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    TRANSISTOR AE RS Search Results

    TRANSISTOR AE RS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AE RS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Chip Resistors Parasitic capacitance

    Abstract: Infineon IGBT Rogowski AN-2006 AN-2006-01 Rogowski Coil application series connection of igbt transistor AE IGBT DRIVER application note AN2006-01
    Text: Application Note Page 1 Department: AIM PMD ID AE Date: 15-12-2005 AN-Number: AN-2006-01 Driving IGBTs with unipolar gate voltage Introduction Infineon recommends the use of negative gate voltage to safely turn-off and block IGBT modules. In areas with nominal currents less than


    Original     		PDF AN-2006-01 100tA D-59581 Chip Resistors Parasitic capacitance Infineon IGBT Rogowski AN-2006 AN-2006-01 Rogowski Coil application series connection of igbt transistor AE IGBT DRIVER application note AN2006-01

    AN-2006-01

    Abstract: igbt infineon transistor AE Rs Chip Resistors Parasitic capacitance Rogowski rogowski coil applications Infineon IGBT AN-2006 transistor AE
    Text: Application Note Page 1 Department: AIM PMD ID AE Date: 15-12-2005 AN-Number: AN-2006-01 Driving IGBTs with unipolar gate voltage Introduction Infineon recommends the use of negative gate voltage to safely turn-off and block IGBT modules. In areas with nominal currents less than


    Original     		PDF AN-2006-01 100tA D-59581 AN-2006-01 igbt infineon transistor AE Rs Chip Resistors Parasitic capacitance Rogowski rogowski coil applications Infineon IGBT AN-2006 transistor AE

    Untitled

    Abstract: No abstract text available
    Text: 19-3250; Rev 1; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3230E/AE and MAX3231E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge


    Original     		PDF RS-232 MAX3230E/AE MAX3231E/AE EIA/TIA-232 ent3231AE

    MAX3231AEEWV

    Abstract: MAX3231E/AE MAX3230AEEWV MAX3230EEBV-T MAX3231EEBV-T MAX3231
    Text: 19-3250; Rev 1; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3230E/AE and MAX3231E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge


    Original     		PDF RS-232 MAX3230E/AE MAX3231E/AE EIA/TIA-232 lowAX3231AE MAX3231AEEWV MAX3230AEEWV MAX3230EEBV-T MAX3231EEBV-T MAX3231

    antenna 434MHz

    Abstract: design oscillator pierce Application Notes transistor AE RF application of LC oscillator 868MHz antenna 868MHZ PCB 868-MHz transistor use in oscillator 915MHz pierce oscillator
    Text: Application Note SAW-Components Comparison between negative impedance oscillator Colpitz oscillator and feedback oscillator (Pierce structure) App.: Note #13 Author: Updated: Version: Department: Alexander Glas June 19, 2001 1.1 SAW CE AE PD EPCOS AG SAW Components


    Original     		PDF D-81617 antenna 434MHz design oscillator pierce Application Notes transistor AE RF application of LC oscillator 868MHz antenna 868MHZ PCB 868-MHz transistor use in oscillator 915MHz pierce oscillator

    Circuit diagram of Regulated Power supply 6V 5A

    Abstract: W302A3-2
    Text: 19-3250; Rev 1; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3230E/AE and MAX3231E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge


    Original     		PDF RS-232 MAX3230E/AE MAX3231E/AE EIA/TIA-232 MAX3230E/MAX3230AE/MAX3231E/MAX3231AE Circuit diagram of Regulated Power supply 6V 5A W302A3-2

    28AE

    Abstract: 28-AE MAX3228EEBV-T MAX3229EEBV-T
    Text: 19-2139; Rev 2; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3228E/AE and MAX3229E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge


    Original     		PDF RS-232 MAX3228E/AE MAX3229E/AE EIA/TIA-232 low-p32 28AE 28-AE MAX3228EEBV-T MAX3229EEBV-T

    Untitled

    Abstract: No abstract text available
    Text: 19-2139; Rev 2; 10/08 ±15kV ESD-Protected +2.5V to +5.5V RS-232 Transceivers in UCSP and WLP The MAX3228E/AE and MAX3229E/AE are +2.5V to +5.5V powered EIA/TIA-232 and V.28/V.24 communications interfaces with low power requirements, high datarate capabilities, and enhanced electrostatic discharge


