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    TRANSISTOR 2SC5388 Search Results

    TRANSISTOR 2SC5388 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    2SC5388

    Abstract: 2SC5388 equivalent 2sc-5388 2sc5388 TRANSISTOR transistor 2SC5388 TA-1738 d 6283 ic ENN6283 6283 ic 62832
    Text: Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features Package Dimensions • High speed Adoption of MBIT process . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN6283 2SC5388 2039D 2SC5388] 2SC5388 2SC5388 equivalent 2sc-5388 2sc5388 TRANSISTOR transistor 2SC5388 TA-1738 d 6283 ic ENN6283 6283 ic 62832