transistor bfr96
Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold
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BFR96/D
BFR96
BFR96
BFR96/D*
DEVICEBFR96/D
transistor bfr96
BFR964
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
motorola J50
datasheet for transistor bfr96
BFR96 TRANSISTOR
BFR961
RF TRANSISTOR 1.5 GHZ
BFR96 motorola
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transistor 2n1141
Abstract: MOTOROLA 2n2218 TRANSISTOR 2N1141 beta of 2n2218 2N2218 AN139A
Text: Order this document by AN139A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN139A Understanding Transistor Response Parameters Prepared by: Roy Hejhall Applications Engineering This note explains high–frequency transistor response parameters and discusses their interdependance. Useful
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AN139A/D
AN139A
transistor 2n1141
MOTOROLA 2n2218 TRANSISTOR
2N1141
beta of 2n2218
2N2218
AN139A
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TP3024B
Abstract: motorola rf Power Transistor tp3024
Text: MOTOROLA Order this document by TP3024B/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP3024B The TP3024B is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a Class AB push–pull, high
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TP3024B/D
TP3024B
TP3024B
TP3024B/D*
motorola rf Power Transistor
tp3024
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pm2222a
Abstract: pm2222 pzt222a PZT2222AT1 PZT2222AT3 PZT2907AT1 QS 100 NPN Transistor MARK WAW
Text: MOTOROU Order this document by P~2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Siiicon Planar Epitmia[ Transistor PzT222aTl Motorola PrsferredDevlcs This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is
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2222AT1/D
PzT222aTl
OT-223
PZT2907AT1
2PHXSM57F-1
Pm2222AT1/D
pm2222a
pm2222
pzt222a
PZT2222AT1
PZT2222AT3
PZT2907AT1
QS 100 NPN Transistor
MARK WAW
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3N128
Abstract: No abstract text available
Text: Order this document by 3N128/D MOTOROLA M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR N-CHANNEL MOS FIELD-EFFECT TRANSISTOR . . . designed for VHF amplifier and oscillator applications in com munications equipment.
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3N128/D_
3N128
5000/imhos
3N128/D
3N128/D
3N128
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MRF942
Abstract: NF50
Text: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features
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MRF942/D
MRF942
C68593
MRF942
NF50
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bip 373
Abstract: No abstract text available
Text: Order this data sheet by MJE8503A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information SW ITCHM ODE S e rie s M JE8503A Motorola Preferred Device NPN Bipolar Pow er Transistor The MJE8503A transistor is designed for high voltage, high speed, power switching in
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MJE8503A/D
MJE8503A
JE8503A
X33500-0
bip 373
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sot-223 body marking D K Q F
Abstract: No abstract text available
Text: Order this data sheet by BCP69T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP69T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for
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BCP69T1/D
OT-223
BCP69T1
inch/1000
BCP69T
sot-223 body marking D K Q F
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sot-223 body marking D K Q F
Abstract: No abstract text available
Text: Order this data sheet by BSP62T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the
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BSP62T1/D
OT-223
BSP62T1
inch/1000
BSP62T3
inch/4000
BSP52
BSP62T1
2PHX31198F-0
sot-223 body marking D K Q F
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u92 surface mount u92 transistor
Abstract: t2406 MOTOROLA
Text: Order this data sheet by MMFT2406T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M M FT2406T1 N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high
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MMFT2406T1/D
OT-223
U--92
u92 surface mount u92 transistor
t2406 MOTOROLA
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MR918
Abstract: ar317 MJF16010A AN-952 AM503 AN875 MUR8100 P6302 AN952 F-14E
Text: MOTOROLA SC IME D I XSTRS/R F b3b?2SM 0QCID4M5 0 | Order this data sheet by MJF16010A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA r - 3 3 ~ i/ Designer's Data Sheet MJF16010A Full Pak IMPN Silicon Power Transistor POWER TRANSISTOR 15 AM PERES 500 VOLTS 50 WATTS
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MJF16010A/D
r-33-n
MJF16010A
AN1040.
