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    TRANSISTOR A22 Search Results

    TRANSISTOR A22 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA2223A Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance Complementary to 2SC6145A


    Original     		PDF 2SA2223A 2SC6145A

    Untitled

    Abstract: No abstract text available
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = –260 V


    Original     		PDF 2SA2223 2SC6145 2SA1668A

    transistor A2210

    Abstract: ENA0667B 2sa2210 2SA2210-1E
    Text: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes


    Original     		PDF ENA0667B 2SA2210 150ement, A0667-7/7 transistor A2210 ENA0667B 2sa2210 2SA2210-1E

    transistor A2210

    Abstract: 2SA2210
    Text: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes


    Original     		PDF 2SA2210 ENA0667B A0667-7/7 transistor A2210 2SA2210

    transistor A2210

    Abstract: a2210 2sa2210
    Text: 2SA2210 Ordering number : ENA0667A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes


    Original     		PDF ENA0667A 2SA2210 A0667-5/5 transistor A2210 a2210 2sa2210

    SGA-2286

    Abstract: DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier
    Text: Product Description Stanford Microdevices’ SGA-2286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-2286 SGA-2286 DC-3500 EDS-100625 DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier

    SGA-2263

    Abstract: A22 T transistor transistor data cd
    Text: Product Description Stanford Microdevices’ SGA-2263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		PDF SGA-2263 SGA-2263 DC-3500 EDS-100626 A22 T transistor transistor data cd

    transistor A2222

    Abstract: A2222 2SA2222SG 2sa2222 ENA1799 A1799 2SA22
    Text: 2SA2222SG Ordering number : ENA1799 SANYO Semiconductors DATA SHEET 2SA2222SG PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Adoption of MBIT process


    Original     		PDF 2SA2222SG ENA1799 --10A) --250mV A1799-4/4 transistor A2222 A2222 2SA2222SG 2sa2222 ENA1799 A1799 2SA22

    transistor A2222

    Abstract: a2222 2SA2222SG ENA1799B A1799 2SA2222 a2222sg 2SA222 D2612 ENA1799
    Text: 2SA2222SG Ordering number : ENA1799B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222SG High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity IC=-10A


    Original     		PDF ENA1799B 2SA2222SG --10A) --250mV A1799-7/7 transistor A2222 a2222 2SA2222SG ENA1799B A1799 2SA2222 a2222sg 2SA222 D2612 ENA1799

    transistor A2222

    Abstract: A2222
    Text: 2SA2222SG Ordering number : ENA1799B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222SG High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity IC=-10A


    Original     		PDF 2SA2222SG ENA1799B --10A) --250mV A1799-7/7 transistor A2222 A2222

    transistor A2222

    Abstract: a2222 TO-220F-3SG ENA1799A 2SA2222SG SC-67 2SA22
    Text: 2SA2222SG Ordering number : ENA1799A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222SG High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity IC=-10A


    Original     		PDF ENA1799A 2SA2222SG --10A) --250mV A1799-7/7 transistor A2222 a2222 TO-220F-3SG ENA1799A 2SA2222SG SC-67 2SA22

    2sa2219

    Abstract: A2219 2SC6139 2sa221 2-7D101A 2SA22
    Text: 2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 ○ Audio Frequency Amplifier Applications • High collector voltage Unit: mm : VCEO = －160 V min • Small collector output capacitance : Cob = 17pF • High transition frequency : fT = 100MHz (typ.)


    Original     		PDF 2SA2219 100MHz 2SC6139 -55lled 2sa2219 A2219 2SC6139 2sa221 2-7D101A 2SA22

    Untitled

    Abstract: No abstract text available
    Text: 2SA2223A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


    Original     		PDF 2SA2223A T01-004JA-081027

    2SA2223A

    Abstract: A2223A 2SC6145A SANKEN AUDIO High power audio transistor equivalent table transistor 0882 SANKEN Sanken Transistor Mt 200 SANKEN POWER TRANSISTOR CF35
    Text: 2SA2223A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


    Original     		PDF 2SA2223A 2SA2223A A2223A 2SC6145A SANKEN AUDIO High power audio transistor equivalent table transistor 0882 SANKEN Sanken Transistor Mt 200 SANKEN POWER TRANSISTOR CF35

    2SA2223

    Abstract: multi emitter transistor transistor 0882 2SA1668A SANKEN AUDIO transistor a2223 2SC6145 SANKEN transistor tip 35c sanken transistor
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


    Original     		PDF 2SA2223 2SA2223 multi emitter transistor transistor 0882 2SA1668A SANKEN AUDIO transistor a2223 2SC6145 SANKEN transistor tip 35c sanken transistor

    2SA1668A

    Abstract: 2sa2223 transistor a2223 A2223 2SC6145 transistor TO-3P Outline Dimensions sanken transistor TRansistor C 101 G746 rohs 2SC614
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve


    Original     		PDF 2SA2223 2SC6145 2SA1668A 2SA1668A transistor a2223 A2223 2SC6145 transistor TO-3P Outline Dimensions sanken transistor TRansistor C 101 G746 rohs 2SC614

    2SA2210-1E

    Abstract: transistor A2210
    Text: Ordering number : ENA0667B 2SA2210 Bipolar Transistor http://onsemi.com –50V, –20A, Low VCE sat PNP TO-220F-3SG Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes Low collector-to-emitter saturation voltage


    Original     		PDF ENA0667B 2SA2210 O-220F-3SG A0667-7/7 2SA2210-1E transistor A2210

    SGA-2263-TR1

    Abstract: SGA-2263
    Text: Preliminary Product Description SGA-2263 Stanford Microdevices’ SGA-2263 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.2-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		PDF SGA-2263 SGA-2263 50-ohm DC-3500 EDS-100626 SGA-2263-TR1

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    021B2

    Abstract: transistor cbj hmv12 pnp germanium transistor 15bis AFY16 BA RV mesa
    Text: Nicht für N eu entw icklun g PNP-Mesatransistor für HF-Anwendungen bis 900 MHz AFY16 A FY 16 ist ein PNP-Germanium-Transistor in Mesa-Techmk um Gehäuse 18 A 4 DIN 41 876 T O -72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor A FY 16 ist für


    OCR Scan     		PDF Q60106-Y16 B63310-K1-A12 021B2 transistor cbj hmv12 pnp germanium transistor 15bis AFY16 BA RV mesa

    AFY16

    Abstract: Germanium Transistor 71lb 21b22
    Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.


    OCR Scan     		PDF AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22

    s22b

    Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
    Text: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­


    OCR Scan     		PDF BF181 s22b bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B

    A22 T transistor

    Abstract: RS Components transistor t03
    Text: RS Technical Library T03 Transistor Cover Dimensions RS Stock No 402-131 A22-4015 T 0 3 thin flange 1.375 34 .93 480 ( 12 . 19 ) 00 in oo d m CM RS Components shall not b e liable for any liability or loss of any nature (howsoever caused and whether or not due to RS components' negligence)


    OCR Scan     		PDF A22-4015 A22 T transistor RS Components transistor t03