TRANSISTOR SOT23
Abstract: BCW31 BCW32 transistor
Text: 970714 01 SIDA: 1/6 ELFA artikelnr. 71-310-63 BCW31 transistor SOT23 71-310-71 BCW32 transistor SOT23 970714 01 SIDA: 2/6 970714 01 SIDA: 3/6 970714 01 SIDA: 4/6 970714 01 SIDA: 5/6 970714 01 SIDA: 6/6
|
Original
|
PDF
|
BCW31
BCW32
TRANSISTOR SOT23
transistor
|
diode 400V 4A
Abstract: diode 4A 400v ultra fast ICE 280 IRF1010 TRANSISTOR BIPOLAR 400V 20A
Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
|
Original
|
PDF
|
7072A
IRGB4059DPbF
O-220AB
diode 400V 4A
diode 4A 400v ultra fast
ICE 280
IRF1010
TRANSISTOR BIPOLAR 400V 20A
|
IRF1010
Abstract: 8A2021
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
|
Original
|
PDF
|
97073B
IRGB4060DPbF
IRF1010
O-220AB
IRF1010
8A2021
|
diode 400V 4A
Abstract: IRF1010 diode 4A 400v ultra fast
Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
|
Original
|
PDF
|
7072A
IRGB4059DPbF
IRF1010
O-220AB
diode 400V 4A
IRF1010
diode 4A 400v ultra fast
|
IRGB4060D
Abstract: IRF1010 CT4-15
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
|
Original
|
PDF
|
97073B
IRGB4060DPbF
O-220AB
IRGB4060D
IRF1010
CT4-15
|
Untitled
Abstract: No abstract text available
Text: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
|
Original
|
PDF
|
IRGB4060DPbF
IRF1010
O-220AB
|
Untitled
Abstract: No abstract text available
Text: PD - 97072 IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
|
Original
|
PDF
|
IRGB4059DPbF
IRF1010
O-220AB
|
Untitled
Abstract: No abstract text available
Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
|
Original
|
PDF
|
7072A
IRGB4059DPbF
O-220AB
|
Untitled
Abstract: No abstract text available
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
|
Original
|
PDF
|
97073B
IRGB4060DPbF
O-220AB
|
2SA1723
Abstract: ITR04378 ITR04379 ITR04380 ITR04381 ITR04382
Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7
|
Original
|
PDF
|
ENN4668
2SA1723
2009B
2SA1723]
300mA)
O-126
2SA1723
ITR04378
ITR04379
ITR04380
ITR04381
ITR04382
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7
|
Original
|
PDF
|
ENN4668
2SA1723
2009B
2SA1723]
300mA)
O-126
|
HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
|
Original
|
PDF
|
|
scientific imaging technologies
Abstract: SI-003A mpp schematic infrared diode p1d scientific imaging technologies inc ccd incoming inspection SI-424A
Text: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 1024 x 1024 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Unique thinning and Quantum Efficiency enhancement processes n Excellent QE from IR to UV
|
Original
|
PDF
|
SI-003A
SI-003A,
scientific imaging technologies
mpp schematic
infrared diode p1d
scientific imaging technologies inc
ccd incoming inspection
SI-424A
|
scientific imaging technologies
Abstract: SI-003A SIA003A AD590 mpp schematic scientific imaging technologies inc ccd incoming inspection SI003
Text: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 1024 x 1024 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Packaged with a two stage Thermoelectric cooler for improved performance without a dewar
|
Original
|
PDF
|
|
|
SI-502A
Abstract: scientific imaging technologies SI-424 SI-502 scientific imaging technologies inc Scientific Imaging Technologies, Inc mpp schematic SI-424A ccd 512 x 512
Text: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 512 x 512 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Unique thinning and Quantum Efficiency enhancement processes n Excellent QE from IR to UV
|
Original
|
PDF
|
SI-502A
SI-502A,
scientific imaging technologies
SI-424
SI-502
scientific imaging technologies inc
Scientific Imaging Technologies, Inc
mpp schematic
SI-424A
ccd 512 x 512
|
Dotmatrix
Abstract: 14 pin hd44780 display
Text: EA 9707-V24S 8.2001 RS-232C INTERFACE FÜR DOTMATRIX LCD Zubehör: EA KV24-9B Abmessungen 80x32 mm TECHNISCHE DATEN * * * * * * * * * * * * FÜR ALLE DOTMATRIX: 1x8 . 1x16 . 2x16 . 4x16 . 4x20 einschließlich 4x40 VERSORGUNGSSPANNUNG 5V/5mA ODER 9.35V OPTIONAL
|
Original
|
PDF
|
9707-V24S
RS-232C
KV24-9B
80x32
SER404-HNLED
SER202-CNLED
SER242-NLED
SER404-NLW
SER308-NLED
Dotmatrix
14 pin hd44780 display
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
PDF
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
|
OCR Scan
|
PDF
|
|
HCPL-6531
Abstract: HP optocoupler
Text: ¥hn\ H E W L E T T m LKM P A C K A R D Transistor Output, Hermetically Sealed Optocoupler Technical Data Features • Manufactured and Tested on a MIL-STD-1772 Certified Line • QML-MIL-H-38534 • Performance Guaranteed Over -55°C to +125C Ambient Temperature
|
OCR Scan
|
PDF
|
MIL-STD-1772
QML-MIL-H-38534
MIL-STD-883
6N135/6,
HCPL-2530/31
1430-CMO
D-7030
HCPL-6531
HP optocoupler
|
RC723DP
Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525
|
OCR Scan
|
PDF
|
/2525A
/3525A
/2527A
/3527A
523/3523A
RC723DP
SN72748L
MC7805G
LM340H-05
SG3525 equivalent
transistor KT 209 M
78M15HM
SN52107L
SG711
SG7812CK
|
logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
|
OCR Scan
|
PDF
|
TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
|
Untitled
Abstract: No abstract text available
Text: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r
|
OCR Scan
|
PDF
|
D-7030
|
LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: HIGH RESOLUTION OPTICAL REFLECTIVE SENSOR H B C S T E C H N IC A L D A T A -1 1 0 0 N O V E M B E R 1984 Features « FOCUSED EMITTER AND DETECTOR IN A SING LE PACKAGE • H IG H RESO LU TIO N — .190mm SPOT SIZE • 700nm VISIBLE EM ITTER • LENS FILTERED TO REJECT A M B IENT LIG H T
|
OCR Scan
|
PDF
|
190mm
700nm
178mm
94iiU4
-70-30R
|