MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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CC5401
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
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CC5401
C-120
CC5401
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
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CC5401
C-120
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BC856AS Preliminary DUAL TRANSISTOR DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR DESCRIPTION The UTC BC856AS is a dual PNP surface mount small signal transistor, it uses UTC’s advanced technology to provide customers
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BC856AS
BC856AS
BC856ASG-AL6-R
OT-363
QW-R206-108
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NCC 5551
Abstract: CC5551 NCC5551 transistor 9AW marking 9AW 5551 transistor equivalent transistor bce 50 53 transistor marking wt
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5551 9AW TO-92 BCE MARKING : NCC 5551 High Voltage NPN Transistor for General Purpose and Telephony Applications
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CC5551
C-120
CC5551AI230801
NCC 5551
CC5551
NCC5551
transistor 9AW
marking 9AW
5551 transistor
equivalent transistor bce 50 53
transistor marking wt
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CTBC 635
Abstract: 635-16 TBC635-16 TBC635 63516 cbc635 BC635 TRANSISTOR E C B BC635 BC635-10 BC635-16
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC635 9AC TBC635 (Tin Finish Part) LEAD FREE TO-92 Plastic Package E CB High Current Transistor Complementary BC636 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
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BC635
TBC635
BC636
C-120
TBC635Rev020505E
CTBC 635
635-16
TBC635-16
TBC635
63516
cbc635
BC635 TRANSISTOR E C B
BC635
BC635-10
BC635-16
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ZXTN19020DG
Abstract: TS16949 ZXTN19020DGTA ZXTP19020DG
Text: ZXTN19020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 9A VCE(sat) < 35mV @ 1A RCE(sat) = 20mΩ PD = 3.0W Complementary part number ZXTP19020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN19020DG
OT223
ZXTP19020DG
OT223
D-81541
ZXTN19020DG
TS16949
ZXTN19020DGTA
ZXTP19020DG
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Untitled
Abstract: No abstract text available
Text: ZXTN19020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 9A VCE(sat) < 35mV @ 1A RCE(sat) = 20mΩ PD = 3.0W Complementary part number ZXTP19020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN19020DG
OT223
ZXTP19020DG
OT223
D-81541
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CD 5401
Abstract: 2N5401 CD5401
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR 2N5401 9AW TO-92 CBE MARKING: CD 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
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2N5401
C-120
CD 5401
2N5401
CD5401
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CC5551
Abstract: transistor cc 5551
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5551 9AW TO-92 BCE MARKING : CC 5551 High Voltage NPN Transistor For General Purpose And Telephony Applications.
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CC5551
C-120
CC5551
transistor cc 5551
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MARKING W1 AD
Abstract: CC5401
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
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CC5401
C-120
MARKING W1 AD
CC5401
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cd5551
Abstract: CD 5551 5551 2N5551
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR 2N5551 9AW TO-92 CBE MARKING : CD 5551 High Voltage NPN Transistor For General Purpose And Telephony Applications.
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2N5551
C-120
cd5551
CD 5551
5551
2N5551
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6R190C6
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
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6R190
Abstract: 6R190C6 6r190c IPW60R190
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190
6R190C6
6r190c
IPW60R190
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6R190C6
Abstract: 6r190 6r190c to247 pcb footprint transistor SMD MARKING CODE 14
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
6r190
6r190c
to247 pcb footprint
transistor SMD MARKING CODE 14
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6R190C6
Abstract: marking code ll SMD Transistor SMD TRANSISTOR MARKING 9D 6r190 d 998 transistor circuit smd transistor marking LL IPA60R190C6 IPB60R190C6 IPI60R190C6 IPP60R190C6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
marking code ll SMD Transistor
SMD TRANSISTOR MARKING 9D
6r190
d 998 transistor circuit
smd transistor marking LL
IPA60R190C6
IPB60R190C6
IPI60R190C6
IPP60R190C6
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
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6R190C6
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
6R190C6
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6R190C6
Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6
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IPx60R190C6
IPA60R190C6,
IPB60R190C6
IPI60R190C6,
IPP60R190C6
IPW60R190C6
726-IPB60R190C6
IPB60R190C6
6R190C6
6r190
6r190c
SMD TRANSISTOR MARKING 9D
IPA60R190C6
IPW60R190C6
6r190c6 infineon
6R19
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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8AEL
Abstract: No abstract text available
Text: SILICO N TR A N SISTO R 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLO DESCRIPTION The 2SD1699 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver. Circuits. FEA TU R ES PACKAGE DIMENSIONS * H'9h 0 0 Currcm 9ain'
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2SD1699
2SD1699
8AEL
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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IE-02
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PHD3N20L Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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PHD3N20L
IE-02
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