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    TRANSISTOR 3202 1 A 60 Search Results

    TRANSISTOR 3202 1 A 60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3202 1 A 60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 3205 equivalent

    Abstract: data sw 3205 microwave Duplexer pdc 140m FET 3205 LM3200 LM3202 LM3203 LM3204 LM3205
    Text: Powering RF Power Amplifiers with Magnetic Buck Converters Mathew Jacob Hello and welcome to today’s National Semiconductor Online Seminar. I’m Michelle Miller and I will be your host. Before we begin, I’d like to go over the operation of your seminar


    Original     		PDF

    HD6473214P16

    Abstract: HD6473217TF16 BC2 373 Hitachi DSA0044
    Text: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 29.08.1996 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		PDF H8/3217 H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 DP-64S) FP-64A) TFP-80C) HD6473214P16 HD6473217TF16 BC2 373 Hitachi DSA0044

    Hitachi DSA00771

    Abstract: No abstract text available
    Text: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 29.08.1996 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		PDF H8/3217 H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 DP-64S) FP-64A) TFP-80C) Hitachi DSA00771

    block diagram of mri machine

    Abstract: HD6473214P16 STATES10
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF DP-64S) FP-64A) TFP-80C) block diagram of mri machine HD6473214P16 STATES10

    Hitachi DSA0087

    Abstract: HD6473217C16 HD6433202 12P10 HD6473217F16 HD6473217TF16
    Text: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 8/12/97 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		PDF H8/3217 H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 DP-64S) FP-64A) TFP-80C) Hitachi DSA0087 HD6473217C16 HD6433202 12P10 HD6473217F16 HD6473217TF16

    Hitachi DSA0057

    Abstract: No abstract text available
    Text: Hitachi Single-Chip Microcomputer H8/3217 Series H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 Hardware Manual 02/07/96 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.


    Original     		PDF H8/3217 H8/3217, H8/3216 H8/3214, H8/3212 H8/3202 DP-64S) FP-64A) TFP-80C) Hitachi DSA0057

    mitsubishi H96

    Abstract: HD6473214F16 HD6473217P16
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF DC-64S) DP-64S) FP-64A) TFP-80C) mitsubishi H96 HD6473214F16 HD6473217P16

    C6145A

    Abstract: 2SC6145A 2SA2223A High power audio transistor equivalent table 2SC6145 sanken lapt sanken power transistor SANKEN AUDIO Sanken Transistor Mt 200 multi emitter transistor
    Text: 2SC6145A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These NPN power transistors achieve


    Original     		PDF 2SC6145A C6145A 2SC6145A 2SA2223A High power audio transistor equivalent table 2SC6145 sanken lapt sanken power transistor SANKEN AUDIO Sanken Transistor Mt 200 multi emitter transistor

    2SC6145

    Abstract: 2sc4382a SANKEN AUDIO Sanken Transistor Mt 200 SANKEN 2SA2223 SC102 corn cob collector Pan Overseas G746
    Text: 2SC6145 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These NPN power transistors achieve


    Original     		PDF 2SC6145 2SC6145 2sc4382a SANKEN AUDIO Sanken Transistor Mt 200 SANKEN 2SA2223 SC102 corn cob collector Pan Overseas G746

    VON100

    Abstract: VOP100
    Text: HFA1120/883 S E M I C O N D U C T O R 850MHz Current Feedback Amplifier with Offset Adjust July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1120/883 is a high speed, wideband, fast settling


    Original     		PDF HFA1120/883 850MHz MIL-STD883 HFA1120/883 30MHz) -84dBc 850MHz VON100 VOP100

    SPDT FETs

    Abstract: SKY13317-373LF uhf microwave fet AS179-92LF ba20 transistor SKY13317-373 SKY13318-321LF SKY13286-359LF SKY13290-313LF SKY13298-360LF
    Text: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz Features • Low-insertion loss


    Original     		PDF BRO378-10B SPDT FETs SKY13317-373LF uhf microwave fet AS179-92LF ba20 transistor SKY13317-373 SKY13318-321LF SKY13286-359LF SKY13290-313LF SKY13298-360LF

    Untitled

    Abstract: No abstract text available
    Text: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna


    Original     		PDF BRO378-12B

    AD584

    Abstract: AD596 AD596AH AD597 AD597AH AD597AR ICL7136 1262 thermometer 6243 so-8
    Text: @ +60؇C and VS = 10 V, Type J (AD596 , Type K (AD597) Thermocouple, AD596/AD597–SPECIFICATIONS unless otherwise noted) Model AD596AH Typ Max Min ABSOLUTE MAXIMUM RATINGS +VS to –VS Common-Mode Input Voltage Differential Input Voltage Alarm Voltages +ALM


    Original     		PDF AD596) AD597) AD596/AD597 AD596AH UsablC831b AD584 AD596 AD596AH AD597 AD597AH AD597AR ICL7136 1262 thermometer 6243 so-8

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    2N4211

    Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
    Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629


    OCR Scan     		PDF f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 2N4211 TO63 2N3599 2N3772

    TO63

    Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
    Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629


    OCR Scan     		PDF f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 TO63 2N3599 2N3772

    transistor BD 522

    Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


    OCR Scan     		PDF BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810

    d 2539 transistor

    Abstract: AN541 HA1-2539
    Text: U U HA-2539 HARRIS S E M I C O N D U C T O R 600MHz, Very High Slew Rate Operational Amplifier N o ve m b e r 1996 Features D escription • Very High Slew R a te . 600V/ns • Open Loop


    OCR Scan     		PDF HA-2539 600MHz, d 2539 transistor AN541 HA1-2539

    2n4405

    Abstract: 2n4404 2N4404 MOTOROLA 2n4405 motorola
    Text: MOTOROLA SC XSTRS/R 1EE 0 I F L3b725«4 GüôbMia 'i | T-33-n 2N4404 2N4405 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage v CEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Rating Collector Current — Continuous


    OCR Scan     		PDF L3b725 2N4404 2N4405 T-33-n O-205AD) 2n4405 2N4404 MOTOROLA 2n4405 motorola

    Untitled

    Abstract: No abstract text available
    Text: NEC NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: f ï = 7 GHz The NE981 series of NPN silicon transistors is designed for microwave amplifiers up to 6 GHz and ultrahigh speed


    OCR Scan     		PDF NE98108 NE98141 NE981 NE98141 s-117

    Untitled

    Abstract: No abstract text available
    Text: HFA1120/883 Œ MASS'S 850MHz Current Feedback Amplifier with Offset Adjust jUiy1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1120/883 is a high speed, wideband, fast settling


    OCR Scan     		PDF HFA1120/883 850MHz MIL-STD883 HFA1120/883 -84dBc 850MHz 43G2271 483nm

    Untitled

    Abstract: No abstract text available
    Text: HFA 1120/883 & MAR , 850MHz Current Feedback Amplifier with Offset Adjust juiy 1994 Features Description • This Circuit Is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1120/883 is a high speed, wideband, fast settling


    OCR Scan     		PDF MIL-STD883 30MHz) -84dBc 850MHz 50MHz) HFA1120/883 HFA1120/883

    Untitled

    Abstract: No abstract text available
    Text: FSS9130D, FSS9130R FR HARRIS S E M I C O N D U C T O R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 6A, -100V, rQg oN = 0«660il The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS9130D, FSS9130R -100V, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    Untitled

    Abstract: No abstract text available
    Text: ~ Semiconductor, Inc. TC96C555 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ TheTC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power supplies, diode doublers and Inverters, and similar circuits where


    OCR Scan     		PDF TC96C555 1800pF 150ns TheTC96C555 TC96C555