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    TRANSISTOR 91 330 Search Results

    TRANSISTOR 91 330 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 91 330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    60F10

    Abstract: C67078-S1342-A2
    Text: BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 600 V 8.5 A 0.8 Ω TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol


    Original     		PDF O-220 C67078-S1342-A2 60F10 C67078-S1342-A2

    BUZ 91

    Abstract: transistor buz 350 C67078-S1342-A3 600V8A
    Text: BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		PDF O-220 C67078-S1342-A3 BUZ 91 transistor buz 350 C67078-S1342-A3 600V8A

    transistor buz 350

    Abstract: BUZ 330 C67078-S1342-A3 buz 91 f
    Text: Not for new designs BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol


    Original     		PDF O-220 C67078-S1342-A3 transistor buz 350 BUZ 330 C67078-S1342-A3 buz 91 f

    transistor l7805cv

    Abstract: in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV
    Text: Date: 4-May-07 PCB reference: STEVAL-IFS003V1 Date: March, 20 2006 Company: S Contact person: Nishant Omar E-mail: [email protected] Phone:+91 0120 4003603 Reference 1 ST7 - MCU 1 NAND-Flash 1 Voltage Regulator 1 Real Time Clock 1 MOSFET 1 Diode 1 npn Transistor


    Original     		PDF 4-May-07 STEVAL-IFS003V1 ST7F651AR6T1 NAND512W3A L7805 M41T81S STB100NF IN4148 2STR1215 TQFP64 transistor l7805cv in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800NSM33
    Text: GP800NSM33 GP800NSM33 Hi-Reliability Single Switch IGBT Module Preliminary Information DS5372-2.0 February 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 3300V Rating ■ 800A Per Module


    Original     		PDF GP800NSM33 DS5372-2 AN4502 AN4503 AN4505 AN4506 GP800NSM33

    ldr 10k

    Abstract: LDR 07 equivalent Antenna Coil 330uh NIPPON CAPACITORS LDR 20K SM8142AD 3 pins LDR Datasheet transistor 91 330 LDR Datasheet ldr resistor
    Text: SM8142 NIPPON PRECISION CIRCUITS INC. Application Note EL Sheet Driver IC OVERVIEW SM8142A SM8142B The SM8142A has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a


    Original     		PDF SM8142 SM8142A SM8142B SM8142A SM8142B NK9905BE CIRCUITS--13 ldr 10k LDR 07 equivalent Antenna Coil 330uh NIPPON CAPACITORS LDR 20K SM8142AD 3 pins LDR Datasheet transistor 91 330 LDR Datasheet ldr resistor

    transistor 91 330

    Abstract: toko 10k coil ldr 10k NIPPON CAPACITORS 1SS370 SM8143 SM8143A
    Text: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Sheet Driver IC OVERVIEW The SM8143 has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.


    Original     		PDF SM8143 SM8143 80cm2 NK0001AE CIRCUITS--19 transistor 91 330 toko 10k coil ldr 10k NIPPON CAPACITORS 1SS370 SM8143A

    transistor 91 330

    Abstract: Circuit diagram of LDR ldr 10k SM8143 NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16
    Text: SM8143 Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.


    Original     		PDF SM8143 SM8143 NK0001CE transistor 91 330 Circuit diagram of LDR ldr 10k NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16

    transistor 91 330

    Abstract: NIPPON CAPACITORS
    Text: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.


    Original     		PDF SM8143 NK0001BE CIRCUITS--19 transistor 91 330 NIPPON CAPACITORS

    str 6307

    Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


    Original     		PDF ST1200FXF21 500-V, 000-A 300-V, 200-A str 6307 str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module

    LDR 5K

    Abstract: LDR 3PIN transistor current booster circuit ldr 10k of LDR 5K NIPPON CAPACITORS SM8142BD Circuit diagram of LDR ldr resistor 1SS370
    Text: SM8142 Application Note EL Driver IC OVERVIEW SM8142A SM8142B The SM8142A has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a


    Original     		PDF SM8142 SM8142A SM8142B SM8142A SM8142B NK9905CE LDR 5K LDR 3PIN transistor current booster circuit ldr 10k of LDR 5K NIPPON CAPACITORS SM8142BD Circuit diagram of LDR ldr resistor 1SS370

    Untitled

    Abstract: No abstract text available
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


    Original     		PDF ST1200FXF21 500-V, 000-A 300-V, 200-A

    AM417

    Abstract: Wheatstone Bridge amplifier Wheatstone Bridge operational amplifier wheatstone bridge interface WITH ADC Instrumentation Amplifier IC SOP08 5V11mA "Instrumentation Amplifier" AM467 BC557C
    Text: AM417 – Ratiometric instrumentation amplifier with adjustable output stage PRINCIPLE FUNCTION Integrated instrumentation amplifier with an output stage for the amplification of differential signals and with an internal current source for the supply of external signal sources. The


