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    TRANSISTOR 4158 Search Results

    TRANSISTOR 4158 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 4158 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Agilent AT-41586 Low Cost General Purpose Transistors Data Sheet Features The AT-41586 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. 86 Plastic Package


    Original     		PDF AT-41586 AT41586 5965-8908E 5989-2651EN

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma
    Text: AT-41586 Low Cost General Purpose Transistors Data Sheet Description Features Avago’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The


    Original     		PDF AT-41586 AT-41586 5965-8908E 5989-2651EN AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma

    AT-41586

    Abstract: S21E TRANSISTOR zo 109 ma 41586
    Text: AT-41586 Low Cost General Purpose Transistors Data Sheet Description Features Avago’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron emitter-to-emitter


    Original     		PDF AT-41586 AT-41586 5989-2651EN AV02-1459EN S21E TRANSISTOR zo 109 ma 41586

    cep61a3

    Abstract: No abstract text available
    Text: CEP61A3/CEB61A3 Jan. 2003 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 60A , RDS ON =12mΩ @VGS=10V. RDS(ON)=19mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		PDF CEP61A3/CEB61A3 O-220 O-263 cep61a3

    transistor GW 93 H

    Abstract: 100-PIN
    Text: LH51V1032C4 PRELIMINARY 32K x 32 Pipelined Burst SRAM +3.3 V Supply, Fully Registered Inputs, Outputs, and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 8 and 9 ns The Sharp Synchronous SRAM family employs highspeed, low-power CMOS designs using a thin-film transistor memory cell. Sharp SRAMs are fabricated using


    Original     		PDF LH51V1032C4 100TQFP 100-pin LH51V1032C4-15 51V1032C4-11 transistor GW 93 H

    AT-42010

    Abstract: S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz


    Original     		PDF AT-42010 AT-42010 RN/50 S21E

    AT41586

    Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 AT41586 5965-8908E AT-41586-BLK AT-41586-TR1 S21E

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E 41586
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 5963-7303E 5965-8908E AT-41586-BLK AT-41586-TR1 S21E 41586

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H IL I P S / D I S C R E T E BSE D Jl ftSHlHl QQ17S73 1 • BFQ51C T - 3 /- / 7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E D micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,


    OCR Scan     		PDF QQ17S73 BFQ51C BFP90A. htS3131

    nds9942

    Abstract: No abstract text available
    Text: National & Semiconductor" May 1996 NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS9942 nds9942

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical PldB at 2.0 GHz 20.5dBmTypicalP1 fflat4.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz


    OCR Scan     		PDF AT-42010 AT-42010 Rn/50

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    Z72A

    Abstract: No abstract text available
    Text: BUZ72A O HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor A ug ust 19 91 Features Package T0-220AB • 9 A, 100V TOP VIEW • rDS on = 0 .2 5 il • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF BUZ72A T0-220AB BUZ72A Z72A

    Untitled

    Abstract: No abstract text available
    Text: International IO R Rectifier PD-91791 IRG4IBC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features c • D esig n ed expre ss ly for S w itc h -M o d e P o w er Su pp ly and P F C p o w er factor correction ? applications • 2 .5 k V , 6 0s insulation voltage


    OCR Scan     		PDF PD-91791 IRG4IBC30W

    GG-03 diode

    Abstract: 416-1 to-220 P8060L 60IDS transistor c 4161
    Text: t u I ' C EP8 0 6 0 L/C EB 8 0 6 0 L PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 8 0 A , R ds ON =9.0 itiQ Rds(on)=12.0itiQ @ V g s =1 0 V . @ Vg s= 5V. • Super high dense cell design for extremely low R ds(on>.


    OCR Scan     		PDF CEP8060L/CEB8060L O-220 O-263 P8060L/C B8060L GG-03 diode 416-1 to-220 P8060L 60IDS transistor c 4161

    q2t2905

    Abstract: No abstract text available
    Text: TYPE Q2T2905 QUAD P-N-P SILICON TRANSISTOR B U L L E T I N N O . D L -S 7 3 1 1 7 0 2 , A P R I L 1 9 7 2 - R E V I S E D M A R C H 1 97 3 D ESIGN ED FOR MEDIUM-POWER SWITCHING AND G E N E R A L PURPOSE A M P LIFIER APPLICATIONS • High Breakdown Voltage Combined


    OCR Scan     		PDF Q2T2905

    SMW20P10

    Abstract: No abstract text available
    Text: I T S f c a n ix SMW20P10 Jm M in c o rp o ra te d P-Channel Enhancement Mode Transistor T O -2 4 7 AD T O P V IE W PRODUCT SUMMARY V BR DSS (V) r DS(ON) ( il) (A) •d -1 0 0 0 .2 0 -2 0 1 GATE 2 DRAIN 3 SOURCE U U U 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1


    OCR Scan     		PDF SMW20P10 SMW20P10

    AT41586-TR1

    Abstract: uj3a
    Text: wem HEW LETT* ISSI PACKARD Low Cost General Purpose Transistors Technical Data AT-41586 Features • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB typical at 2 GHz • Low Cost Surface Mount


    OCR Scan     		PDF AT-41586 AT-41586 AT-41586-TR1 6903-73O3E AT41586-TR1 uj3a

    Untitled

    Abstract: No abstract text available
    Text: What HEW LETT* mitiM PACKARD Low C ost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount


    OCR Scan     		PDF AT-41586 AT-41586