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    TRANSISTOR 358 TO3 Search Results

    TRANSISTOR 358 TO3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 358 TO3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3442

    Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
    Text: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage


    Original     		PDF 2N3442 2N3442 transistor 2n3442 npn 9016 transistor transistor 9016 npn

    high power transistor

    Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
    Text: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.


    Original     		PDF 2N3772 high power transistor transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A

    power switching 10 amp 60V

    Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
    Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).


    Original     		PDF MJ10012 power switching 10 amp 60V MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts

    Transistor 358 to3

    Abstract: 2N5038 20A npn transistor 7333
    Text: 2N5038 Power Transistor Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features: • High speed -tf = 0.5µs Maximum .


    Original     		PDF 2N5038 Transistor 358 to3 2N5038 20A npn transistor 7333

    2N6438

    Abstract: No abstract text available
    Text: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.


    Original     		PDF 2N6438 2N6438

    Transistor C G 774 6-1

    Abstract: transistor 2N4033 2N4033
    Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53


    Original     		PDF 2N4033 Transistor C G 774 6-1 transistor 2N4033 2N4033

    200 Ampere power transistor

    Abstract: 2n3055 malaysia 2n3055 collector characteristic curve 2N3055 curve 2N3055 NPN Transistor 2N3055 2n3055 TRANSISTOR 530 TRANSISTOR 2n3055 2n3055 Power Transistor NPN
    Text: Silicon Power Transistor Features: • • • • Power dissipation - PD = 115W at TC = 25°C. DC current gain hFE = 20 ~ 70 at IC = 4.0A. VCE Sat = 1.1V (maximum) at IC = 4.0 A, IB = 400mA. Designed for use in general-purpose amplifier and switching applications.


    Original     		PDF 400mA. 2N3055 200 Ampere power transistor 2n3055 malaysia 2n3055 collector characteristic curve 2N3055 curve 2N3055 NPN Transistor 2N3055 2n3055 TRANSISTOR 530 TRANSISTOR 2n3055 2n3055 Power Transistor NPN

    BUX80

    Abstract: 928 transistor NPN Transistor 50A 400V
    Text: BUX80 Power Transistor High Voltage Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuit, motor control, solenoid and relay drivers. Features: • Collector-Emitter Sustaining VoltageVCEO sus = 400V (Minimum).


    Original     		PDF BUX80 BUX80 928 transistor NPN Transistor 50A 400V

    MJ10004

    Abstract: MJ-10004 OB 2268 darlington power transistor 10a
    Text: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line


    Original     		PDF MJ10004 MJ10004 MJ-10004 OB 2268 darlington power transistor 10a

    BUY69

    Abstract: BUY69A NPN Transistor VCEO 1000V
    Text: BUY69A High Voltage Power Transistor High Voltage Power Switch are designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-Emitter Sustaining Voltage-100mA VCEO sus = 400V (Minimum).


    Original     		PDF BUY69A Voltage-100mA BUY69 BUY69A NPN Transistor VCEO 1000V

    Transistor C G 774 6-1

    Abstract: 2N3440
    Text: 2N3440 High Voltage Transistor Features: • NPN High Voltage Silicon Transistor. • High Voltage Silicon Planar Transistors used in High Voltage and High Power Amplifier Applications. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74


    Original     		PDF 2N3440 Transistor C G 774 6-1 2N3440

    BUW12A

    Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V
    Text: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.


    Original     		PDF BUW12A BUW12A. BUW12A transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V

    MJ4502

    Abstract: MJ4502 EQUIVALENT transistor mj4502 A3105
    Text: MJ4502 Power Transistor High-Power PNP Silicon Transistor is used as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 - 100 at IC = 7.5A.


    Original     		PDF MJ4502 750mA. MJ4502 MJ4502 EQUIVALENT transistor mj4502 A3105

    BU208D

    Abstract: NPN Transistor 1500V 20a H 9645
    Text: BU208D Horizontal Deflection Transistor NPN Silicon Horizontal Defection Transistors with integrated damper diodes are specifically designed for use in large screen colour deflection circuits. Features: • VCES = 1500V VCEO sus = 700V (Minimum). • Low Saturation


    Original     		PDF BU208D BU208D NPN Transistor 1500V 20a H 9645

    mj10021

    Abstract: ob 2268 60 amp npn darlington power transistors MJ1002
    Text: MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.


