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    TRANSISTOR 502 Search Results

    TRANSISTOR 502 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 502 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9275 transistor

    Abstract: transistor k 208 MPSA42 MPSA42 multicomp
    Text: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.


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    PDF MPSA42 9275 transistor transistor k 208 MPSA42 MPSA42 multicomp

    MPSA42

    Abstract: No abstract text available
    Text: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.


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    PDF MPSA42 MPSA42

    nec 2561

    Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to


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    PDF 2SC5337 2SC5337 2SC3356 nec 2561 NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356

    BLV97CE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171


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    PDF BLV97CE OT171 BLV97CE

    BLV98CE

    Abstract: MDA459 MDA456
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171


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    PDF BLV98CE OT-171 BLV98CE MDA459 MDA456

    Transistor C G 774 6-1

    Abstract: transistor 2N4033 2N4033
    Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53


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    PDF 2N4033 Transistor C G 774 6-1 transistor 2N4033 2N4033

    Untitled

    Abstract: No abstract text available
    Text: 2N6058 and 2N6059 Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/502 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 12 amps and is military qualified up to a JANTXV


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    PDF 2N6058 2N6059 MIL-PRF-19500/502 O-204AA O-204AA T4-LDS-0307,

    2SC5005

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    PDF 2SC5005 2SC5005

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


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    PDF NE58219 2SC5004 2SC5004 NE58219-A 2SC5004-A NE58219-T1-A 2SC5004-T1-A perfor516

    NEC JAPAN 237 521 02

    Abstract: transistor zo 607 2SC5004
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    PDF 2SC5004 2SC5004 NEC JAPAN 237 521 02 transistor zo 607

    ZO 103 MA 75 623

    Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
    Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


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    PDF 2SC5008 2SC5008 ZO 103 MA 75 623 ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452

    NEC JAPAN 282 110 01

    Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    PDF 2SC4570 2SC4570 SC-70) 2SC4570-T1 NEC JAPAN 282 110 01 NEC 2561 TYP 513 309 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261

    transistor 502

    Abstract: transistor BF 502 transistor BF 506 BF502
    Text: ESC D • ÔSBSbQS ÛQQ45GS ■SIEG ^ 7^-î/- z * NPN Silicon RF Transistor BF502 SIEMENS AKT IEN GE SE LL SC H AF >4505 0 - | BF 502 is an NPN silicon planar RF transistor in TO 92 plastic package 1 0 A 3 D I N 4 1 868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers, and VHF


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    PDF 62702-F572 100MHz) transistor 502 transistor BF 502 transistor BF 506 BF502

    sb30-03p

    Abstract: C51ST
    Text: Ordering num ber: E N 5028 No.5028 SA% YOi // _ FX401 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter F eatures • Complex type of a low saturation voltage, high speed switching and large current PNP transistor and


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    PDF FX401 FX401 2SB1121 SB30-03P, 300mA 750mm2X sb30-03p C51ST

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    ZO 107 MA

    Abstract: 341S
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low


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    PDF 2SC5009 2SC5009 ZO 107 MA 341S

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the


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    PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T2

    2sc4571

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    PDF 2SC4570 2SC4570 SC-70) 4570-T PACK878

    transistor 1211

    Abstract: transistor su 312 transistor zo 109
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    PDF 2SC5005 2SC5005 Collect69 transistor 1211 transistor su 312 transistor zo 109

    TRANSISTOR 2SC 2581

    Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS


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    PDF 2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733

    IC SEM 2105

    Abstract: 3771 nec
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


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    PDF 2SC5008 2SC5008 IC SEM 2105 3771 nec

    928 606 402 00

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low


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    PDF 2SC5008 2SC5008 928 606 402 00