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    TRANSISTOR A106 Search Results

    TRANSISTOR A106 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking LN4

    Abstract: No abstract text available
    Text: 2SC5227A Ordering number : ENA1063 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF 2SC5227A ENA1063 A1063-6/6 transistor marking LN4

    Untitled

    Abstract: No abstract text available
    Text: 2SC5227A Ordering number : ENA1063A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)


    Original     		PDF ENA1063A 2SC5227A S21e2 013A-009 A1063-8/8

    Untitled

    Abstract: No abstract text available
    Text: 2SC5227A Ordering number : ENA1063A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)


    Original     		PDF 2SC5227A ENA1063A A1063-8/8

    Untitled

    Abstract: No abstract text available
    Text: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).


    Original     		PDF ENA1061 2SC5501A S21e2 500mW 250mm20 A1061-5/5

    Untitled

    Abstract: No abstract text available
    Text: 2SC5226A Ordering number : ENA1062 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF 2SC5226A ENA1062 A1062-6/6

    transistor marking LN4

    Abstract: MARKING LN4 2SC5226A ITR07919 ITR07920 ITR07921 ITR07922 ITR07924 NPN 4401 transistor
    Text: 2SC5226A Ordering number : ENA1062 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF 2SC5226A ENA1062 S21e2 A1062-6/6 transistor marking LN4 MARKING LN4 2SC5226A ITR07919 ITR07920 ITR07921 ITR07922 ITR07924 NPN 4401 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SC5226A Ordering number : ENA1062A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)


    Original     		PDF 2SC5226A ENA1062A A1062-8/8

    transistor zo 607

    Abstract: MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572
    Text: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).


    Original     		PDF 2SC5501A ENA1061 S21e2 500mW A1061-5/5 transistor zo 607 MARKING LN4 ZO 607 MA 2SC5501A ic 747 zo 607 738.55 29572

    transistor marking LN4

    Abstract: transistor zo 607 ZO 607 MA 2SC5227A ITR07966 ITR08202 ITR08203 ITR08204 a1063 A10633
    Text: 2SC5227A Ordering number : ENA1063 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF 2SC5227A ENA1063 S21e2 A1063-6/6 transistor marking LN4 transistor zo 607 ZO 607 MA 2SC5227A ITR07966 ITR08202 ITR08203 ITR08204 a1063 A10633

    Untitled

    Abstract: No abstract text available
    Text: 2SC5501A Ordering number : ENA1061 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=13dB typ (f=1GHz).


    Original     		PDF 2SC5501A ENA1061 500mW A1061-5/5

    SC 708-4

    Abstract: 2SC5226A A1062 marking 624 sot-323
    Text: 2SC5226A Ordering number : ENA1062A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5226A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz)


    Original     		PDF ENA1062A 2SC5226A S21e2 023A-009 A1062-8/8 SC 708-4 2SC5226A A1062 marking 624 sot-323

    SC-82AB sot-343

    Abstract: ic not 4069 2SC5501A SC82AB sot-343
    Text: 2SC5501A Ordering number : ENA1061A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz)


    Original     		PDF ENA1061A 2SC5501A S21e2 500mW 250mm2 A1061-8/8 SC-82AB sot-343 ic not 4069 2SC5501A SC82AB sot-343

    Untitled

    Abstract: No abstract text available
    Text: 2SC5501A Ordering number : ENA1061A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5501A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz)


    Original     		PDF 2SC5501A ENA1061A 500mW A1061-8/8

    7039a

    Abstract: transistor zo 607 A1064 zo 607 MA zo 607 EC3H02BA ECSP1006-3
    Text: EC3H02BA Ordering number : ENA1064B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF EC3H02BA ENA1064B S21e2 1006size) A1064-5/5 7039a transistor zo 607 A1064 zo 607 MA zo 607 EC3H02BA ECSP1006-3

    transistor zo 607

    Abstract: ZO 607 MA zo 607 equivalent ZO 607 3308 TOP MARK IC 890 f 562 ic pdf datasheet ic 565 application zo 103 ma zo 103 ma 75 607 ZO 109
    Text: EC3H02BA Ordering number : ENA1064A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF EC3H02BA ENA1064A S21e2 1006size) A1064-5/5 transistor zo 607 ZO 607 MA zo 607 equivalent ZO 607 3308 TOP MARK IC 890 f 562 ic pdf datasheet ic 565 application zo 103 ma zo 103 ma 75 607 ZO 109

    Untitled

    Abstract: No abstract text available
    Text: EC3H02BA Ordering number : ENA1064B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H02BA VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • • Low noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF ENA1064B EC3H02BA S21e2 1006size) A1064-5/5

    7039a

    Abstract: No abstract text available
    Text: EC3H03BA Ordering number : ENA1068 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Type Silicon Transistor EC3H03BA VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features • • • • • Low noise : NF=1.1dB typ f=1GHz . High gain :⏐S21e⏐2=12dB typ (f=1GHz).


    Original     		PDF EC3H03BA ENA1068 S21e2 UL94HB) A1068-5/5 7039a

    7039a

    Abstract: a1069
    Text: EC3H07BA Ordering number : ENA1069 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H07BA UHF to S Band Low-Noise Amplifier and OSC Applications Features • • • • • • Low noise : NF=1.5dB typ f=2GHz . High cutoff frequency : fT=10GHz typ (VCE=1V).


    Original     		PDF EC3H07BA ENA1069 10GHz S21e2 UL94HB) A1069-7/7 7039a a1069

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1061A 2SC5501A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP4 Features • • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=13dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Large allowable collector dissipation : PC=500mW max


    Original     		PDF ENA1061A 2SC5501A 500mW 250mm2Ã A1061-8/8

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1063A 2SC5227A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single CP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA1063A 2SC5227A S21e2 A1063-8/8

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1062A 2SC5226A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP Features • • • Low-noise : NF=1.0dB typ f=1GHz High gain : ⏐S21e⏐2=12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF ENA1062A 2SC5226A S21e2 A1062-8/8

    CPM2C

    Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
    Text: Micro Programmable Controller CPM2C Omron’s powerful CPM2C micro controller redefines the traditional micro PLC. The CPM2C’s 33 mm width allows it to fit into small spaces, offers 119 instructions, and has processing speeds rivaling many ‘small’ PLCs.


    Original     		PDF RS-232C/Peripheral R301-E3-01 CPM2C CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF