CTA4100A
Abstract: No abstract text available
Text: Relays and Timers www.factorymation.com Digital Timers/Counters/Tachometers 6 1/1IN D Part Number Input Voltage Description CTA4000A 100–240VAC Output 1: Transistor/Relay comb. Output 2: Transistor CTA4000D 24VDC Output 1: Transistor/Relay comb. Output 2: Transistor
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CTA4000A
240VAC
CTA4000D
24VDC
CTA4100A
CTA4100D
12VDC
100mA
CTA4100A
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NEC 2sc4552
Abstract: 2SC4552
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4552
2SC4552
NEC 2sc4552
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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D1316
Abstract: 2SA1744
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is
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2SA1744
2SA1744
D1316
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2SC4551
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4551
2SC4551
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2SC4815
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SC4815
2SC4815
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b 595 transistor
Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
Text: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH31355M
15-j3
b 595 transistor
Mallory Capacitor
transistor b 595
J3 transistor
transistor 15j30
Rogers 6010.5
PH3135-5M
electrolytic Mallory Capacitor
MICROWAVE TEST FIXTURE
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transistor power 5w
Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
Text: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System
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PH2323-5
transistor power 5w
Transistor 5503
transistor 1271
SILICON npn POWER TRANSISTOR c 869
D 595 transistor
transistor J17
2052-5636-02
transistor C 1344
transistor Common Base configuration
j170
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2SC4553
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a
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2SC4553
2SC4553
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TRANSISTOR ZFW
Abstract: zfw 03 capacitor mallory ZFW TRANSISTOR transistor 5w transistor j18 PH2731-5M TT50M50A transistor power 5w transistor 335
Text: an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features ,930 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH2731-5M
40-j12
TT50M50A7
TRANSISTOR ZFW
zfw 03
capacitor mallory
ZFW TRANSISTOR
transistor 5w
transistor j18
PH2731-5M
TT50M50A
transistor power 5w
transistor 335
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882 transistor
Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
Text: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors
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PH2323-5
882 transistor
omni spectra sma
transistor power rating 5w
transistor 882
ATC100A
mallory 25 uF capacitor data sheet
PH2323-5
omni spectra fixture
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2SC3570
Abstract: D1618
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use in drivers such as
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2SC3570
2SC3570
D1618
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MPSA92
Abstract: No abstract text available
Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:
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MPSA92
MPSA92/93
-300V
MPSA92)
-200V
MPSA93)
625mW
MPSA93
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MPSA92
Abstract: No abstract text available
Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:
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MPSA92
MPSA92/93
-300V
MPSA92)
-200V
MPSA93)
625mW
OT-89
MPSA93
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MPSA92
Abstract: MPS-A92
Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:
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MPSA92
MPSA92/93
-300V
MPSA92)
-200V
MPSA93)
625mW
OT-89
MPSA92
MPSA93
MPS-A92
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0
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MH8100F
MH8100F
300/xS,
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MICRO ELECTRONICS ltd transistor
Abstract: No abstract text available
Text: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0
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MH8100F
MH8100F
May-96
MICRO ELECTRONICS ltd transistor
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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MH8100F
Abstract: No abstract text available
Text: MH8100F NPN SILICON POW ER TRANSISTOR D ESC RIPTIO N MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE M AXIM UM RATINGS Collector-Emitter Voltage V BE=0
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MH8100F
MH8100F
May-96
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transistor tic 106
Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
Text: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.
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BCY66
BCY66
60203-Y
transistor tic 106
AF200
transistor tic 106 N
tic 105
Q60203-Y66
tic 246 h
tic 246
tic 245
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transistor c655
Abstract: 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50
Text: AÚK.CA', M an A M P company Radar Pulsed Power Transistor, 5W, 100|is Pulse, 10% Duty 2.9-3.1 GHz PH2931-5M V2.00 Features • • • • • • • • ortn NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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100jis
PH2931-5M
ATC100A
transistor c655
9225 npn transistor
RF NPN POWER TRANSISTOR 3 GHZ 5w
transistor power rating 5w
TRANSISTOR A52
C655
13MM
ATC100A
PH2931-5M
TT50
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transistor 1005 oj
Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Text: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry
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PH3135-5S
ATC100A
transistor 1005 oj
transistor power rating 5w
ATC100A
PH3135-5S
PIN07
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RF NPN POWER TRANSISTOR 3 GHZ 5w
Abstract: No abstract text available
Text: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH3135-5S
TT50M50A
ATC100A
RF NPN POWER TRANSISTOR 3 GHZ 5w
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