TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 8 8 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-MOS ) INDUSTRIAL APPLICATIONS Unit in tnm


    OCR Scan     		PDF DDlbb70 0T-39-I3 0T39