TEMIC K153P
Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2
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WN1053
WN1087-18R
WN1087-TR1
WN1090
WN1125
WN1142
WN1158-TA
WN1165-TR1
WN1170
WN934
TEMIC K153P
TSHF5471
tfmw5380
dn1328
tdsr5156
dn904
TDSR5153
HS0038 IR sensor
TLVD4900
TCDF1910
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transistor 313 smd
Abstract: BUK9515-100A BUK9615-100A SC18
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9515-100A BUK9615-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using
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BUK9515-100A
BUK9615-100A
O220AB
OT404
O220AB
transistor 313 smd
BUK9515-100A
BUK9615-100A
SC18
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transistor 313 sot23
Abstract: npn 313 sot-23 DARLINGTON SOT-23 darlington sot23 pnp SOT 363 darlington
Text: Type Number Collector to Emitter Voltage DC Current Gain Saturation Voltage, Collector to Emitter Gain Bandwidth Product VCEO hFE @ VCEO / IC VCE SAT @ IC / IB fT @ VCE / IC V Min-Max V / mA Max. V mA / mA MHZ V / mA PNP Transistors / SOT-23 MMBT2907A MMBT3906
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OT-23
MMBT2907A
MMBT3906
MMBT4403
MMBTA55
MMBTA56
MMBTA92
MMBT4126
MMBT5401
100min
transistor 313 sot23
npn 313 sot-23
DARLINGTON SOT-23
darlington sot23 pnp
SOT 363 darlington
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2SB766A
Abstract: RN5RF30A RN5RF50A
Text: LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-0204 515 6 5,(6 OUTLINE 7KH 515) 6HULHV DUH &026EDVHG YROWDJH UHJXODWRU ,&V ZKLFK FRQWURO H[WHUQDO GULYHU WUDQVLVWRUV ZLWK KLJK ULS SOH UHMHFWLRQ KLJK DFFXUDF\ RXWSXW YROWDJH ORZ VXSSO\ FXUUHQW (DFK RI WKHVH YROWDJH UHJXODWRU ,&V FRQVLVWV RI D YROW
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EA-043-0204
026EDVHG
RN5RF30A
2SB766A
2SB766A
RN5RF30A
RN5RF50A
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4139 temperature
Abstract: RN5RF RN5RF30A RN5RF50A 75W PNP
Text: /2:#5,33/ #92/7$*( 5(*8/$725#:,7+#(;7(51$/ 75$16,6725 5185 #6(5,(6 $33/,&$7,21#0$18$/ NO. EA-043-0006 LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR 5185)#6(5,(6 OUTLINE /
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EA-043-0006
RN5RF30A
4139 temperature
RN5RF
RN5RF30A
RN5RF50A
75W PNP
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Untitled
Abstract: No abstract text available
Text: RN 5 RF SERI ES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of
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EA-043-111116
Room403,
Room109,
10F-1,
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Untitled
Abstract: No abstract text available
Text: RN5RF SERIES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of
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EA-043-111116
Room403,
Room109,
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BC847BS
Abstract: NXP SMD TRANSISTOR MARKING CODE BC847BS nxp TRANSISTOR SMD CODE PACKAGE SOT363 pnp transistor 313 smd TRANSISTOR SMD MARKING CODES BC857BS transistor smd code marking 102 transistor SMD MARKING CODE SMD TRANSISTOR MARKING 1F
Text: BC847BS 45 V, 100 mA NPN/NPN general-purpose transistor Rev. 03 — 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package.
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BC847BS
OT363
SC-88)
BC857BS.
