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    TRANSISTOR B 1417 Search Results

    TRANSISTOR B 1417 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 1417 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    Untitled

    Abstract: No abstract text available
    Text: ◆Synchronous Step-Down DC/DC Converter with Built-In LDO Regulator Plus Voltage Detector ◆Step-Down DC/DC Converter's Output Connected In Parallel with LDO Regulator ◆SOP-8 Package For High Current ◆Small-Footprint ◆Output Current :DC/DC:800mA, VR: 400mA


    Original     		PDF 800mA, 400mA XC9511 XC9511

    PCF7931AS

    Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
    Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF 87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps

    NRZL block diagram

    Abstract: LT 5337 767.2 transistor LC resonant MCRF355 153 kHz RFID Manchester c source code using PIC A 673 C2 transistor cloak tag rf 200B
    Text: M MCRF355/360 13.56 MHz Passive RFID Device with Anti-Collision FEATURES • • • • • • • • • • • • Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user-reprogrammable memory On-board 100 ms sleep timer


    Original     		PDF MCRF355/360 MCRF360) DS21287D-page NRZL block diagram LT 5337 767.2 transistor LC resonant MCRF355 153 kHz RFID Manchester c source code using PIC A 673 C2 transistor cloak tag rf 200B

    tda8362b

    Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
    Text: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF 1N4003ID 1N4005G 1N4006G 30-Jun-02 30-Jun-01 30-Jun-01 31-Dec-01 tda8362b OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262

    tag 8833

    Abstract: IC LM 393 N LM 352 voltage regulator Ic 13,56 MHz RFID antenna receiver of rfid tag Bi-phase-L Coding IC LM 393 N pin details 125 kHz RFID tag antenna power supply of uv curing lamp RF inductor 13.56 MHz
    Text: MCRF355 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • • • • • • • Package Type Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer


    Original     		PDF MCRF355 DS21287G-page tag 8833 IC LM 393 N LM 352 voltage regulator Ic 13,56 MHz RFID antenna receiver of rfid tag Bi-phase-L Coding IC LM 393 N pin details 125 kHz RFID tag antenna power supply of uv curing lamp RF inductor 13.56 MHz

    MCRF355

    Abstract: DS21311 AN707 RFID Bi-phase-L Coding DS00710 MCRF360 AN707 up/AN707 RFID AN830 TB031
    Text: MCRF355/360 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer Built-in anti-collision algorithm for reading up to


    Original     		PDF MCRF355/360 MCRF360) D-85737 DS21287F-page MCRF355 DS21311 AN707 RFID Bi-phase-L Coding DS00710 MCRF360 AN707 up/AN707 RFID AN830 TB031

    diode BY100

    Abstract: Power Diode BY100 orega flyback transformer BY100 transistor f344 BY100-200 TEA5170 TV flyback transformer BY100 diode TEA2164
    Text: APPLICATION NOTE TEA5170 - SECONDARY CONTROLLER FOR MASTER-SLAVE STRUCTURE By T. PIERRE SUMMARY Page I INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II OPERATING PRINCIPLES OF MASTER-SLAVE STRUCTURE . . . . . . . . . . . . . . . . .


    Original     		PDF TEA5170 TEA5170 diode BY100 Power Diode BY100 orega flyback transformer BY100 transistor f344 BY100-200 TV flyback transformer BY100 diode TEA2164

    diode BY100

    Abstract: Power Diode BY100 transistor f344 BY100-200 f344 orega flyback transformer TEA5170 an409 MASTER-SLAVE SMPS FOR TV BZX85
    Text: APPLICATION NOTE TEA5170 - SECONDARY CONTROLLER FOR MASTER-SLAVE STRUCTURE By T. PIERRE SUMMARY Page I INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II OPERATING PRINCIPLES OF MASTER-SLAVE STRUCTURE . . . . . . . . . . . . . . . . .


    Original     		PDF TEA5170 diode BY100 Power Diode BY100 transistor f344 BY100-200 f344 orega flyback transformer an409 MASTER-SLAVE SMPS FOR TV BZX85

    Untitled

    Abstract: No abstract text available
    Text: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and


    OCR Scan     		PDF bb53T31 BLY91A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC {DIOD ES/OPTOJ 6367255 MOTOROLA 34 SC D eT | t , 3 b 7 2 5 5 D IO D ES/O PTO r O D3 f l ED ö 4 aoono MICRO-T (continued) '5 l~ n MMT2060 — NPN RF AMPLIFIER TRANSISTOR • designed for high-gain, low noise amplifier, oscillator and mixer applications.


