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    TRANSISTOR 2SC732 Search Results

    TRANSISTOR 2SC732 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC732 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2sC732

    Abstract: 2SC732
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC732 100Hz, transistor 2sC732 2SC732

    2SC732

    Abstract: transistor 2sC732 NPN 2sc732 2SC732 Transistor 2SC732 equivalent 2SC732 s
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC732 100Hz, 2SC732 transistor 2sC732 NPN 2sc732 2SC732 Transistor 2SC732 equivalent 2SC732 s

    transistor 2sC732

    Abstract: 2sc732 hFE-200 to-92 npn NPN 2sc732
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC732 100Hz, transistor 2sC732 2sc732 hFE-200 to-92 npn NPN 2sc732

    2SC732

    Abstract: transistor 2sC732 NPN 2sc732
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC732 100Hz, 2SC732 transistor 2sC732 NPN 2sc732

    2SC5471

    Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
    Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN


    Original     		PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor

    toshiba 2SC732

    Abstract: 2SC732TM
    Text: 2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 (Typ.) Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz)


    Original     		PDF 2SC732TM 100Hz) 100Hz, toshiba 2SC732 2SC732TM

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    equivalent of transistor 8050

    Abstract: 2SC734 equivalent Equivalent to transistor 2sc945 transistor 2SC710 transistor BC 337 transistor 2SC711 bc 8050 8050 equivalent 2sc828 equivalent 2SC711
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC621 HN / BC 548 / 9014 2SC754 HN / BC 548 / 9014 2SC950 HN / BC 548 / 9014 2SC622 HN / BC 548 / 9014


    Original     		PDF To-92 2SC621 2SC754 2SC950 2SC622 2SC755 2SC951 2SC631 2SC814 2SC953 equivalent of transistor 8050 2SC734 equivalent Equivalent to transistor 2sc945 transistor 2SC710 transistor BC 337 transistor 2SC711 bc 8050 8050 equivalent 2sc828 equivalent 2SC711

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    2SC732TM

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • Unit in mm High Breakdomn Voltage : V£EO = 50V Excellent hpg Linearity : hpE (IC = 0-l rn^L) 1hpE dC = 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SC732TM 2SC732TM) 100Hz) 2SC732TM

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR SEM ICONDUCTOR T O SH IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • High Breakdomn Voltage : V q e O ~ 50V • Excellent hpE Linearity : hFE dC = 0.1mA) / hFE (Iq = 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SC732TM 2SC732TM) 100Hz) 2SC732TM

    2SC732TM

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR SEMICONDUCTOR TO SH IB A TECHNICAL 2SC732TM SILICON NPN EPITAXIAL TYPE PCT PROCESS DATA (2SC732TM) Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS • High Breakdomn Voltage : • Excellent hEE Linearity V q E o = 50V . 5.1 M AX. : hFE (Ie = 0.1mA) / hFE (Ie = 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SC732TM 2sc732tm) 100Hz) 2SC732TM

    2SC732TM

    Abstract: M5030 S12R
    Text: TOSHIBA TRANSISTOR SEMICONDUCTOR T O S H IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) Unit in mm LOW NOISE A U D IO AM PLIFIER APPLICATIO NS • • • High Breakdomn Voltage : V q e O = 50V Excellent hpg Linearity : hFE (Ic = 0.1mA) / hFE (Iq = 2mA) = 0.95 (Typ.)


    OCR Scan     		PDF 2SC732TM 2SC732TM) 100Hz) 7500O M5030 S12R

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TO-92 1. TO-92 PACKAGE SERIES fsSTM ito |CJ i CD {DISCRETE/0PT0> 'N TO o > TRANSISTOR < Application NPN General Purpose 2SC1815 ! PNP i i 2SA1015 General Purpose 2SC2888 ! 2SA1158 V c e Sat MAX. hFE Type No. v CEO (V) •c PC (mA) (mW) 50 150 400


    OCR Scan     		PDF 2SC1815 2SC2888 2SA1158 2SA1015 2SC1923 2SC380TM 2SC941TM 50vMAX

    2sc286

    Abstract: 2SC1815 2SA1015 2SC2754 2SA1015 2SA970 2SA1316 2SA1015 GR 2SA1164 2SC1815 2SC2240
    Text: Powered .TOSHIBA by TO-92 ÌSSTM \ 0 |0 iCO N ro ui o Electronic-Library > TRANSISTOR < V c e (Sat M AX. hFE 'C PC (V) (mA) (mW) (mA) General Purpose 2SC1815 ! 2SA1015 50 150 400 70~700/400 6 2 0.25/0.3 100 10 (80) 10 1 10 6 0.1 1K 10 General Purpose . i .


    OCR Scan     		PDF 50vMAX 2SC1815 2SA1015 2SC2868 2SA1158 2SC1627 2SA817 2SC2754 2SA1164 2SC2878* 2sc286 2SC1815 2SA1015 2SA970 2SA1316 2SA1015 GR 2SC2240

    2SC732

    Abstract: transistor 2sC732 2SC732GR 2SC373 2SC732BL 2SC732-GR NPN 2sc732 2SC732-BL transistor 2sc373 2SC373 GR
    Text: 2 /U D > N P N I t :^ ^ U ^ S 5 > ^ 7 .5 ? P C T B ^ 2 s c 732 ^ IL IC O N NPN EPITAXIAL TRANSISTOR (PCT PROCESS) O Low N o is e A m p lif ie r A p p lic a t io n s • U t i f t i ' / J ' S l ' : NF = 5 d B • (Typ.) ( f = 120Hz ) : hFE = 2 0 0 - 7 0 0


    OCR Scan     		PDF 2sc732 120Hz 2SC732 transistor 2sC732 2SC732GR 2SC373 2SC732BL 2SC732-GR NPN 2sc732 2SC732-BL transistor 2sc373 2SC373 GR

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp