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    TRANSISTOR A111 Search Results

    TRANSISTOR A111 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)


    Original     		PDF 2SC5551A ENA1118A 300mA) 250mm2Ã A1118-6/6

    A11182

    Abstract: 2sc5551a A1118-4/4
    Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)


    Original     		PDF ENA1118A 2SC5551A 300mA) 250mm2 A1118-6/6 A11182 2sc5551a A1118-4/4

    IC 7419

    Abstract: ic marking 4410 ic 4026
    Text: 15GN03NA Ordering number : ENA1110 SANYO Semiconductors DATA SHEET 15GN03NA NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications Applications • VHF, RF, MIXER, OSC, IF amplifier. Features • • High cutoff frequency : fT=1.5GHz typ.


    Original     		PDF 15GN03NA ENA1110 S21e2 A1110-6/6 IC 7419 ic marking 4410 ic 4026

    A1111

    Abstract: No abstract text available
    Text: 55GN01CA Ordering number : ENA1111 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=9.5dB typ f=1GHz .


    Original     		PDF ENA1111 55GN01CA S21e2 A1111-6/6 A1111

    CRE 6203

    Abstract: IC163 Transistor NP 3773
    Text: 55GN01NA Ordering number : ENA1116 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01NA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =7dB typ f=1GHz .


    Original     		PDF 55GN01NA ENA1116 S21e2 400MHz) A1116-6/6 CRE 6203 IC163 Transistor NP 3773

    transistor A1111

    Abstract: a1111 transistor npn Epitaxial Silicon zs 35 a1111 8 DATASHEET OF IC 741 1 307 329 082 IC 741 data sheet uA 741 IC data sheet 55GN01CA
    Text: 55GN01CA Ordering number : ENA1111 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=9.5dB typ f=1GHz .


    Original     		PDF 55GN01CA ENA1111 S21e2 A1111-6/6 transistor A1111 a1111 transistor npn Epitaxial Silicon zs 35 a1111 8 DATASHEET OF IC 741 1 307 329 082 IC 741 data sheet uA 741 IC data sheet 55GN01CA

    transistor A1111

    Abstract: free ic 7404 transistor 5104 db
    Text: 55GN01CA Ordering number : ENA1111A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz


    Original     		PDF ENA1111A 55GN01CA S21e2 013A-009 SC-59, O-236ement, A1111-8/8 transistor A1111 free ic 7404 transistor 5104 db

    Untitled

    Abstract: No abstract text available
    Text: 55GN01CA Ordering number : ENA1111A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01CA UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz


    Original     		PDF 55GN01CA ENA1111A A1111-8/8

    2SC5551

    Abstract: No abstract text available
    Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).


    Original     		PDF 2SC5551A ENA1118 300mA) 250mm20 A1118-4/4 2SC5551

    Untitled

    Abstract: No abstract text available
    Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).


    Original     		PDF ENA1118 2SC5551A 300mA) 250mm20 A1118-4/4

    55GN01MA

    Abstract: ic 4518 applications 491 marking transistor SANYO DC 303 temperature control IM 314 IM 304 zo 103 ma A1114
    Text: 55GN01MA Ordering number : ENA1114 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =10dB typ f=1GHz .


    Original     		PDF 55GN01MA ENA1114 S21e2 250mm20 A1114-6/6 55GN01MA ic 4518 applications 491 marking transistor SANYO DC 303 temperature control IM 314 IM 304 zo 103 ma A1114

    functions of ic 4528

    Abstract: A1115 TRANSISTOR 6019 transistor 7929 55GN01SA A11156
    Text: 55GN01SA Ordering number : ENA1115 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01SA UHF Wide-band Low-noise Amplifier Applications Features • • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=10dB typ f=1GHz .


    Original     		PDF 55GN01SA ENA1115 S21e2 A1115-6/6 functions of ic 4528 A1115 TRANSISTOR 6019 transistor 7929 55GN01SA A11156

    TLE 4984

    Abstract: transistor mcp 6723
    Text: 55GN01MA Ordering number : ENA1114A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=10dB typ f=1GHz


    Original     		PDF ENA1114A 55GN01MA S21e2 250mm2 023A-009 A1114-8/8 TLE 4984 transistor mcp 6723

    Untitled

    Abstract: No abstract text available
    Text: 55GN01MA Ordering number : ENA1114A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=10dB typ f=1GHz


    Original     		PDF 55GN01MA ENA1114A 250mm2Ã A1114-8/8

    IC 8256

    Abstract: A1113
    Text: 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ f=1GHz .


    Original     		PDF ENA1113 55GN01FA S21e2 400MHz) A1113-8/8 IC 8256 A1113

    Untitled

    Abstract: No abstract text available
    Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		PDF TN2529 125pF DSFP-TN2529 A111407

    transistor A1111

    Abstract: IC-7404 A1111
    Text: Ordering number : ENA1111A 55GN01CA RF Transistor http://onsemi.com 10V, 70mA, fT=5.5GHz, NPN Single CP Features • • High cutoff frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=9.5dB typ f=1GHz Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		PDF ENA1111A 55GN01CA S21e2 A1111-8/8 transistor A1111 IC-7404 A1111

    55GN01FA-TL-H

    Abstract: 7308 IC
    Text: 55GN01FA Ordering number : ENA1113A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=11dB typ f=1GHz


    Original     		PDF ENA1113A 55GN01FA S21e2 400MHz) A1113-9/9 55GN01FA-TL-H 7308 IC

    a1113

    Abstract: application of ic 7489 55GN01FA
    Text: 55GN01FA Ordering number : ENA1113 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01FA UHF Wide-band Low-noise Amplifier Applications Features • • • • High cut-off frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =11dB typ f=1GHz .


    Original     		PDF 55GN01FA ENA1113 S21e2 400MHz) A1113-8/8 a1113 application of ic 7489 55GN01FA

    TN1L

    Abstract: 125OC TN0104 TN0104N3-G TN0104N8-G A1117 fet sot-89 marking code
    Text: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN0104 DSFP-TN0104 A111708 TN1L 125OC TN0104 TN0104N3-G TN0104N8-G A1117 fet sot-89 marking code

    Untitled

    Abstract: No abstract text available
    Text: TN2535 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN2535 125pF DSFP-TN2535 A111908

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA1118A 2SC5551A 300mA, 300mA) 250mm2 A1118-6/6

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    41003

    Abstract: No abstract text available
    Text: SOLID STATE CURRENT SENSORS LDA100/LDA101/LDA110/LD A111 D E S C R IP T IO N M The LDA100/LDA101/LDA110/LDA111 are optocouplers with a single or darlirigton transistor outputs. A bi-directional or uni-directional input is available depending on which model you choose.


    OCR Scan     		PDF LDA100/LDA101/LDA110/LD LDA100/LDA101/LDA110/LDA111 100mA 00/LDA101/LDA110/LDA111 LDA10 /LDA101 LOA100/LDA101 LDA10M DA101 LDA100/LDA101 41003