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    TRANSISTOR A94 Search Results

    TRANSISTOR A94 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A94 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A94 YOUDA TRANSISTOR Si PNP TRANSISTOR—A94 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -400V *Collector current up to –300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF -400V 300mA -300V, -10mA,

    Untitled

    Abstract: No abstract text available
    Text: A94 YOUDA TRANSISTOR SI PNP TRANSISTOR—A94 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -400V *Collector current up to –300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF -400V 300mA -300V, -10mA,

    a940 Transistor

    Abstract: c2073 transistor TRANSISTOR c2073 C2073 transistor a940 A940 A940 C2073 C2073 2 c2073 transistor npn c2073 silicon npn transistor
    Text: C2073 NPN Epitaxial Silicon Transistor TO-220 TV VERTICAL DEFLECTION OUTPUT Complement to A940 Collector-Emitter Voltage: VCEO=150V Collector Dissipation: PC max =25W Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage


    Original     		PDF C2073 O-220 500mA, a940 Transistor c2073 transistor TRANSISTOR c2073 C2073 transistor a940 A940 A940 C2073 C2073 2 c2073 transistor npn c2073 silicon npn transistor

    BR a94

    Abstract: A94 TRANSISTOR A94 TRANSISTOR PNP transistor br a94 transistor A94 PNP 400V
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR PNP FEATURES TO-92 High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO


    Original     		PDF -100A -400V, -10mA -100mA -10mA, -50mA, 30MHz BR a94 A94 TRANSISTOR A94 TRANSISTOR PNP transistor br a94 transistor A94 PNP 400V

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors A94 SOT-89-3L TRANSISTOR PNP FEATURES High voltage 1 2 3 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value Unit VCBO


    Original     		PDF OT-89-3L OT-89-3L

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors A94 SOT-89-3L TRANSISTOR PNP FEATURES High voltage 1 2 3 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value Units VCBO


    Original     		PDF OT-89-3L OT-89-3L

    transistor br A94

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR PNP FEATURES TO-92 Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 1. EMITTER -0.2 A 2. BASE Collector-base voltage V(BR)CBO: -400


    Original     		PDF -400V, -10mA 30MHz transistor br A94

    BR a94

    Abstract: IC 555 datasheet of ic 555 A94 TRANSISTOR datasheet ic 555
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR（ PNP ） FEATURES TO—92 Power dissipation PCM: 0.625 W （Tamb=25℃） Collector current ICM: 1.EMITTER -0.2 A 2.BASE Collector-base voltage V BR CBO :


    Original     		PDF O--92 -100A -10mA 30MHz 270TYP 050TYP BR a94 IC 555 datasheet of ic 555 A94 TRANSISTOR datasheet ic 555

    Untitled

    Abstract: No abstract text available
    Text: A94 -0.2A , -400V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE Excellent hFE Linearity CLASSIFICATION OF hFE 1 Product-Rank A94-A A94-B1 A94-B2 A94-C


    Original     		PDF -400V A94-A A94-B1 A94-B2 A94-C -400V, -10mA -100mA -50mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A94 TRANSISTOR PNP 1. BASE FEATURES  Low Collector-Emitter Saturation Voltage  High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L -400V -10mA -100mA -50mA -10mA -50mA

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR PNP FEATURES TO-92 Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 1. EMITTER -0.2 A 2. BASE Collector-base voltage V(BR)CBO: -400 V 3. COLLECTOR Operating and storage junction temperature range


    Original     		PDF -400V, -10mA 30MHz

    BR a94

    Abstract: transistor A94 transistor br A94 A94 TRANSISTOR PNP
    Text: A94 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :-0.2 A Collector-base voltage V (BR)CBO :-400 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF -50mA -10mA -10mA 30MHz BR a94 transistor A94 transistor br A94 A94 TRANSISTOR PNP

    BR a94

    Abstract: transistor br a94 A94 TRANSISTOR PNP transistor A94 A94 TRANSISTOR
    Text: A94 A94 TRANSISTOR PNP FEATURES TO-92 Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 1. EMITTER -0.2 A 2. BASE Collector-base voltage V(BR)CBO: -400 V 3. COLLECTOR Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF -400V -400V, -10mA 30MHz BR a94 transistor br a94 A94 TRANSISTOR PNP transistor A94 A94 TRANSISTOR

    A940A

    Abstract: No abstract text available
    Text: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA940A 2SC2073A SC-67 A940A

    A940A

    Abstract: No abstract text available
    Text: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA940A 2SC2073A SC-67 2-10R1A A940A

    A94 TRANSISTOR

    Abstract: BCPA94 BCPA44 A94B transistor A94 br a94 transistor br A94
    Text: BCPA94 -0.5 A, -400 V PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The BCPA94 is designed for application requires high voltage. SOT-89 FEATURES 


    Original     		PDF BCPA94 BCPA94 OT-89 300mA BCPA44 -100A, -400V, -10mA A94 TRANSISTOR BCPA44 A94B transistor A94 br a94 transistor br A94

    transistor a949

    Abstract: A949 a949 transistor A949 Y 2SA949
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)


    Original     		PDF 2SA949 transistor a949 A949 a949 transistor A949 Y 2SA949

    transistor a949

    Abstract: A949 2SA949 A949 Y a949 transistor
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)


    Original     		PDF 2SA949 transistor a949 A949 2SA949 A949 Y a949 transistor

    transistor a949

    Abstract: A949 2SA949
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 4.0 pF typ. • High transition frequency: fT = 120 MHz (typ.)


    Original     		PDF 2SA949 transistor a949 A949 2SA949

    transistor a949

    Abstract: A949 2SA949 a949 transistor TOSHIBA a949
    Text: 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications • High breakdown voltage: VCEO = −150 V • Low output capacitance: Cob = 5.0 pF max • High transition frequency: fT = 120 MHz (typ.)


    Original     		PDF 2SA949 O-92MOD transistor a949 A949 2SA949 a949 transistor TOSHIBA a949

    BR a94

    Abstract: transistor SOT23 4d transistor A94 A94 TRANSISTOR A94 TRANSISTOR PNP MMBTA94
    Text: MMBTA94 High-Voltage PNP Transistor Surface Mount COLLECTOR 3 SOT-23 3 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -400 -450 -6.0


    Original     		PDF MMBTA94 OT-23 10MHz) 23-Sep-05 OT-23 BR a94 transistor SOT23 4d transistor A94 A94 TRANSISTOR A94 TRANSISTOR PNP MMBTA94

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and amplification. PINNING - SOT323


    OCR Scan     		PDF BC807W; BC808W OT323 BC807-25W BC807W BC807-40W BC807-16W BC807W:

    transistor A94

    Abstract: transistor br A94 BR a94 A94 TRANSISTOR PNP "a94"
    Text: m TO-92 Plastic-Encapsulate Transistors cc ^ A94 TRANSISTOR PNP FEATURES P cm: 0.625W (Tamb=25°C) Ic m : -0.2 A voltage V(BR)CBO: - 4 0 0 V junction temperature range Tj.Tstg: -55°C to + 150“C ELECTRICAL CHARACTERISTICS (Tamb=25°C u n l e s s o t h e r w is e


    OCR Scan     		PDF