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    TRANSISTOR 38W Search Results

    TRANSISTOR 38W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 38W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    212J

    Abstract: rd30hvf
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 RD30HVF1 175MHz RD30HVF1-101 212J rd30hvf

    A 1469 mosfet

    Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin

    RD30HVF1

    Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 RD30HVF1-101 rf power transistor rd30hvf1 100OHM

    RD30HVF1

    Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet

    MITSUBISHI RF POWER MOS FET

    Abstract: 071J
    Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HVF1 175MHz RD30HVF1 RD30HVF1-101 Oct2011 MITSUBISHI RF POWER MOS FET 071J

    A 1469 mosfet

    Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM mosfet 800 v MITSUBISHI RF POWER MOS FET

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101

    transistor D 1666

    Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 transistor D 1666 MITSUBISHI RF POWER MOS FET RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET

    1299 mosfet

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HUF1 520MHz RD30HUF1 RD30HUF1-101 Oct2011 1299 mosfet

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101

    100OHM

    Abstract: RD30HUF1 IDQ10
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz 100OHM IDQ10

    Mitsubishi transistor C 1588

    Abstract: S 170 MOSFET TRANSISTOR RF Transistor s-parameter 30W RD30HUF1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz Mitsubishi transistor C 1588 S 170 MOSFET TRANSISTOR RF Transistor s-parameter 30W

    100OHM

    Abstract: RD30HUF1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 100OHM

    transistor 636 mitsubishi

    Abstract: rd30 100OHM RD30HUF1 RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 transistor 636 mitsubishi rd30 100OHM RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734

    NTE480

    Abstract: transistor 38W
    Text: NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.


    Original     		PDF NTE480 512MHz NTE480 512MHz 470MHz transistor 38W

    2N7081

    Abstract: No abstract text available
    Text: 2N7081 Siliconix NĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.15 13 TOĆ257AB Hermetic Package D G Case Isolated S G D S NĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF 2N7081 O257AB P36736Rev. 2N7081

    LM3886

    Abstract: datasheet lm3886 LM3886 circuit diagram LM3886TF lm3886t lm3886 an lm3886 output circuit LM3886TF circuits LM3886T IC 0118
    Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from


    Original     		PDF LM3886 20kHz. LM3886, datasheet lm3886 LM3886 circuit diagram LM3886TF lm3886t lm3886 an lm3886 output circuit LM3886TF circuits LM3886T IC 0118

    datasheet lm3886

    Abstract: LM3886 lm3886tf LM3886 circuit diagram LM3886T datasheet LM3886T operational amplifier discrete schematic 12v class d amplifier 40W LM3886TF circuits lm3886t with application notes
    Text: LM3886 Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w Mute General Description Features The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4X load and 38W into 8X with 0 1% THD a N from


    Original     		PDF LM3886 LM3886 20-3A datasheet lm3886 lm3886tf LM3886 circuit diagram LM3886T datasheet LM3886T operational amplifier discrete schematic 12v class d amplifier 40W LM3886TF circuits lm3886t with application notes

    LM3886

    Abstract: LM3886T LM3886T IC lm3886 output circuit datasheet lm3886 LM3886TF TA11B TF11B DS011833 lm3886 application note
    Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD + N from


    Original     		PDF LM3886 LM3886, LM3886T LM3886T IC lm3886 output circuit datasheet lm3886 LM3886TF TA11B TF11B DS011833 lm3886 application note

    LM3886

    Abstract: datasheet LM3886T LM3886 circuit diagram LM3886T LM3886T IC 200 watts audio power amp transistors LM3886TF lm3886 output circuit LM388 lm3886 Data sheet
    Text: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from


    Original     		PDF LM3886 20kHz. LM3886, datasheet LM3886T LM3886 circuit diagram LM3886T LM3886T IC 200 watts audio power amp transistors LM3886TF lm3886 output circuit LM388 lm3886 Data sheet

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    transistor rf m 9860

    Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
    Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for


    OCR Scan     		PDF 520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490

    SOT123 Package

    Abstract: SOT123 BLF244 International Power Sources SOT-123
    Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability


    OCR Scan     		PDF BLF244 711002b OT123 7110fi5b T-39-11 SOT123 Package SOT123 BLF244 International Power Sources SOT-123