CB2203
Abstract: Leroy Somer MFA56 180v dc motor speed controller MFA80VL CB2103 MFA63S MFA71L MFA80L ac motor inductance
Text: Issued March 1997 232-3715 Data Pack B Data Sheet dc industrial electrical motors and gearboxes A dc motor and motor/gearbox range of totally enclosed, 2 poles, permanent magnet type, designed for use with thyristor or transistor drive for variable speed application.
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IR2E67M
Abstract: IR2E58U IRM053U7
Text: Analog LED DRIVERS ☆New • LED Drivers • Built-in Step-up Circuit 1 Model No. Function PQ6CB11X1CP White LED driver for backlight (for small panels) PQ7L2020BP IR2E58U White LED driver for backlight IR2E65U ☆IR2E71Y product LED driver for backlight and call
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PQ6CB11X1CP
PQ7L2020BP
IR2E58U
IR2E65U
IR2E71Y
64QAM
IR2E67M
IR2E58U
IRM053U7
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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1090-80L
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NTD409
Abstract: No abstract text available
Text: NEC SILICON DARLINGTON POWER TRANSISTOR NTD409 ELECTRON DEVICE LOW FREQUENCY AMPLIFIER AND LOW SPEED SW ITC H IN G NPN SILICON EPITAXIAL MESA DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable for hummer driver, pulse motor driver and relay driver applications.
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NTD409
NTD409
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2SC2756
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SC2756 VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2756 is an NPN silicon e pita xial transistor intended fo r use as a V H F in m illim e te rs m ixer in a tu n e r o f a T V receiver. The device features are high conversion gain and lo w d is to rtio n .
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2SC2756
2SC2756
dBpV/50
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3SK131
Abstract: 0580S
Text: MOS FIELD EFFECT TRANSISTOR 3SK131 RF AM P. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS • Su itab le fo r use as R F a m p lifie r in V H F T V tuner. in millim eter* • L o w C rIS : 0 .0 5 p F T Y P .
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3SK131
3SK131
0580S
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TC518512
Abstract: transistor D195
Text: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er
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TC518512PL/FL/FTL/rRL-70LV/80LV/10LV
TheTC518512PL
TC518512PL
TC518512PL-LV
D-194
TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV
D-195
TC518512
transistor D195
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Untitled
Abstract: No abstract text available
Text: BUZ76A Semiconductor Data Sheet October 1998 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ76A
TA17404.
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Untitled
Abstract: No abstract text available
Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF740
O-220AB
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier PD - 9 .1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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1461C
IRG4PC30U
O-247AC
O-247AC
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Untitled
Abstract: No abstract text available
Text: IRFP440 S e m iconductor Data Sheet July 1999 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP440
O-247
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Untitled
Abstract: No abstract text available
Text: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS
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TC518128A-LV
TC518128A
-10LV,
-12LV
18128A
L-80LV
L-10LV
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS
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7C518129A-LV
TC518129A-LV
-12LV
TC518129AFWL-80LV
TC518129AFWL-10LV
TC518129AFWL-12LV
TC518129APL/AFL/AFWLâ
-10LV,
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Untitled
Abstract: No abstract text available
Text: N EC ELECTRONICS INC 30E D L^27S55 0 02T77b b • T " .4 |-7 5 PHOTO INTERRUPTER PS4008 PHOTO INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS The PS4008 photo coupled interrupter module containing a GaAs in millimeters inches light em itting diode and an NPN silicon photo-transistor,
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27S55
02T77b
PS4008
PS4008
T-41-73
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20irj
Abstract: EH25 0680L 2SA1934 2SC5176
Text: TO SH IBA 2SA1934 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 934 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) at I q = - 3 A • High Speed Switching Time : tgtg^l.O/^s (Typ.)
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2SA1934
2SC5176
20irj
EH25
0680L
2SA1934
2SC5176
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2SA1934
Abstract: 2SC5176
Text: TO SH IBA 2SA1934 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 934 (2SA1934) HIGH CURRENT SWITCHING APPLICATIONS Unit in mm DC-DC CONVERTER APPLICATIONS 10±0.2 101.2 • Low Collector Saturation Voltage : VCE (sat)= - ° - 4V (Max.) at I q = - 3 A
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2SA1934
2SA1934)
2SC5176
2SA1934
2SC5176
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TC518129AF-10
Abstract: No abstract text available
Text: 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129A-LV Family is a 1M bit high-speed CMOS Pseudo-Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizes one transistor dynamic memory cell array with CMOS peripheral circuitry to achieve large capacity, high speed accesses, and low
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TC518129A-LV
TC518129APL/AFL-80LV
TC518129APL/AFL-1OLV
TC518129APL/AFL-12LV
DIP32
TC518129APL
TC518129AF-10
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS
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L06IC/NEH0RY
TC518129A-LV
TC518129APL/AFL/AFWLâ
-10LV,
-12LV
TC518129AFTL/ATRLâ
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S0426
Abstract: 2SC417 2SC4177 F210 T460 T540 40yw 2181M 0427J TC6215
Text: Silicon Transistor 2SC4177 f t ftw i t 7 "' -y K I C J B t L T o j g / J ' ^ ^ - r i ) ») , o2SA1611 t 3 >7° 'J / >9 m m f l t t . t. : mm) 2 . 1 + 0.1 U T-lfIfi-C'ë â i “o 1.25 ± 0 . 1 ohFE^SS^o hpE * 200 TY P . Vce = 6.0 V, Ic — 1.0 mA) o SiBEt>* ¡Ht'0
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2SC4177
o2SA1611
S0426
2SC417
2SC4177
F210
T460
T540
40yw
2181M
0427J
TC6215
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V54C128
Abstract: No abstract text available
Text: gr VITELIC f V54C128 FAMILY HIGH PERFORMANCE, 128K x 8 BIT, PSEUDOSTA TIC, CMOS RAM ADVANCED 80/80L 10/10L 12/12L CE Access Time, tCEA 80 ns 100 ns 120 ns OE Access Time, (tQEA) 35 ns 40 ns 50 ns Min. Read-Write Cycle Time, (tRC) 130 ns 160 ns 190 ns HIGH PERFORMANCE V54C128
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V54C128
80/80L
V54C128
10/10L
12/12L
32-pin
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transistor D128
Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes
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TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L
TC518129B
TheTC518129B
D-132
TC518129BPL/BSPL/BFL/BFWL/BFTL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1OL
D-133
transistor D128
TC518129
D128 transistor
transistor d133
ksh 200 TRANSISTOR equivalent
TRANSISTOR 80l
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes
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TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L
TC518129B
D-133
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TC518129
Abstract: TC518129cpl transistor d155
Text: TOSHIBA TC518129CPL/CFWL/CFTL-70/80/10 TC518129CPL/CFWL/CFTL-70L/80L/ 10L SILICON GATE CMOS p r e l im in a r y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129C is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129C utilizes
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TC518129CPL/CFWL/CFTL-70/80/10
TC518129CPL/CFWL/CFTL-70L/80L/
TC518129C
TC518129CPL/CFWL/CFTL-70L/80L/1OL
1--L/08
D-157
TC518129
TC518129cpl
transistor d155
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