BC847BS
NXP SMD TRANSISTOR MARKING CODE
BC847BS nxp
TRANSISTOR SMD CODE PACKAGE SOT363
pnp transistor 313 smd
TRANSISTOR SMD MARKING CODES
BC857BS
transistor smd code marking 102
transistor SMD MARKING CODE
SMD TRANSISTOR MARKING 1F
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Untitled
Abstract: No abstract text available
Text: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband
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BFG195
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11105 IC
Abstract: npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5
Text: BFS17 NPN Silicon planar RF transistor BFS 17 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , for use in film circuits up into the GHz range. The transistor marked: MA 1±M5 1-0.05 r* * ? * * • ; T ype Code
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BFS17
OT-23)
Q62702-F337
11105 IC
npn transistor w5
BFS17
ic 11105 circuits voltage
Transistor code 1z
bfs17 mark
SOT23 code fj
transistor 313 sot23
transistor x 313
RF TRANSISTOR SOT23 5
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Untitled
Abstract: No abstract text available
Text: Philip« Semiconductors 711Dô2b G 0 b û 4 0 cl 3 T a • PH IN PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and
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BC807W;
BC808W
OT323
BC807W:
BC807-16W
BC807-25W
BC807W
BC807-40W
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and amplification. PINNING - SOT323
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BC807W;
BC808W
OT323
BC807-25W
BC807W
BC807-40W
BC807-16W
BC807W:
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transistor Common Base amplifier
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZB16035U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT443A
PZB16035U
transistor Common Base amplifier
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES PINNING - TO-92 SOT54 variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g • No secondary breakdown.
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1997Jun
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Transistor marking S
Abstract: BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W BC808W
Text: bhSa^l P hilip s Sem iconductors 002M443 STT IAPX Product specification PNP general purpose transistor BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES b?E PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323
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LhS3T31
002M443
BC807W;
BC808W
OT323
OT323
MAM037
BC807W:
BC807-16W
BC807-25W
Transistor marking S
BC807-40W
BC807W
BC808-16W
BC808-25W
BC808-40W
BC808W
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BU826
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53^31 DG5fi31M Mfl? I IAPX b=IE D BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circu it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast switching application.
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DG5fi31M
BU826
BU826A
7Z88075
BU826
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TRANSISTOR a32
Abstract: g3ki A32 SOT23
Text: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCE0 = 40 V (min) at lc = 1.0 mA 1, 9 ± 0 ,2 10 .9 5 0 .9 5 f T excellent gain linearity from lOOjiAto
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OT-23)
SST6839
BC857B
BC858B
TRANSISTOR a32
g3ki
A32 SOT23
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Untitled
Abstract: No abstract text available
Text: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCEO = 40 V (min) at lc = 1.0 mA 0 .4 5 ± 0 .1 excellent gain linearity from 100 (iA to
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OT-23)
SST6839
BC857B
BC858B
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W1p TRANSISTOR
Abstract: transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50
Text: Philips Sem iconductors 1^53131 0025366 774 M A P X AMER P H I L I P S / D I S C R E T E Product specification b?E PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily Intended for use in RF
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BFT92
BFR92
BFR92A.
W1p TRANSISTOR
transistor w1P
w1p npn
SOT23 W1P
W1P 59 transistor
w1p 60
W1P 51
W1p 69
W1P 66 transistor
W1P 50
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • W = 1'2 - 2-0 V Type BSP 318 Vbs 60 V Type BSP 318 Ordering Code Q67000-S127 b 2.6 A ñ DS on) 0.15 Ci Package Marking SOT-223 BSP 318
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Q67000-S127
OT-223
E6327
fi23SbQS
a23SbQS
fl235b05
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TRANSISTOR 318
Abstract: BSP 312 BSP318 MU diode MARKING CODE
Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223
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OT-223
Q67000-S127
E6327
OT-223
TRANSISTOR 318
BSP 312
BSP318
MU diode MARKING CODE
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BU826A
Abstract: BU826 BD227 FL01 5A/M39029/BU826A
Text: N AMER PHILIPS/DISCRETE b TE D • bb53T31 0020314 4fl7 H A P X BU826 BU826A , SILICON DARLINGTON POWER TRANSISTOR M o n o lith ic high voltage npn D arlin g to n c irc u it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast sw itching ap p lica tio n.
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bb53T31
BU826
BU826A
BU826
7Z88187
BU826A
BD227
FL01
5A/M39029/BU826A
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BFQ23C
Abstract: BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173
Text: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features
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BFP91A
711002b
00453bb
OT173
OT173X
BFQ23C.
OT173.
D-160
BFQ23C
BFP91A
t-31-21
537D
UBB843
BFP91A NPN PHILIPS
SOT173
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Transistor SSI 5504 175
Abstract: transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663
Text: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features
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BFP91A
711002b
G0453bb
OT173
BFQ23C.
OT173.
Transistor SSI 5504 175
transistor b 1238
SSI 5504 175
0507 transistor
0235S2
BFP91A
transistor d 1663
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