transistor 342 G
Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω
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O-218
C67078-S3135-A2
transistor 342 G
buz 342 G
C67078-S3135-A2
transistor 342 pf
buz 342 transistor
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C67078-S3135-A2
Abstract: transistor 342 G BUZ342
Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω
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O-218
C67078-S3135-A2
C67078-S3135-A2
transistor 342 G
BUZ342
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GA200SA60SP
Abstract: No abstract text available
Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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GA200SA60SP
OT-227
2002/95/EC
18-Jul-08
GA200SA60SP
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CGC SWITCH
Abstract: transistor 342 pf GA200SA60SP
Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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GA200SA60SP
OT-227
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
CGC SWITCH
transistor 342 pf
GA200SA60SP
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smps tig welding
Abstract: transistor 342 G GA200SA60SP
Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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GA200SA60SP
OT-227
2002/95/EC
18-Jul-08
smps tig welding
transistor 342 G
GA200SA60SP
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GA200SA60SP
Abstract: GA200SA60S
Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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GA200SA60SP
OT-227
E78996
2002/95/EC
11-Mar-11
GA200SA60SP
GA200SA60S
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GA200SA60SP
Abstract: smps tig welding transistor 342 G
Text: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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PDF
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GA200SA60SP
OT-227
2002/95/EC
18-Jul-08
GA200SA60SP
smps tig welding
transistor 342 G
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Untitled
Abstract: No abstract text available
Text: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available
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VS-GA250SA60S
VS-GA200SA60SP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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VN45350T
Abstract: VN0603T 2N7001 VN45350 vn4012B
Text: H Siliconix incorporated N-CHANNEL V BR DS PART# (V) DS(ON) VGS(th) tON Ciss (V) (ns) (PF) ID (mA) PD (H) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 30 30 10 10 10 10 10 10 38 38 35 35 16 16 35 35 0.85 0.85 0.46 0.46 0.23 0.23 0.40 0.40 2 2 2 2 2 2 2 2 3.0 3.0 2.5 2.5
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14-PIN
VQ1001J
VQ1001P
VQ1004P
VQ1004J
VQ1000J
VQ1000P
VQ1006P
VQ1006J
OT-23
VN45350T
VN0603T
2N7001
VN45350
vn4012B
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J645
Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
Text: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,
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2010B
UPB2010B
30dBc
130mA
100oC
175oC
J645
J626
transistor J626
ultrarf
UPB2010B
J626 Transistor
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2N5643
Abstract: No abstract text available
Text: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in
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2N5643
30Vdc.
2N5643
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buz 342 G
Abstract: transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog
Text: SIEMENS BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Ultra low on-resistance • 175°C operating temperature Type BUZ 342 Vds 50 V h 60 A flbS on Package Ordering Code 0.01 Q TO-218 AA C67078-S3135-A2
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O-218
C67078-S3135-A2
O-218AA
buz 342 G
transistor 342 G
transistor 342 pf
buz 342 transistor
FR 220
ph c5 diode
siemens fog
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Untitled
Abstract: No abstract text available
Text: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n
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O-218AA
C67078-S3135-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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Untitled
Abstract: No abstract text available
Text: Philips Components D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e October 1990 FEATURES • Direct interface to C-M O S, TTL, etc., due to low threshold voltage • High speed switching • No secondary breakdown BSN 274/BSN 274A
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274/BSN
3hD30
BSN274/BSN274A
bb53T31
003b031
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Untitled
Abstract: No abstract text available
Text: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri*10kQ, R2*47kQ) • Complement to KSR2006 ABSOLUTE MAXIMUM RATINGS {Tft=25t:)
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KSR1006
KSR2006
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TRANSISTOR D 471
Abstract: KSR1205 KSR2205 J500 INC7-35-H1ME
Text: SA M S U N G SEM IC ONDUCTOR INC7-36-1114E D | 71fc.mM2 0007071 3 | KSR1205 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor ( R ^ ^ K O , R,=10Kfl)
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INC7-35-H1ME
D0D7071
KSR1205
KSR2205
O-92S
71bm42
TRANSISTOR D 471
KSR2205
J500
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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Untitled
Abstract: No abstract text available
Text: BS107A y V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and
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BS107A
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2SD1864
Abstract: No abstract text available
Text: 2SD1864 Transistor, NPN Features Dimensions Units : mm • a v a ila b le in A T V T V 2 p a c k a g e • lo w c o lle c to r s a tu ra tio n v o lta g e , ty p ic a lly V CE(sat) = 0.5 V at lc / l B = 2 A /0.2 A • c o m p le m e n ta ry p a ir w ith 2 S B 1 2 4 3
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2SD1864
2SD1864
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Untitled
Abstract: No abstract text available
Text: KSA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSC945 • Collector-Base Voltage V TO-92 cbo = -8 °v ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSA733
KSC945
Curr100Hz,
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Untitled
Abstract: No abstract text available
Text: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FR EQ U EN C Y POW ER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB1015 A B S O LU T E MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage Collector Emitter Voltage
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KSD1406
KSB1015
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HT1 SOT363
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 FEATURES • T ransistors w ith built-in bias resistors R1 and R2 typ. 10 k£2 each • No m utual interference betw een the transistors 6 • S im plification of circu it design
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PUMH11
SC-88)
SC-88
OT363
HT1 SOT363
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Untitled
Abstract: No abstract text available
Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.
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BUZ45A_
bb53T31
0014bS7
T-39-13
T-39-13
D014bST
BUZ45A
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Untitled
Abstract: No abstract text available
Text: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220F • Low Collector Emitter Saturation Voltage • Complement to KSB1015 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage
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KSD1406
KSB1015
O-220F
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