CS4448
MJF16010A
MR918
ar317
AN-952
AM503
AN875
MUR8100
P6302
AN952
F-14E
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MRF966
Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
Text: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier
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MRFG9661/D
MRFG9661/9661R
MRFG9661/D
MRF966
MRF9661
HP8970A
HP11590B
mrf9661 motorola
TRANSISTOR 318a
Eaton 2075
TRANSISTOR MPS A72
2f 1001
MRFG9661R
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sot-223 body marking D K Q F
Abstract: sot223 p2f
Text: »•üysüM, Order this data sheet by PZT2907AT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed
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PZT2907AT1/D
OT-223
PZT2222AT1
PZT2907AT1
2PHX25151F-3
sot-223 body marking D K Q F
sot223 p2f
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motorola 304
Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
Text: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier
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MRFG9801/D
MRFG9801/9801R
MRFG9801/D
motorola 304
MRFG9801
MRFG9801R
hp89
HP8970A
dual-gate
K31S
HP11590B
Eaton 2075
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ad1172
Abstract: MRA1300-10L C71537
Text: Order this data sheet by MRA1300-10L/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line M icrow ave Linear Pow er Transistor 8.0 dB 1300-1400 MHz 10 WATTS MICROWAVE LINEAR POWER TRANSISTOR . . . designed prim arily for w ideband, large-signal output and driver am plifier stages in
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MRA1300-1OL/D
MRA1300-1
MRA1300-10L
C71537
ad1172
MRA1300-10L
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BSP62T1
Abstract: No abstract text available
Text: Order this data sheet by BSP62T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Small-Signal Darlington Transistor M o to ro la P referre d D evice This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The
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BSP62T1/D
OT-223
BSP62T1
inch/1000
BSP62T3
inch/4000
BSP52T1
BSP62T1
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FT960
Abstract: No abstract text available
Text: Order this data sheet by MMFT960T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent-M ode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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MMFT960T1/D
OT-223
FT960
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mrf226
Abstract: Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838
Text: Order this document by MRF226/D MRF226 The RF Line 13 W — 225 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt large-signal power am plifier applications in com m unication equipm ent operating at 225 MHz. Ideally suited
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MRF226/D
MRF226
MRF226/D
mrf226
Allen-Bradley cb
MRF-226
15MH
K200
8-32NC-2
TRANSISTOR c 5568
TRANSISTOR motorola 838
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by BCP68T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP68T1 NPN Silicon Epitaxial Transistor M o to ro la P referre d D evice This NPN Silicon Epitaxial Transistor is designed for use in low voltage, hi current applications. The device is housed in the SOT-223 package, which is
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BCP68T1/D
OT-223
BCP68T1
inch/1000
BCP68T3
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transistor motorola 114-8
Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF861/D
2PHX33727Q-0
transistor motorola 114-8
MRF861
2n2222 npn transistor
motorola s 114-8
2N2222 SOA
power transistor 2n2222
motorola 114-8
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MPS 4355 transistor
Abstract: MM8009 mps 0737
Text: Order this document by MM8009/D MM8009 The RF Line 0.9 W - 1.0 G H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applica tions in m ilitary and industrial equipment. Suitable for use as output,
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MM8009/D
MM8009
MPS 4355 transistor
MM8009
mps 0737
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Untitled
Abstract: No abstract text available
Text: O rder th is data sheet MOTOROLA b y M SD1819A-RT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon G eneral Purpose A m plifier Transistor MSD1819A-RT1 MSD18 1 9A-ST1 M o to r o la P re fe rre d D e v ic e s This NPN Silicon Epitaxial Planar Transistor is designed for general purpose
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SD1819A-RT1/D
SC-70/SOT-323
7-inch/3000
MSD1819A-RT1
MSD18
2PHX31153F-0
MSD1819A-RT1/D
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mm4018
Abstract: No abstract text available
Text: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli cations in military and industrial equipment. Suitable for use as
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MM4018/D
mm4018
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DIODE 40c 0649
Abstract: MJ100B3D45
Text: M O T O R O L A SC SbE D XSTRS/R F O rder th is data sheet by MJ100B3D45/D b 3 b 7 E S 4 QD^lEflt. D MOTOROLA SEMICONDUCTOR TECHNICAL DATA m € NPN Silicon Power Transistor Module Energy M anagem ent Series DUAL DARLINGTON POWER TRANSISTOR 100 AMPERES 450 VOLTS
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MJ100B3D45/D
14A-02
14A-02
MJ100B3D45
CM694
DIODE 40c 0649
MJ100B3D45
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