NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
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TRANSISTOR 404
Abstract: 14005 SFT4959
Text: PRELIMINARY SFT4959 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 30mA 18 VOLTS PNP TRANSISTOR Designer's Data Sheet FEATURES: • • • • PNP Silicon Annular Transistor High Speed High Frequency
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SFT4959
10Vdc)
10Vdc
TRANSISTOR 404
14005
SFT4959
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TR0011A
Abstract: Motorolla transistor replacement book 400mAdc
Text: PRELIMINARY SFT10000/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET APPLICATION NOTES: SFT10000 Darlington Transistor is direct replacement of Motorolla
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SFT10000/3
SFT10000
10ADC)
10VDC,
30VDC
10ADC,
400mADC)
250VDC
400mADC,
TR0011A
Motorolla transistor replacement book
400mAdc
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2n3439ua
Abstract: SFT343 SMD.22
Text: SFT3439S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 A /450 Volts NPN Switching Transistor DESIGNER’S DATA SHEET SMD.22 Features: • Switching Transistor
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SFT3439S
2N3439UA
MIL-PRF-19500
TR0086A
2n3439ua
SFT343
SMD.22
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SFT1192
Abstract: No abstract text available
Text: SFT6800S.5 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 2 A /500 Volts NPN switching Transistor DESIGNER’S DATA SHEET Features: SMD.5 • Switching Transistor
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SFT6800S
SFT1192
MIL-PRF-19500
TR0088A
SFT1192
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NPN 1.5 AMPS POWER TRANSISTOR
Abstract: SFT1192
Text: SFT6800S.5 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 2 A /500 Volts NPN switching Transistor DESIGNER’S DATA SHEET Features: SMD.5 • Switching Transistor
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SFT6800S
SFT1192
300sec,
MIL-PRF-19500
TR0088B
NPN 1.5 AMPS POWER TRANSISTOR
SFT1192
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SFT343
Abstract: No abstract text available
Text: SFT3439S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 A /450 Volts NPN Switching Transistor DESIGNER’S DATA SHEET SMD.22 Features: • Switching Transistor
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SFT3439S
2N3439UA
MIL-PRF-19500
TR0086A
SFT343
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2SC5005
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
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JLN 2003
Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
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2SC4226
R09DS0022EJ0200
2SC4226
S21e2
2SC4226-A
2SC4226-T1
JLN 2003
2SC4226 APPLICATION NOTES
newmarket transistor
2SC4226-T1
2SC4226-T1-A
2SC4226-A
Korea Electronics TRANSISTOR
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2SA1646
Abstract: No abstract text available
Text: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,
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2SA1646
2SA1646-Z
R07DS0048EJ0200
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2SA1646
Abstract: 2SA1646-Z NEW TRANSISTOR
Text: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,
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2SA1646
2SA1646-Z
R07DS0048EJ0200
2SA1646-Z
NEW TRANSISTOR
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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automotive ignition tip162
Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —
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BU323AP
BU323AP
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
automotive ignition tip162
bc337 cross-reference
BU108
BD390 cross reference
replacement transistor BC337
BUX48A
2SD1815 "cross reference"
TIP102 Darlington transistor
Motorola MJ15022
MJ1000
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MJE15020
Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment
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MJE340
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
MJE15020
DTS423
mje15033 replacement
2SC243
BD388-5
2SC1826
BD263
2SC1903
SE9302
2SA698
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BSY59
Abstract: TRANSISTOR W 59
Text: BSY59 Not for new developm ent PNP Transistor for switching applications The transistor B S Y 59 is an epitaxial silicon planar PNP transistor in a plastic case 11 A 3 DIN 41869 SO T-25 . The transistor is especially designed for use as switch of medium speed as well as for universal application.
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BSY59
BSY59
-S157
TRANSISTOR W 59
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
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SN 4931
Abstract: 2sc 3476 2SC 1885 SN 4931 N
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5005
2SC5005
SN 4931
2sc 3476
2SC 1885
SN 4931 N
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TPM4040
Abstract: ITT 1N4007 BALLAST MOTOROLA TRANSISTOR UO 112 1N4007 motorola rf Power Transistor 1N4007, ITT 1N4007 DC COMPONENTS tantal PACKAGE 1N4007 itt
Text: MOT OROL A SC XSTRS/R F 4bE D • f c>3t , 72S4 GO^Sa^M fi « f l O T h ~T=-3 3 ~ 3 -~ l MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA TPM 4040 The RF Line UHF Power Transistor The TPM4040 is an internally matched transistor in a push-pull package specially
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TPM4040
1N4007
TPM4040
T-33-27
ITT 1N4007
BALLAST MOTOROLA
TRANSISTOR UO 112
motorola rf Power Transistor
1N4007, ITT
1N4007 DC COMPONENTS
tantal PACKAGE
1N4007 itt
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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2sc 103 transistor
Abstract: transistor BD 430
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in
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Q62702-D1069
-T-33-OS
fl23SbQS
BD429
2sc 103 transistor
transistor BD 430
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BD429
Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in
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fl23Sfc
Q62702-D1069
BD429
fnb33
D1069
Q62702-D1069
fcdc
2SC 102
bD 106 transistor
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