    OCR Scan     		PDF MMT2060

    PC9203

    Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
    Text: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439


    OCR Scan     		PDF PC44E PC44H PC2102 PC3439 PC3442 PC3585 PC3879 PC4036* PC5038 PC5240 PC9203 PC638 PC6079 PC5671 PC160-1 PC9166 PC5303 C6650 PC9202

    1417-2

    Abstract: Load VSWR tolerance CAV 444 1417 ic
    Text: 1417-2 2 Watt "28 Volts’ Class c CHz TECHNOLOGY »FMicKowAVE silicon powe > T»*N5HTo«i M ic ro w a v e 1 4 0 0 - 1 7 0 0 GENERAL DESCRIPTION M H z CASE OUTLINE The 1417-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is


    OCR Scan     		PDF RD11110 000QD34 1417-2 Load VSWR tolerance CAV 444 1417 ic

    17gh

    Abstract: No abstract text available
    Text: m m B & F P rci'jifcts m Microsemi f'NWnws iy 140 Com merce Drive Montgomeryville, PA 18936-1013 Tel: <215 631-9840 TCC 1417-25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICAI FREQUENCY 1 .4 1.70Hz POWSR OUT 2SW POWER OAiM S OdB V O LTAG E


    OCR Scan     		PDF SO1868 1417-2it TCG1417-25 17gh

    44w TRANSISTOR

    Abstract: BV 1351 24V epsilam 10 mb 8936 M147 TCC1417-25 sd1066 1029f 1417-25
    Text: H * : I f/ lv f T»j-m ! fII P ro g re s s P o w e re d b y T ec h no log y "*4 Commerce Drive Montgom ery ville, PA 18936-1013. Tel: 215 631-9840 TC C 1417-25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4 1.7GHz POWER OUT


    OCR Scan     		PDF TCC1417-25 TCC1417-25 S88TCC14I7 44w TRANSISTOR BV 1351 24V epsilam 10 mb 8936 M147 sd1066 1029f 1417-25

    transistor BT 139 F applications note

    Abstract: 12W 60 chip transistor TIC 122 Transistor BLT71 transistor BR 471 A Transistor A 471 TRANSISTOR S 813 FC 0137 9746 transistor 1199
    Text: Philips Semiconductors Product specification UHF power transistor BLT71 FEATURES • Very high efficiency • Low supply voltage. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communications band. DESCRIPTION


    OCR Scan     		PDF BLT71 OT223 OT223 711002b MSA035- OT223. 711002t transistor BT 139 F applications note 12W 60 chip transistor TIC 122 Transistor BLT71 transistor BR 471 A Transistor A 471 TRANSISTOR S 813 FC 0137 9746 transistor 1199

    VEB mikroelektronik

    Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
    Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP


    OCR Scan     		PDF 57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF

    ms 7254 ver 1.1

    Abstract: ms 7254 ver 3.0 T557
    Text: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS


    OCR Scan     		PDF L3b75S4 MJE13070 MJE13070 ms 7254 ver 1.1 ms 7254 ver 3.0 T557

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


    OCR Scan     		PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    transistor b 1560

    Abstract: 6 pin TRANSISTOR SMD CODE XI siemens stepper TCA1561 Q67000-A8208 T4 1560 TCA1560 Q67000-A8209 Q67000-A8272 TCA1560G
    Text: SIE M E N S Stepper Motor Drivers TCA1561 B TCA1560 Advance Information: TCA 1S60 G Bipolar IC Features • • • • 2.5 A peak current High-speed integrated clam p diodes Simple drive Thermal overload protection with hysteresis Ordering Code Package 0 T C A 1561 B


    OCR Scan     		PDF TCA1S60G TCA1561 Q67000-A8209 Q67000-A8208 P-DIP-18-L9 Q67000-A8272 P-DSO-20-L12 PD1P-18-1 transistor b 1560 6 pin TRANSISTOR SMD CODE XI siemens stepper T4 1560 TCA1560 TCA1560G

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300

    M514170

    Abstract: ZIP40-P-475
    Text: O K I Semiconductor MSM5 14170 A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM514170A/ASL is OKI's CMOS silicon gate process


    OCR Scan     		PDF MSM514170A/ASL 144-Word 16-Bit MSM514170A/ASL cycles/16ms, M514170 ZIP40-P-475