    Original     		PDF RS-232 MAX3228E/AE MAX3229E/AE EIA/TIA-232

    Untitled

    Abstract: No abstract text available
    Text: 19-0165; Rev 2; 1/96 5 V, St e p-Dow n, Curre nt -M ode PWM DC-DC Conve rt e rs _Fe a t ure s The MAX730A/MAX738A/MAX744A are 5V-outp ut CMOS, step-down switching regulators. The MAX738A/ MAX744A accept inputs from 6V to 16V and deliver


    Original     		PDF MAX730A/MAX738A/MAX744A MAX738A/ MAX744A 750mA. 500mA MAX730A 450mA 21-589B 127mm

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1074 Application Notes for AP3771 System Solution Prepared by Zhao Jing Jing System Engineering Dept. Regulation PSR . AP3771 has the special technique to suppress the audio noise, internal line compensation to reduce the number of system components, fixed cable


    Original     		PDF AP3771 AP3771,

    schematic diagram 180v dc motor speed controller

    Abstract: C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor tl8850 C6113 EM-553-F9T C4054 transistor
    Text: A B C D E F G H AIWA VX-G142 OPERATION 1 SCHEMATIC DIARGAM 8 8 OPERATION 1 PCB 7 7 OS753 GP1U281R 3 GND FROM OPERATION 2 B+ 1 Vout 6 ATR LED 7 T-REC LED 8 REC LED PLAY BACK LED SW Q758 DTC114TS C751 100P B W804 1 PLAY BACK D795 270 R754 270 R793 W801 POWER LED SW


    Original     		PDF VX-G142 OS753 GP1U281R EM-553-F9T DTC114TS CY759 EQ-552F9T schematic diagram 180v dc motor speed controller C4106 transistor C4106 t5001 ic tl8850ap c4060 transistor tl8850 C6113 EM-553-F9T C4054 transistor

    AP3765

    Abstract: k385
    Text: Application Note 1064 Design and Application Notes for AP3765 System Solution Prepared by Sun Jun Jie System Engineering Dept. charger criteria with AP3765 system solution. 1. Introduction The AP3765 uses Pulse Frequency Modulation PFM method to realize Discontinuous Conduction Mode


    Original     		PDF AP3765 k385

    BB 505 Varicap Diode

    Abstract: varactor diode bb 205 DUAL CONVERSION NARROWBAND FM RECEIVERS cf 455 MC145166 RMC-2A6597HM colpitts oscillator vhf mc13135
    Text: MC13135 MC13136 FM Communications Receivers The MC13135/MC13136 are the second generation of single chip, dual conversion FM communications receivers developed by Motorola. Major improvements in signal handling, RSSI and first oscillator operation have been made. In addition, recovered audio distortion and audio drive have


    Original     		PDF MC13135/MC13136 MC13135 MC13136 BB 505 Varicap Diode varactor diode bb 205 DUAL CONVERSION NARROWBAND FM RECEIVERS cf 455 MC145166 RMC-2A6597HM colpitts oscillator vhf

    IVN5000

    Abstract: IVN5001
    Text: IVN5000,1 AN Series FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes aE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. .7 AMPERES 40-100 VOLTS


    OCR Scan     		PDF IVN5000 IVN5000 IVN5001 IVN5001

    Untitled

    Abstract: No abstract text available
    Text: b3E • b2M^ae? MITSUBISHI 0015105 DGTL 527 ■ H IT 3 M ITSU B ISH I BIPOLAR DIGITAL ICs M 54574P L06IC 4 -U N IT 700m A TR A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION The M 54574P is a semiconductor integrated circuit, con­ sisting of four transistor


    OCR Scan     		PDF 54574P L06IC) 54574P 700mA) -75TC

    T7K40

    Abstract: No abstract text available
    Text: IH NPNff—U > h>h~7> y .X £ / ' NPN Darlington Transistor Outline Dim ensions 4.6* ~*ï i?fiBiI§]S& Eq u ivalen t C ircu it 2 . 4 ± 0 .3 ?c nQ.6-0.1 =+0-3 Bo- Unit ! mm Case : TO-220 • — vw— * — vw— ■ ~22on -oi2on Ae A b so lu te Max. R a tin g s


    OCR Scan     		PDF O-220 2SD1349 T7K40) T7K40

    HHB8

    Abstract: No abstract text available
    Text: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o BN1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #


    OCR Scan     		PDF PWiS10 HHB8

    471 kck

    Abstract: transistor ajw UV 471 2SD1697
    Text: 7 s— S • 2/ — h Silicon Transistor r 2SD1697 N P N ib 7 + ‘> 7 ; H - > lJ 3 i& m fo m tiw ffim n iW i t 800 a ^ m 'C ’To O ffi;V c E (sa t 'f"i~ « * » * :£ » 'i > ? h K 7 >f 7 " -¥ • a . • - t - x F l lE ,y p . SO aE # r V CBO 100 V V CEO


