Untitled
Abstract: No abstract text available
Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line
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NTE3082
NTE3082
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transistor VCE 6000V
Abstract: dual infrared diode Infrared Emitting Diode NTE3082
Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3082 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual−in−line
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NTE3082
NTE3082
transistor VCE 6000V
dual infrared diode
Infrared Emitting Diode
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NTE3082
Abstract: NPN Darlington transistor transistor VCE 6000V
Text: NTE3082 Optoisolator NPN Darlington Transistor Output Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.
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NTE3082
NTE3982
NTE3082
NPN Darlington transistor
transistor VCE 6000V
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6739 Issued Date : 1994.05.18 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.
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HE6739
HSC4242
HSC4242
O-220
183oC
217oC
260oC
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M38527
Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
Text: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)
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PA111
O-202,
O-220
HC-18/U,
HC-43/U
HC-49/U
CI-192-028
M38527
M38527/2-05D
M38527/01-036D
A55485/02-032D
M38527/06-022D
M38527/3-01D
M38527/02-001D
M38527/02-005D
M38527/03-015N
M38527/1-030D
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NTE398
Abstract: transistor VCE 6000V
Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3981 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE3081
NTE3981
NTE398
transistor VCE 6000V
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dual infrared transistor
Abstract: dual infrared diode dual Phototransistor NTE3081 transistor VCE 6000V
Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual−in−line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE3081
NTE3081
dual infrared transistor
dual infrared diode
dual Phototransistor
transistor VCE 6000V
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NTE3081
Abstract: transistor VCE 6000V
Text: NTE3081 Optoisolator NPN Transistor Output Description: The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dual–in–line packages. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE3081
NTE3081
transistor VCE 6000V
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irf740 mosfet
Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF740
O-220AB
irf740 mosfet
power MOSFET IRF740
transistor IRF740
TA17424
IRF740
TB334
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HEXFET Power MOSFET designer manual
Abstract: No abstract text available
Text: UCC1919 UCC2919 UCC3919 PRELIMINARY 3V to 8V Hot Swap Power Manager FEATURES DESCRIPTION • Precision Fault Threshold The UCC3919 family of Hot Swap Power Managers provide complete power management, hot swap, and fault handling capability. The UCC3919 features a duty ratio current limiting technique, which provides peak load capability while limiting the average power dissipation of the external pass transistor during fault conditions. The
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UCC1919
UCC2919
UCC3919
UCC3919
HEXFET Power MOSFET designer manual
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Untitled
Abstract: No abstract text available
Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power
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UC1725
UC2725
UC3725
UC1724,
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6 pin DIL And Gate
Abstract: 92048 UC3725 circuit for using uc1725 DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725
Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power
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UC1725
UC2725
UC3725
UC1725
UC1724,
UDG-92052
UDG-92053
6 pin DIL And Gate
92048
UC3725
circuit for using uc1725
DIL-16
PLCC-20
SOIC-16
UC1724
UC2725
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circuit for using uc1725
Abstract: No abstract text available
Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power
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UC1725
UC2725
UC3725
UC1724,
circuit for using uc1725
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92048
Abstract: UC3725N DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725 UC3725
Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power
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UC1725
UC2725
UC3725
UC1725
UC1724,
92048
UC3725N
DIL-16
PLCC-20
SOIC-16
UC1724
UC2725
UC3725
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92048
Abstract: DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725 UC3725 6 pin DIL And Gate
Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power
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UC1725
UC2725
UC3725
UC1725
UC1724,
92048
DIL-16
PLCC-20
SOIC-16
UC1724
UC2725
UC3725
6 pin DIL And Gate
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Untitled
Abstract: No abstract text available
Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF740
O-220AB
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IRF540 n-channel MOSFET BATTERY CHARGER
Abstract: 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger 48V to 12V buck transformer RF520 HEXFET Power MOSFET designer manual
Text: UNITRODE CORPORATION U-167 UC3578 TELECOM BUCK CONVERTER EVALUATION BOARD By Mark Dennis Unitrode Corporation ABSTRACT This application note describes a simple solution for a buck converter operating from an input of 15V to 72V with an N channel MOSFET switching transistor. Using this switch configuration requires a gate potential higher than the input
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U-167
UC3578
UC3S78
48Vions
Q1/95
IRF540 n-channel MOSFET BATTERY CHARGER
1rf530
IRF540 irf520 comparison
UNITRODE applications handbook
UNITRODE product and applications handbook
H. Dean Venable
schematic diagram 72vdc battery charger
48V to 12V buck transformer
RF520
HEXFET Power MOSFET designer manual
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