    Original     		PDF MJ10021 mj10021 ob 2268 60 amp npn darlington power transistors MJ1002

    BUX47

    Abstract: 7333 A
    Text: BUX47 Power Transistor NPN Silicon Power Transistors are designed for use in high-speed switching and linear amplifier applications. Features: • High Current Capabilities. • Fast Turn-On and Turn Off. • Power Dissipation -PD = 125W at TC = 25°C. • DC Current Gain


    Original     		PDF BUX47 BUX47 7333 A

    BU208A

    Abstract: No abstract text available
    Text: BU208A Power Transistor CRT Deflection Transistors Feature: • NPN bipolar, silicon planar power transistors for use in horizontal deflection circuits of CRTs. Suitable for medium, high, and very high resolution monochrome and colour applications. TO-3 Metal Can Package


    Original     		PDF BU208A BU208A

    mj11016

    Abstract: transistor MJ11016 pin diagram of ic 4066 npn darlington transistor 200 watts Transistor 358 to3 transistor 358 to-3 358 transistor IC 4066 PIN DIAGRAM
    Text: MJ11016 designed for use as output devices in complementary general purpose amplifier applications. Features: • High gain darlington performance. • High DC current gain hFE = 1000 Minimum at lc = 20 A. • Monolithic construction with built-in base-emitter shunt resistor.


    Original     		PDF MJ11016 13/08/racy mj11016 transistor MJ11016 pin diagram of ic 4066 npn darlington transistor 200 watts Transistor 358 to3 transistor 358 to-3 358 transistor IC 4066 PIN DIAGRAM

    MJ802

    Abstract: Transistor 358 to3 200 watt audio amplifier with ic high power transistor transistor 9016 npn transistor MJ802
    Text: MJ802 High Power Transistor For use as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 -100 at IC = 7.5A • Excellent Safe Operating Area


    Original     		PDF MJ802 750mA. MJ802 Transistor 358 to3 200 watt audio amplifier with ic high power transistor transistor 9016 npn transistor MJ802

    2N6054

    Abstract: 2N6056
    Text: 2N6054/2N6056 Darlington Transistors Features: • General-purpose power amplifier and low frequency switching applications. • Low Collector-Emitter Saturation Voltage VCE SAT = 2.0V (Maximum) at IC = 4.0A = 3.0V (Maximum) at IC = 8.0A • Monolithic construction with Built-in Base-Emitter Shunt Resistors.


    Original     		PDF 2N6054/2N6056 2N6056 2N6054 2N6054 2N6056

    NPN power transistor 15A amperes

    Abstract: transistor 2N5884 2N5886 COMPLEMENTARY SILICON POWER TRANSISTORS transistor equivalents 2n5884 2N5884 2v31
    Text: 2N5884 & 2N5886 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 15A. • Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A.


    Original     		PDF 2N5884 2N5886 NPN power transistor 15A amperes transistor 2N5884 2N5886 COMPLEMENTARY SILICON POWER TRANSISTORS transistor equivalents 2n5884 2N5884 2v31

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2n3773 power Amplifier 2N3773 2N3773 transistor 2N3773 applications 2n6609 2N3773 applications download 2N3773 equivalent 2N3773 voltage regulator
    Text: 2N3773, 6609 Complementary Power Transistors The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators, solenoid drivers and dc to dc converters or inverters. Features:


    Original     		PDF 2N3773, 2N3773 2N6609 2N3773 2N6609 2N3773 NPN Audio Power AMP Transistor 2n3773 power Amplifier 2N3773 transistor 2N3773 applications 2N3773 applications download 2N3773 equivalent 2N3773 voltage regulator

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent
    Text: MJ11032, 11033 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain: hFE = 1000 Minimum at IC = 25A,


    Original     		PDF MJ11032, pin diagram of ic 4066 ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent

    2n3055 malaysia

    Abstract: DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
    Text: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE sat = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.


    Original     		PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve