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    TRANSISTOR 2SK2605 Search Results

    TRANSISTOR 2SK2605 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SK2605 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		PDF 2SK2605 k2605 K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605

    2SK2605

    Abstract: 2sK2605 TRANSISTOR
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		PDF 2SK2605 2SK2605 2sK2605 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		PDF 2SK2605

    K2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		PDF 2SK2605 45oducts K2605 K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR

    2SK2605

    Abstract: 2sK2605 TRANSISTOR
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.8 S (typ.) l Low leakage current


    Original     		PDF 2SK2605 2SK2605 2sK2605 TRANSISTOR

    K2605

    Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		PDF 2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : |Yfs| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current


    Original     		PDF 2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    K2543

    Abstract: MOSFET TOSHIBA 2SK MOSFET VDS 220V TO-220 equivalent 2sk2698 mosfet 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
    Text: Avalanche Withstand Capability PRODUCT GUIDE Avalanche Withstand Capability Avalanc Power MOSFETs are used as high-speed switching devices in applications such as switching power supplies and DC-DC converters, where they contribute to miniaturization and lighter weight. The higher the operating frequency,


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


    Original     		PDF SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52

    ss100 transistor

    Abstract: 2SK2605 transistor ss100 2sK2605 TRANSISTOR
    Text: TOSHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : Rd s 0N “ 1*90 (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.)


    OCR Scan     		PDF 2SK2605 SS-100/ ss100 transistor 2SK2605 transistor ss100 2sK2605 TRANSISTOR

    transistor 2sk2605

    Abstract: 2sk2605 j3d marking
    Text: T O SH IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rßg (ON)= 1-9^ (Typ.) tt: j.x ig_ln tti_


    OCR Scan     		PDF 2SK2605 s100//s J--25 --90V, --27mH transistor 2sk2605 2sk2605 j3d marking

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 0 ± 0.3 • • • • ^ 3.2 ± 0.2 2 .7 1 0 .2


    OCR Scan     		PDF 2SK2605

    2SK2605

    Abstract: Diode FAJ 45 2sK2605 TRANSISTOR Diode FAJ 22
    Text: T O S H IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR APPLICATIONS 10 ± 0.3 03.2 ± 0.2 . 2.7± 0.2 J •


    OCR Scan     		PDF 2SK2605 2SK2605 Diode FAJ 45 2sK2605 TRANSISTOR Diode FAJ 22

    ss100 transistor

    Abstract: 2SK2605
    Text: T O S H IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Soree ON Resistance : Typ. High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : I d SS“ 100/^A (Max.) (Vj)g = 640V)


    OCR Scan     		PDF 2SK2605 SS-100/ ss100 transistor 2SK2605

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2605 T O SH IB A FIELD EFFECT TRANSISTO R SILICON N C H A N N E L M O S TYPE tt-M O S III 2SK2605 HIGH SPEED, HIGH VO LTAGE SW ITCH IN G APPLICATIO NS INDUSTRIAL APPLICATIONS Unit in mm SW ITCH IN G REGULATOR APPLICATIO NS • Low Drain-Sorce ON Resistance


    OCR Scan     		PDF 2SK2605