    Original     		PDF AM417 200mV info/products/ms54xx AM417: an1019 AM417 Wheatstone Bridge amplifier Wheatstone Bridge operational amplifier wheatstone bridge interface WITH ADC Instrumentation Amplifier IC SOP08 5V11mA "Instrumentation Amplifier" AM467 BC557C

    h8ps OMRON Operation Manual

    Abstract: H8PS-8BFP OMRON H8Ps H8PS-8BF H8PS-8BP omron H8PS-8BFP WIRING DIAGRAM FOR H8PS RPM METER Y92C-30 H7ER
    Text: H8PS H8PS Cam Positioner H8PS Economical Cam Positioner Does the Work of Eight Cam Switches • Easy replacement of mechanical cam switches with absolute encoder input ■ Simple to set, with single-function keys ■ Accepts 330-rpm input, ideal for use with a


    Original     		PDF 330-rpm 16-cam h8ps OMRON Operation Manual H8PS-8BFP OMRON H8Ps H8PS-8BF H8PS-8BP omron H8PS-8BFP WIRING DIAGRAM FOR H8PS RPM METER Y92C-30 H7ER

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V b 8.5 A ^DS on Package Ordering Code 0.8 Í2 TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1342-A2 fi235b05 A23Sb05

    buz91a

    Abstract: transistor buz91 C67078-S1342-A3 BUZ-91a 6C35
    Text: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 A Vbs 600 V h ff DS on Package Ordering Code 8A 0.9 n TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		PDF O-220 C67078-S1342-A3 aH35fa05 35hds buz91a transistor buz91 C67078-S1342-A3 BUZ-91a 6C35

    " transistor" fgs 3

    Abstract: Fly DS 100
    Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1342-A2 " transistor" fgs 3 Fly DS 100

    BUZ91

    Abstract: transistor buz91 C67078-S1342-A2 235bQ5 gs d050 transistor 91 330
    Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V h ^DS on Package Ordering Code 8.5 A 0.8 £2 TO-220 AB C67078-S1342-A2 M axim um Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1342-A2 023SbD5 BUZ91 transistor buz91 C67078-S1342-A2 235bQ5 gs d050 transistor 91 330

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 91 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G Type Vds b ^DS on Package Ordering Code BUZ 91 A 600 V 8A 0.9 £2 TO-220 AB C67078-S1342-A3 Maxim um Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1342-A3 fl23Sb05 0235bD5

    2903 D

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • ÜSDM33Ö DQQBbTì M ■ ALGR T-91-01 PROCESS JEA Process JE A NPN High-Voltage Darlington Transistor Process J E A is a double-diffused epitaxial planar silicon Darlington pair. It is designed for use in highvoltage, high-gain amplifier circuits.


    OCR Scan     		PDF 5DM33Ã T-91-01 500mA T-91-Ã 2903 D

    667 transistor ecb

    Abstract: EVL32-060 A50L-0001-0109
    Text: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)


    OCR Scan     		PDF O-237 667 transistor ecb EVL32-060 A50L-0001-0109

    K2400F1

    Abstract: metal halide ignitor circuit IGNITOR Z 400 M IGNITOR Z 400 M k k2401 KZ20D hid lamp ignitor application notes HQI-T250W OSRAM ignitor ignitor circuit 400
    Text: SIDAC 95 - 330 Volts Genera! Description The Sidac is a silicon bilateral voltage triggered sw itch with greater pow er-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac sw itches on through a negative resistance region


    OCR Scan     		PDF DO-15X -214AA TQ-202AB K2400F1 metal halide ignitor circuit IGNITOR Z 400 M IGNITOR Z 400 M k k2401 KZ20D hid lamp ignitor application notes HQI-T250W OSRAM ignitor ignitor circuit 400

    K24008

    Abstract: No abstract text available
    Text: Do not use m ounting tab or center lead, electrica lly connected SIDAC 95 - 330 Volts General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage


    OCR Scan     		PDF

    Metal Halide Lamp Ignitor

    Abstract: OSRAM ignitor K1190 K24008 hid lamp ignitor application notes SIDAC transistor tl 187 ignitor for sodium K10S0E7 transistor 91 330
    Text: DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use m ounting tab or center lead, electrically connected SIDAC 95 - 330 Volts General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon


    OCR Scan     		PDF DO-214AA O-202AB DO-15X DO-214AA Metal Halide Lamp Ignitor OSRAM ignitor K1190 K24008 hid lamp ignitor application notes SIDAC transistor tl 187 ignitor for sodium K10S0E7 transistor 91 330