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    TRANSISTOR 313 SMD Search Results

    TRANSISTOR 313 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 313 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4P04L11

    Abstract: IPD50P04P4L-11
    Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mΩ ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P04P4L-11 PG-TO252-3-313 4P04L11 -10V1) -10V2) 4P04L11 IPD50P04P4L-11

    4P04L11

    Abstract: INFINEON marking
    Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P04P4L-11 PG-TO252-3-313 PG-TO252-3-313 4P04L11 -10V1) -10V2) 4P04L11 INFINEON marking

    4P04L11

    Abstract: PG-TO252-3-313 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50
    Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P04P4L-11 PG-TO252-3-313 PG-TO252-3-313 4P04L11 -10V1) -10V2) 726-IPD50P04P4L-11 4P04L11 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50

    Untitled

    Abstract: No abstract text available
    Text: IPD5N25S3-430 OptiMOS -T Power-Transistor Product Summary V DS 250 V R DS on ,max 430 mW ID 5 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD5N25S3-430 PG-TO252-3-313 PG-TO252-3- 3N25430

    4P0413

    Abstract: 2101-7R 4-P-04 IPD50P04P4-13 IPD50p04 IPD50P04P4 IPD50P04P413
    Text: IPD50P04P4-13 Type OptiMOS -P2 Power-Transistor Product Summary Package V DS -40 V R DS on 12.6 mW ID -50 A Marking Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P04P4-13 PG-TO252-3-313 4P0413 -10V2) 4P0413 2101-7R 4-P-04 IPD50P04P4-13 IPD50p04 IPD50P04P4 IPD50P04P413

    4-P-04

    Abstract: No abstract text available
    Text: IPD85P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 6.4 mW ID -85 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPD85P04P4L-06 PG-TO252-3-313 4P04L06 -10V2) 4-P-04

    4N0402

    Abstract: a3180 c9025 IPD90N04S4-02 TH-43
    Text: IPD90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.4 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD90N04S4-02 PG-TO252-3-313 4N0402 4N0402 a3180 c9025 IPD90N04S4-02 TH-43

    4N0405

    Abstract: No abstract text available
    Text: IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.2 mΩ ID 86 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD90N04S4-05 PG-TO252-3-313 4N0405 4N0405

    4N0403

    Abstract: IPD90N04S4-03 65V-5 IPD90N04S4
    Text: IPD90N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 3.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD90N04S4-03 PG-TO252-3-313 4N0403 4N0403 IPD90N04S4-03 65V-5 IPD90N04S4

    4N0405

    Abstract: IPD90N04S4-05 smd diode 86A IPD90N04S4 F86A PG-TO252-3-313
    Text: IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.2 mΩ ID 86 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD90N04S4-05 PG-TO252-3-313 4N0405 4N0405 IPD90N04S4-05 smd diode 86A IPD90N04S4 F86A PG-TO252-3-313

    4N04L04

    Abstract: IPD90N04S4L-04 PG-TO25 IPD90N04S4 IPD90N04S4L PG-TO252-3-313
    Text: IPD90N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 3.8 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD90N04S4L-04 PG-TO252-3-313 4N04L04 4N04L04 IPD90N04S4L-04 PG-TO25 IPD90N04S4 IPD90N04S4L PG-TO252-3-313

    IPD70P04P4L-08

    Abstract: a1409
    Text: IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.8 mW ID -70 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPD70P04P4L-08 PG-TO252-3-313 4P04L08 -10V1) IPD70P04P4L-08 a1409

    IPD90P04P4-05

    Abstract: 4P0405 IPD90P04P4 IPD90P04 IPD90P04P405
    Text: IPD90P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 4.7 mΩ ID -90 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPD90P04P4-05 PG-TO252-3-313 4P0405 -10V2) IPD90P04P4-05 4P0405 IPD90P04P4 IPD90P04 IPD90P04P405

    IPD100N04S4-02

    Abstract: 4N0402 DSS 1630 marking 206a 175C D441000 ipd100n
    Text: IPD100N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD100N04S4-02 PG-TO252-3-313 4N0402 IPD100N04S4-02 4N0402 DSS 1630 marking 206a 175C D441000 ipd100n

    4P0409

    Abstract: IPD70P04P4-09 IPD70P04P4
    Text: IPD70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 8.9 mΩ ID -73 A Features PG-TO252-3-313 • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPD70P04P4-09 PG-TO252-3-313 4P0409 -10V1) 4P0409 IPD70P04P4-09 IPD70P04P4

    Untitled

    Abstract: No abstract text available
    Text: IPD90N10S4L-06 OptiMOSTM-T2 Power-Transistor Product Summary V DS 100 V R DS on ,max 6.6 mW ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified TAB • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 3 • Green Product (RoHS compliant)


    Original     		PDF IPD90N10S4L-06 PG-TO252-3-313 4N10L06

    4P0407

    Abstract: IPD85P04P407
    Text: IPD85P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.3 mW ID -85 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPD85P04P4-07 PG-TO252-3-313 4P0407 -10V2) 4P0407 IPD85P04P407

    IPD75N04S4-06

    Abstract: 4N0406 PG-TO252-3-313 17A44 d75a 4N04 ipd75n
    Text: IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.9 mΩ ID 75 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD75N04S4-06 PG-TO252-3-313 4N0406 726-IPD75N04S4-06 IPD75N04S4-06 4N0406 PG-TO252-3-313 17A44 d75a 4N04 ipd75n

    IPD50N04S4L-08

    Abstract: 4N04L08 IPD50N04S4-08 PG-TO252-3-313 ANPS071E 8025A
    Text: IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD50N04S4L-08 PG-TO252-3-313 IPD50N04S4-08 4N04L08 IPD50N04S4L-08 4N04L08 IPD50N04S4-08 PG-TO252-3-313 ANPS071E 8025A

    4N0410

    Abstract: IPD50N04S4-10
    Text: IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 9.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD50N04S4-10 PG-TO252-3-313 4N0410 4N0410 IPD50N04S4-10

    Untitled

    Abstract: No abstract text available
    Text: IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.8 mW ID -70 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPD70P04P4L-08 PG-TO252-3-313 4P04L08 -10V1)

    IPD50N04S4-08

    Abstract: 4N0408
    Text: IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.9 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD50N04S4-08 PG-TO252-3-313 4N0408 IPD50N04S4-08 4N0408

    4N0406

    Abstract: 59-MID IPD75N04S4-06 PG-TO252-3-313 gs 32
    Text: IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.9 mΩ ID 75 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD75N04S4-06 PG-TO252-3-313 4N0406 4N0406 59-MID IPD75N04S4-06 PG-TO252-3-313 gs 32

    4P04L04

    Abstract: IPD90P04P4L04
    Text: IPD90P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 4.3 mW ID -90 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		PDF IPD90P04P4L-04 PG-TO252-3-313 4P04L04 -10V2) 4P04L04 IPD90P04P4L04