    OCR Scan     		PDF 2SD1697 PWS10 11fe1 471 kck transistor ajw UV 471 2SD1697

    i0485

    Abstract: F506 pw510 m86s TS33 X108 TC-6058 transistor 3E l 0534 tc6058
    Text: Compound Transistor Î&î/LF*9M N P N X ti ìs7 \,Wi > lJ □ V n m HMm ¥ f i o;< j 7 x m n .£ f à M lX ^ È - f : m m ) 2 .8 ± 0 .2 ( R i = 22 k Q ) 0 .65 1.5 o F N 1 F 4 Z t 3 > 7°!) 9 > 9 IJ T i È f f l 'C è È t D (T a = 25 °C ) il a «s aE -?-


    OCR Scan     		PDF PW510 CycleS50 i0485 F506 m86s TS33 X108 TC-6058 transistor 3E l 0534 tc6058

    UF460

    Abstract: 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s
    Text: Compound Transistor A if# N 1 A 3 Q St o '< 4 T X Ì È Ì Ì £ 1*1/1 L T ^ R i = 1 .0 kQ , R 2= 10 i - t o kQ o — w v Ri — o A A 1A 3 Q £ n > 7 ° ij y > ? 'J X " itm T è £ w 1 \ v — R2 <» O e (Ta = 25 °C) Tl a& g aE # {ÌL fé n u ? ? •^ - X P I fE


    OCR Scan     		PDF CycleS50 SC-43B UF460 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s

    Untitled

    Abstract: No abstract text available
    Text: GEC PLES S EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S 3095-1 0 ZN1040E/AE UNIVERSAL COUNT/DISPLAY CIRCUIT Th e Z N 1 0 4 0 is designed to satisfy the need for a universal count/display circuit suitable for the widest possible range of applications. This bipolar device allows fast count rates and


    OCR Scan     		PDF ZN1040E/AE ZN1040

    Untitled

    Abstract: No abstract text available
    Text: For Immediate Assistance, Contact Your Local Salesperson Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER FEATURES APPLICATIONS • INSTRUMENTATION AMPLIFIER INPUT Low Offset Voltage, 30|iV max Low Voltage Drift, 0.75 xV/°C max Low Nonlinearity, 0.01% max


    OCR Scan     		PDF 4-20mA 14-PIN 17313b5

    ZN1040E

    Abstract: bcd to seven segment circuit diagram decade counter display multiplex 7 segment common anode mpx blanking bcd to seven segment circuit diagram 7 segment common anode counter decoder COUNTER LED bcd bcd to seven segment circuit diagram using ic 744 4 digit COUNTER LED bcd rs flip-flop IC 7400
    Text: GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S 3095-1.0 Z N 1 0 4 0 E /A E UNIVERSAL COUNT/DISPLAY CIRCUIT The ZN1040 is designed to satisfy the need for a universal count/display circuit suitable for the widest possible range of applications. This bipolar device allows fast count rates and


    OCR Scan     		PDF ZN1040E/AE ZN1040 ZN1040E bcd to seven segment circuit diagram decade counter display multiplex 7 segment common anode mpx blanking bcd to seven segment circuit diagram 7 segment common anode counter decoder COUNTER LED bcd bcd to seven segment circuit diagram using ic 744 4 digit COUNTER LED bcd rs flip-flop IC 7400

    rs flip-flop IC 7400

    Abstract: bcd to seven segment circuit diagram using ic 744 anti-bounce circuit ZN1040E bcd to 7 segment display using common cathode ztx550 equivalent 4 digit 7 segment display pin configuration 12 pi 4 digit multiplexed display system with leading z ZN1040AE zn1040
    Text: GEC PLESSEY S E M I C O N D U C T O R S PRELIMINARY INFORMATION 3095-1.0 Z N 1 0 4 0 E /A E UNIVERSAL COUNT/DISPLAY CIRCUIT The ZN1040 is designed to satisfy the need for a universal count/display circuit suitable for the widest possible range of applications. This bipolar device allows fast count rates and


    OCR Scan     		PDF ZN1040E/AE ZN1040 rs flip-flop IC 7400 bcd to seven segment circuit diagram using ic 744 anti-bounce circuit ZN1040E bcd to 7 segment display using common cathode ztx550 equivalent 4 digit 7 segment display pin configuration 12 pi 4 digit multiplexed display system with leading z ZN1040AE